IXFP130N10T2 Equivalent & Substitute Parts

Part Overview

The IXFP130N10T2 is an N-Channel MOSFET manufactured by IXYS, rated for 100V drain-to-source voltage with 130A continuous drain current at 25°C. This device is part of the HiPerFET™ and TrenchT2™ series and is housed in a TO-220-3 through-hole package. The part is currently in active production status with 1500 pieces in stock. Equivalent and substitute parts are identified based on matching or compatible electrical and mechanical parameters within the N-Channel MOSFET category, allowing for direct or near-direct replacement in circuit applications where the primary specifications align.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	130	A
Rds On (Max) @ 65A, 10V	9.1	mOhm
Gate Threshold Voltage (Vgs(th)) @ 1mA	4.5	V
Gate Charge (Qg) @ 10V	130	nC
Power Dissipation (Max)	360	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-220-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the IXFP130N10T2 is determined by the following critical parameters: drain-to-source voltage rating (Vdss), continuous drain current capability (Id), on-state resistance (Rds On), gate threshold voltage (Vgs(th)), and package compatibility (TO-220-3 through-hole). All identified substitute parts maintain the same 100V Vdss rating and TO-220-3 package format. Drain current ratings vary from 75A to 108A, representing lower current capability than the primary part. On-state resistance values remain within comparable ranges (9.0 to 10.5 mOhm), ensuring similar conduction losses. Gate charge and input capacitance values differ across substitutes but remain within acceptable operating parameters for standard switching applications. All substitute parts operate across the same temperature range (-55°C to 175°C) and maintain RoHS3 compliance and REACH unaffected status.

Parameter Comparison

Parameter	IXFP130N10T2	CSD19503KCS	CSD19533KCS	DMTH10H010LCT	FDP090N10	IRFB4410PBF	IRFB4410ZPBF
Manufacturer	IXYS	Texas Instruments	Texas Instruments	Diodes Incorporated	onsemi	Infineon Technologies	Infineon Technologies
Vdss (V)	100	80	100	100	100	100	100
Id @ 25°C (A)	130	100	100	108	75	88	97
Rds On (Max) @ 10V (mOhm)	9.1	9.2	10.5	9.5	9.0	10.0	9.0
Vgs(th) (Max) (V)	4.5	3.4	3.4	3.5	4.5	4.0	4.0
Gate Charge (Qg) @ 10V (nC)	130	36	35	53.7	116	180	120
Power Dissipation (Max) (W)	360	188	188	166	208	200	230
Operating Temperature (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220AB	TO-220AB
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

All substitute parts listed maintain active product status and full RoHS3 compliance with REACH unaffected designation, meeting current regulatory requirements for electronic component procurement.

CSD19533KCS (Texas Instruments) provides the closest electrical match to the IXFP130N10T2, maintaining identical 100V Vdss rating with 100A continuous drain current. This part offers significantly lower gate charge (35 nC versus 130 nC), resulting in faster switching characteristics. With 24,400 pieces in inventory, this part demonstrates high availability. The lower power dissipation rating (188W versus 360W) indicates reduced thermal performance compared to the primary part.

IRFB4410ZPBF (Infineon Technologies) offers 97A continuous drain current at 100V with 230W power dissipation, providing the highest power handling among substitutes while maintaining 9.0 mOhm on-state resistance. Inventory availability is substantial at 105,300 pieces. Gate charge of 120 nC falls between lower-gate-charge and higher-gate-charge alternatives.

DMTH10H010LCT (Diodes Incorporated) delivers 108A continuous drain current at 100V with 166W power dissipation. This part maintains compatibility with the primary device's electrical specifications while offering moderate inventory levels (813 pieces).

FDP090N10 (onsemi) provides 75A continuous drain current at 100V with 208W power dissipation and 9.0 mOhm on-state resistance. This part is suitable for applications requiring lower current handling with 4,089 pieces available.

CSD19503KCS (Texas Instruments) operates at reduced 80V Vdss rating with 100A continuous drain current. This part is not suitable for applications requiring full 100V voltage rating but may serve in lower-voltage circuit variants.

Frequently Asked Questions (FAQ)

Q: Can the CSD19533KCS directly replace the IXFP130N10T2 in all applications?

A: The CSD19533KCS maintains the same 100V Vdss rating and TO-220-3 package, making it mechanically and electrically compatible for most applications. However, the continuous drain current is reduced from 130A to 100A, and power dissipation capability decreases from 360W to 188W. Applications operating at or near the 130A current limit require evaluation to confirm the 100A rating is sufficient.

Q: What is the significance of gate charge differences between these parts?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The IXFP130N10T2 has 130 nC gate charge, while substitutes range from 35 nC to 180 nC. Lower gate charge enables faster switching and reduced driver power consumption. Higher gate charge may require stronger gate drive circuits. Selection depends on the specific gate driver capability in the application.

Q: Are TO-220-3 and TO-220AB packages interchangeable?

A: TO-220-3 and TO-220AB are mechanically compatible through-hole packages with identical pin configurations and mounting footprints. The primary difference is internal lead frame design. Both packages fit standard TO-220 PCB layouts and heatsink mounting arrangements. IRFB4410PBF and IRFB4410ZPBF use TO-220AB packaging and are compatible with TO-220-3 footprints.

Q: Which substitute part offers the best thermal performance?

A: The IRFB4410ZPBF provides the highest power dissipation rating at 230W, followed by FDP090N10 at 208W and IRFB4410PBF at 200W. The IXFP130N10T2 primary part exceeds all substitutes at 360W. Thermal performance depends on both the power dissipation rating and the specific application's thermal management design.

Q: What is the impact of lower continuous drain current ratings on circuit operation?

A: Substitute parts with lower Id ratings (75A to 108A versus 130A) are suitable for applications where peak and continuous current demands do not exceed the substitute's rating. Exceeding the rated continuous current causes excessive heat generation and potential device failure. Circuit analysis must confirm that actual operating currents remain within the selected part's specifications.

Q: Do all substitute parts meet the same compliance standards as the IXFP130N10T2?

A: All listed substitute parts maintain RoHS3 compliance and REACH unaffected status, matching the primary part's regulatory compliance. All parts operate across the identical temperature range of -55°C to 175°C. Moisture sensitivity levels vary; the IXFP130N10T2, DMTH10H010LCT, IRFB4410PBF, and IRFB4410ZPBF are rated MSL 1 (Unlimited), while Texas Instruments parts show not applicable MSL designation.

Q: How does on-state resistance (Rds On) affect circuit performance?

A: On-state resistance determines conduction losses when the MOSFET is in the on state. The IXFP130N10T2 has 9.1 mOhm at 65A and 10V. Substitute parts range from 9.0 to 10.5 mOhm, representing minimal variation in conduction losses. Lower Rds On values reduce heat generation and improve efficiency. The FDP090N10 and IRFB4410ZPBF both achieve 9.0 mOhm, matching the primary part's efficiency characteristics.

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