IXFP14N60P N-Channel 600V 14A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFP14N60P is an N-Channel 600V 14A MOSFET manufactured by IXYS in the HiPerFET™ series, housed in a TO-220-3 through-hole package. This device is rated for 300W maximum power dissipation and operates across a temperature range of -55°C to 150°C. The part maintains Active product status with full RoHS3 compliance and unlimited moisture sensitivity rating.

Equivalent and substitute parts are identified based on matching or compatible electrical characteristics including drain-source voltage (Vdss), continuous drain current (Id), on-state resistance (Rds On), gate charge (Qg), and thermal specifications. Substitution becomes necessary when the primary part is unavailable, when alternative packaging is required for mechanical integration, or when design flexibility permits operation within the specified parameter ranges of alternative devices.

Substiute Parts

IXFP14N60P
IXYSIn Stock: 15363IXFP14N60P Datasheet
IXFP14N60P
Current Part
IXFH14N60P
IXYSIn Stock: 1090IXFH14N60P Datasheet
IXFH14N60P
Parametric Equivalent
STP10N60M2
STMicroelectronicsIn Stock: 1342STP10N60M2 Datasheet
STP10N60M2
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STP10NM60N
STMicroelectronicsIn Stock: 18850STP10NM60N Datasheet
STP10NM60N
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STP10NM60ND
STMicroelectronicsIn Stock: 1309STP10NM60ND Datasheet
STP10NM60ND
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STP13NK60Z
STMicroelectronicsIn Stock: 1788STP13NK60Z Datasheet
STP13NK60Z
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Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 600 V
Continuous Drain Current (Id) @ 25°C 14 A (Tc)
On-State Resistance (Rds On) @ 7A, 10V 550 mOhm
Gate Threshold Voltage (Vgs(th)) @ 2.5mA 5.5 V
Gate Charge (Qg) @ 10V 36 nC
Maximum Gate Voltage (Vgs) ±30 V
Input Capacitance (Ciss) @ 25V 2500 pF
Power Dissipation (Max) 300 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Package Type TO-220-3 Through Hole

Substitute Part Grouping Explanation

Substitution of the IXFP14N60P is determined by the following critical electrical parameters:

Primary Substitution Criteria:

  • Drain-Source Voltage (Vdss): Must equal or exceed 600V
  • Continuous Drain Current (Id): Must support 14A or higher at 25°C
  • On-State Resistance (Rds On): Must not exceed 550mOhm at specified gate voltage
  • Gate Charge (Qg): Lower values indicate faster switching; values up to 36nC are acceptable
  • Power Dissipation: Must support minimum 300W thermal rating
  • Operating Temperature: Must span -55°C to 150°C
  • Package Compatibility: TO-220-3 or TO-247-3 through-hole packages

Parametric Equivalent: The IXFH14N60P maintains identical electrical specifications but differs in package form (TO-247AD), enabling direct functional substitution with mechanical re-layout.

Similar Alternatives: The STMicroelectronics STP13NK60Z, STP10NM60N, STP10NM60ND, and STP10N60M2 devices share the 600V Vdss rating and TO-220-3 packaging but operate at reduced current ratings (7.5A to 13A) and lower power dissipation (70W to 150W). These parts are suitable only when application current requirements do not exceed their rated continuous drain current.

Parameter Comparison

Parameter IXFP14N60P IXFH14N60P STP13NK60Z STP10NM60N STP10NM60ND STP10N60M2
Manufacturer IXYS IXYS STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Vdss (V) 600 600 600 600 600 600
Id @ 25°C (A) 14 14 13 10 8 7.5
Rds On @ 10V (mOhm) 550 @ 7A 550 @ 7A 550 @ 4.5A 550 @ 4A 600 @ 4A 600 @ 3A
Qg @ 10V (nC) 36 36 92 19 20 13.5
Vgs(th) (V) 5.5 @ 2.5mA 5.5 @ 2.5mA 4.5 @ 100µA 4 @ 250µA 5 @ 250µA 4 @ 250µA
Ciss @ Vds (pF) 2500 @ 25V 2500 @ 25V 2030 @ 25V 540 @ 50V 577 @ 50V 400 @ 100V
Power Dissipation (W) 300 300 150 70 70 85
Operating Temp (°C) -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150
Package TO-220-3 TO-247-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Product Status Active Active Active Active Obsolete Active
RoHS3 Compliance Yes Yes Yes Yes Yes Yes

Engineering Selection Recommendations

Direct Parametric Equivalent: The IXFH14N60P is the primary equivalent for the IXFP14N60P. Both devices share identical electrical specifications (600V, 14A, 550mOhm Rds On, 36nC gate charge, 300W power dissipation) and maintain Active product status with full RoHS3 compliance. The sole difference is packaging: IXFH14N60P uses TO-247-3 instead of TO-220-3. Selection between these two depends on PCB layout requirements and thermal management strategy. The TO-247 package provides superior thermal performance through increased lead surface area.

