IXFP180N10T2 Equivalent & Substitute Parts

Part Overview

The IXFP180N10T2 is an N-Channel MOSFET manufactured by IXYS, rated for 100V drain-to-source voltage and 180A continuous drain current at 25°C. This device belongs to the HiPerFET™ and TrenchT2™ series and is housed in a TO-220-3 through-hole package. The part is currently in active production status with 2062 units in stock.

Equivalent and substitute parts are identified when applications require alternative sourcing due to component availability, supply chain considerations, or when design specifications permit operation within the electrical and mechanical parameters of alternative devices. The substitute parts listed below share compatible electrical characteristics and identical packaging, enabling direct replacement in appropriate circuit configurations.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	180	A (Tc)
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	6	mOhm @ 50A, 10V
Gate Threshold Voltage Vgs(th) (Max) @ Id	4	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	185	nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	10500	pF @ 25V
Power Dissipation (Max)	480	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-220-3	Through Hole
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts for the IXFP180N10T2 are selected based on the following criteria:

Primary Substitution Parameters:

Drain to Source Voltage (Vdss): 100V or higher
Package Type: TO-220-3 or TO-220-compatible through-hole configuration
FET Type: N-Channel MOSFET
Technology: Metal Oxide Semiconductor (MOSFET)
Operating Temperature Range: -55°C to 175°C or equivalent
Compliance: ROHS3 Compliant, REACH Unaffected

Secondary Compatibility Factors:

Continuous Drain Current (Id): Devices rated at 80A or higher are compatible for applications not requiring the full 180A capability
Gate Threshold Voltage (Vgs(th)): Range of 3.2V to 4.5V ensures compatible gate drive requirements
Maximum Gate Voltage (Vgs): ±20V across all candidates
Rds On characteristics: Devices with Rds On values between 6mOhm and 8mOhm at 10V gate drive are functionally equivalent

Substitutes are grouped into two categories: direct current-rated alternatives (100A+) and reduced current alternatives (80A–110A) suitable for applications with lower current demands.

Parameter Comparison

Parameter	IXFP180N10T2	CSD19501KCS	CSD19531KCS	IRFB4310PBF	IRFB4310ZPBF	STP100N10F7	STP110N10F7
Manufacturer	IXYS	Texas Instruments	Texas Instruments	Infineon Technologies	Infineon Technologies	STMicroelectronics	STMicroelectronics
Vdss (V)	100	80	100	100	100	100	100
Id @ 25°C (A)	180 (Tc)	100 (Ta)	100 (Ta)	130 (Tc)	120 (Tc)	80 (Tc)	110 (Tc)
Drive Voltage (V)	10	6, 10	6, 10	10	10	10	10
Rds On (Max) @ 10V (mOhm)	6 @ 50A	6.6 @ 60A	7.7 @ 60A	7 @ 75A	6 @ 75A	8 @ 40A	7 @ 55A
Vgs(th) (Max) @ Id (V)	4 @ 250µA	3.2 @ 250µA	3.3 @ 250µA	4 @ 250µA	4 @ 150µA	4.5 @ 250µA	4 @ 250µA
Gate Charge Qg (Max) @ 10V (nC)	185	50	38	250	170	61	60
Ciss (Max) @ Vds (pF)	10500 @ 25V	3980 @ 40V	3870 @ 50V	7670 @ 50V	6860 @ 50V	4369 @ 50V	5500 @ 50V
Power Dissipation (Max) (W)	480 (Tc)	217 (Tc)	214 (Tc)	300 (Tc)	250 (Tc)	150 (Tc)	150 (Tc)
Operating Temperature (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	TO-220-3	TO-220-3	TO-220-3	TO-220AB	TO-220AB	TO-220	TO-220
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Product Status	Active	Active	Active	Active	Active	Active	Active

Engineering Selection Recommendations

All substitute parts listed are active production devices with ROHS3 compliance and REACH unaffected status, meeting the same regulatory requirements as the IXFP180N10T2.

For applications requiring maximum current handling (180A): The IXFP180N10T2 remains the only device in this comparison set rated for 180A continuous drain current. No direct current-equivalent substitute exists among the listed alternatives.

