IXFP130N15X3 Equivalent & Substitute Parts

Part Overview

The IXFP130N15X3 is an N-Channel MOSFET manufactured by IXYS, part of the HiPerFET™ Ultra X3 series. This device is rated for 150V drain-to-source voltage with a continuous drain current of 130A at 25°C and maximum power dissipation of 390W. The component is housed in a TO-220-3 through-hole package and is classified as Active product status with full RoHS3 compliance.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges, or when alternative packaging configurations of the same electrical specification are required for circuit board layout optimization or inventory availability.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	150	V
Continuous Drain Current (Id) @ 25°C	130	A
On-State Resistance (Rds On Max) @ 65A, 10V	9	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 1.5mA	4.5	V
Gate Charge (Qg Max) @ 10V	80	nC
Maximum Gate Voltage (Vgs Max)	±20	V
Input Capacitance (Ciss Max) @ 25V	5230	pF
Power Dissipation (Max)	390	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3
Mounting Type	Through Hole

Substitute Part Grouping Explanation

Substitute parts for the IXFP130N15X3 are classified into two categories based on electrical and mechanical compatibility:

Parametric Equivalent (Full Electrical Match with Package Variation): Parts that maintain identical electrical specifications across all critical parameters but differ in package configuration. These substitutes are interchangeable at the circuit level when board layout permits the alternative package footprint.

Similar Parts (Reduced Current Rating with Voltage Compatibility): Parts that share the same drain-to-source voltage rating and gate drive characteristics but operate at reduced continuous drain current. These are suitable for applications where the full 130A rating is not required, provided thermal and current-handling requirements are met by the lower-rated device.

Key Parameters Determining Substitution:

Drain to Source Voltage (Vdss): Must equal or exceed 150V
Gate Drive Voltage: Must support 10V drive condition
Gate Threshold Voltage: Must be compatible with 4.5V maximum specification
Maximum Gate Voltage: Must support ±20V operation
Package Type: Must be through-hole configuration
RoHS3 Compliance: Required for all substitutes
Product Status: Must be Active

Parameter Comparison

Parameter	IXFP130N15X3	IXFH130N15X3	FDP083N15A-F102	TK42E12N1,S1X
Manufacturer	IXYS	IXYS	onsemi	Toshiba Semiconductor and Storage
Vdss (V)	150	150	150	120
Id @ 25°C (A)	130	130	83	88
Rds On Max @ 10V (mOhm)	9	9	8.3	9.4
Vgs(th) Max (V)	4.5	4.5	4	4
Qg Max @ 10V (nC)	80	80	84	52
Vgs Max (V)	±20	±20	±20	±20
Ciss Max (pF)	5230	5230	6040	3100
Power Dissipation Max (W)	390	390	294	140
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 175	to 150
Package	TO-220-3	TO-247-3	TO-220-3	TO-220-3
RoHS3 Compliant	Yes	Yes	Yes	Yes

Engineering Selection Recommendations

IXFH130N15X3 (IXYS TO-247 Package): This part is a direct parametric equivalent to the IXFP130N15X3, maintaining identical electrical specifications including 150V Vdss, 130A continuous drain current, 9mOhm Rds On, and 390W power dissipation. The sole difference is the package configuration: TO-247-3 versus TO-220-3. Selection of this substitute is appropriate when board layout requires the larger TO-247 footprint or when TO-247 mounting hardware is already specified. Both parts carry Active product status and full RoHS3 compliance. Inventory availability is confirmed at 1094 pieces.

FDP083N15A-F102 (onsemi PowerTrench®): This part maintains the 150V Vdss rating and TO-220-3 package configuration but operates at 83A continuous drain current, representing a 36% reduction from the IXFP130N15X3 specification. The on-state resistance is 8.3mOhm at 75A, and maximum power dissipation is 294W. This substitute is suitable for applications where the full 130A rating is not required. The device supports extended operating temperature to 175°C and carries Active product status with RoHS3 compliance. Inventory availability is confirmed at 1379 pieces.

TK42E12N1,S1X (Toshiba U-MOSVIII-H): This part operates at 120V Vdss, representing a 20V reduction from the IXFP130N15X3 specification. Continuous drain current is rated at 88A with 9.4mOhm Rds On and 140W maximum power dissipation. This substitute is applicable only to applications where the circuit voltage does not exceed 120V. The device carries Active product status and RoHS3 compliance. Inventory availability is confirmed at 995 pieces.

Frequently Asked Questions (FAQ)

Q: Can the IXFH130N15X3 be used as a direct replacement for the IXFP130N15X3?

A: The IXFH130N15X3 is electrically equivalent to the IXFP130N15X3 across all critical parameters. The difference is packaging: IXFH130N15X3 uses TO-247-3 while IXFP130N15X3 uses TO-220-3. Direct substitution is possible if the circuit board layout accommodates the TO-247 footprint and mounting hardware is compatible.

Q: Is the FDP083N15A-F102 suitable for all applications using the IXFP130N15X3?

A: The FDP083N15A-F102 is not a direct replacement. While it maintains the 150V Vdss rating and TO-220-3 package, the continuous drain current is limited to 83A compared to 130A for the IXFP130N15X3. This substitute is appropriate only for applications where the circuit current requirement does not exceed 83A and thermal dissipation at 294W maximum is acceptable.

Q: Can the TK42E12N1,S1X replace the IXFP130N15X3?

A: The TK42E12N1,S1X operates at 120V Vdss, which is 30V lower than the IXFP130N15X3 specification of 150V. This substitute is not suitable for circuits designed for 150V operation. Use is limited to applications where the maximum circuit voltage does not exceed 120V.

Q: What are the compliance certifications for all listed substitutes?

A: All listed substitutes—IXFH130N15X3, FDP083N15A-F102, and TK42E12N1,S1X—carry RoHS3 compliance and REACH Unaffected status. All are classified as Active products. The IXFP130N15X3 and IXFH130N15X3 share identical compliance profiles.

Q: How do gate charge specifications affect substitution?

A: Gate charge (Qg) affects switching speed and driver circuit requirements. The IXFP130N15X3 and IXFH130N15X3 both specify 80nC at 10V. The FDP083N15A-F102 specifies 84nC, and the TK42E12N1,S1X specifies 52nC. Differences in gate charge may require driver circuit evaluation but do not prevent substitution if the driver is rated for the specified gate charge range.

Q: Are there thermal considerations when selecting a substitute?

A: Yes. The IXFP130N15X3 and IXFH130N15X3 are rated for 390W maximum power dissipation. The FDP083N15A-F102 is rated for 294W, and the TK42E12N1,S1X is rated for 140W. Applications requiring sustained high power dissipation must verify that the selected substitute's thermal rating is adequate for the circuit's operating conditions.

Q: What is the difference between the IXFP130N15X3 and IXFH130N15X3 series designations?

A: Both parts belong to the IXYS HiPerFET™ Ultra X3 series. The IXFP designation indicates TO-220-3 package, while IXFH indicates TO-247-3 package. Electrical performance is identical; the series designation reflects the package configuration only.

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