Active Alternatives with Reduced Current Rating: The STP13NK60Z (13A, 150W) and STP10NM60N (10A, 70W) are Active products suitable for applications where continuous drain current requirements do not exceed their rated specifications. Both maintain 600V Vdss, TO-220-3 packaging, and full compliance certifications. The STP13NK60Z provides the closest current match to the IXFP14N60P with acceptable power dissipation for moderate thermal loads.

Obsolete Part Avoidance: The STP10NM60ND carries Obsolete product status and should not be selected for new designs despite technical compatibility. This part is listed only for reference in legacy system maintenance scenarios.

Lower Current Alternatives: The STP10N60M2 (7.5A, 85W) and STP10NM60ND (8A, 70W) operate at significantly reduced current and power ratings. These parts are suitable only when application requirements fall within their specifications and represent cost-reduction alternatives rather than direct substitutes.

Frequently Asked Questions (FAQ)

Q: Can the IXFH14N60P directly replace the IXFP14N60P in existing designs?

A: The IXFH14N60P provides identical electrical performance and can replace the IXFP14N60P functionally. However, the TO-247-3 package differs physically from TO-220-3. PCB layout modifications are required, including different lead spacing and mounting hole positions. Thermal management may improve due to the TO-247 package's larger surface area.

Q: What is the minimum current rating acceptable for a substitute part?

A: A substitute part must support the maximum continuous drain current required by the application. The IXFP14N60P is rated for 14A continuous drain current. Substitute parts with lower Id ratings (such as STP10NM60N at 10A) can only be used if the application's actual current demand does not exceed the substitute's rating.

Q: Why do the STMicroelectronics alternatives show lower gate charge values?

A: Gate charge (Qg) varies with device design and manufacturing process. Lower Qg values (such as 13.5nC in STP10N60M2 versus 36nC in IXFP14N60P) indicate faster switching characteristics and reduced gate drive power requirements. This is a design trade-off and does not indicate incompatibility; lower Qg is generally advantageous for switching applications.

Q: Is the STP10NM60ND suitable for new product designs?

A: No. The STP10NM60ND carries Obsolete product status, indicating discontinued manufacturing and limited future availability. New designs must use Active products such as STP13NK60Z, STP10NM60N, or STP10N60M2 from STMicroelectronics, or the IXFP14N60P or IXFH14N60P from IXYS.

Q: How does power dissipation affect part selection?

A: Power dissipation (Pd) determines thermal management requirements. The IXFP14N60P is rated for 300W, while alternatives range from 70W to 150W. Applications requiring sustained high current operation generate proportionally higher power dissipation. Parts with lower Pd ratings require more aggressive cooling or operate only in lower-current applications.

Q: Are all listed parts RoHS3 compliant?

A: Yes. All parts listed—IXFP14N60P, IXFH14N60P, STP13NK60Z, STP10NM60N, STP10NM60ND, and STP10N60M2—carry RoHS3 compliance certification. All parts also maintain REACH Unaffected status and unlimited moisture sensitivity rating (MSL 1).

Q: What is the significance of the 600V Vdss rating?

A: Drain-Source Voltage (Vdss) specifies the maximum voltage the device can block between drain and source terminals. All listed parts maintain 600V Vdss, ensuring compatibility in applications designed for this voltage class. Substitution with lower-voltage devices is not permitted.

Q: Can I use a part with higher Rds On than the IXFP14N60P?

A: Higher on-state resistance increases conduction losses and heat generation. The IXFP14N60P specifies 550mOhm maximum. Substitutes with higher Rds On (such as 600mOhm in STP10NM60ND) generate additional heat and may require thermal design review. Selection depends on application thermal budget and acceptable power loss.

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