For applications tolerating reduced current capacity (100A–130A): The IRFB4310PBF (130A, Infineon HEXFET®) and IRFB4310ZPBF (120A, Infineon HEXFET®) provide the closest electrical performance with 100V Vdss rating and comparable Rds On characteristics. Both devices maintain identical operating temperature range and compliance certifications.

For applications with current requirements below 110A: The CSD19531KCS (100A, Texas Instruments NexFET™) offers 100V Vdss with lower gate charge (38nC) and reduced input capacitance, beneficial for high-frequency switching applications. The STP110N10F7 (110A, STMicroelectronics STripFET™ VII) provides similar current capability with comparable Rds On performance.

For applications with voltage constraints at 80V or lower: The CSD19501KCS (80V, 100A, Texas Instruments NexFET™) is suitable only when circuit design permits operation below 100V.

All substitute parts share identical TO-220 package family compatibility, enabling mechanical interchangeability in standard through-hole PCB layouts.

Frequently Asked Questions (FAQ)

Q: Can the CSD19531KCS directly replace the IXFP180N10T2 in all applications?

A: The CSD19531KCS shares the same 100V Vdss rating and TO-220-3 package, but is rated for 100A continuous drain current versus the IXFP180N10T2's 180A. Direct replacement is limited to applications where the circuit current demand does not exceed 100A. Gate charge and input capacitance differ significantly, which may affect switching frequency performance.

Q: What is the primary difference between the IRFB4310PBF and IRFB4310ZPBF?

A: Both devices are Infineon HEXFET® MOSFETs with 100V Vdss and TO-220AB packaging. The IRFB4310PBF is rated for 130A continuous drain current with 300W power dissipation, while the IRFB4310ZPBF is rated for 120A with 250W power dissipation. Gate charge differs (250nC versus 170nC at 10V), affecting switching characteristics.

Q: Are the STMicroelectronics STP100N10F7 and STP110N10F7 interchangeable?

A: Both devices are STripFET™ VII series MOSFETs with 100V Vdss and TO-220 packaging. The STP100N10F7 is rated for 80A and the STP110N10F7 for 110A continuous drain current. They share identical power dissipation (150W) and similar Rds On characteristics. Selection depends on circuit current requirements.

Q: Why does the CSD19501KCS have a lower Vdss rating (80V) than other substitutes?

A: The CSD19501KCS is rated for 80V Vdss, which is 20V lower than the IXFP180N10T2's 100V rating. This device is suitable only for applications where the maximum drain-to-source voltage does not exceed 80V. Using this device in circuits designed for 100V operation creates risk of device failure.

Q: What does the TO-220AB package designation indicate compared to TO-220-3?

A: TO-220AB and TO-220-3 refer to the same three-lead through-hole package family with identical pin configuration and mechanical dimensions. The designations are manufacturer-specific nomenclature. All listed devices are mechanically compatible in standard TO-220 PCB footprints.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The IXFP180N10T2 has 185nC gate charge, while substitutes range from 38nC to 250nC. Lower gate charge enables faster switching and reduced driver power dissipation. Higher gate charge requires more driver current but may provide improved noise immunity. Selection depends on gate driver capability and switching frequency requirements.

Q: Are all listed substitutes suitable for high-frequency switching applications?

A: High-frequency performance depends on gate charge, input capacitance, and switching losses. The Texas Instruments NexFET™ devices (CSD19501KCS, CSD19531KCS) feature significantly lower gate charge (38–50nC) and input capacitance (3870–3980pF), making them suitable for frequencies above 100kHz. The IXFP180N10T2 and Infineon HEXFET® devices have higher gate charge and capacitance, limiting high-frequency applications.

Q: Can substitutes be used in parallel with the IXFP180N10T2 to achieve higher current capacity?

A: Parallel operation of different MOSFET models is not recommended due to differences in Rds On characteristics, gate threshold voltage, and thermal behavior. Current distribution becomes unequal, leading to uneven power dissipation and potential device failure. Parallel operation requires identical device models with matched electrical parameters.

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