IXFP130N10T N-Channel Power MOSFET Equivalent & Substitute Parts

Part Overview

The IXFP130N10T is an N-Channel power MOSFET manufactured by IXYS, designed for high-current switching applications. This device operates at 100V drain-to-source voltage with a continuous drain current rating of 130A at 25°C case temperature, delivering 360W maximum power dissipation. The part is housed in a TO-220-3 through-hole package and belongs to the HiPerFET™ Trench technology series. The IXFP130N10T maintains Active product status with full RoHS3 compliance and unlimited moisture sensitivity rating (MSL 1).

Equivalent and substitute parts are necessary when the primary device becomes unavailable, when design requirements demand alternative thermal or electrical characteristics, or when supply chain optimization requires component standardization across manufacturing facilities.

Key Parameters

Parameter	Value	Unit	Condition
Drain-to-Source Voltage (Vdss)	100	V	Maximum rating
Continuous Drain Current (Id)	130	A	@ 25°C case temperature
On-State Resistance (Rds On)	9.1	mOhm	@ 25A, 10V gate drive
Gate Threshold Voltage (Vgs(th))	4.5	V	@ 1mA drain current
Gate Charge (Qg)	104	nC	@ 10V gate-source voltage
Power Dissipation (Max)	360	W	@ case temperature
Operating Temperature Range	-55 to 175	°C	Junction temperature
Package Type	TO-220-3	—	Through-hole
Maximum Gate Voltage	±20	V	Gate-source rating

Substitute Part Grouping Explanation

Substitution eligibility for the IXFP130N10T is determined by the following critical parameters:

Voltage Class Compatibility: All substitute parts must maintain a Vdss rating of 100V or greater to ensure safe operation within the original circuit voltage envelope.

Current Rating Alignment: Substitute devices must support continuous drain current (Id) ratings of 100A or higher at 25°C case temperature. The IXFP130N10T's 130A rating establishes the baseline; lower-rated devices represent functional substitutes for current-limited applications.

On-State Resistance (Rds On): Substitute parts must exhibit Rds On values within 9.1–10.5 mOhm at 10V gate drive to maintain comparable power dissipation and thermal performance.

Package Compatibility: All substitute parts must use TO-220-3 through-hole packaging to ensure mechanical and thermal interface compatibility with existing PCB designs.

Temperature Range: Operating temperature range must span -55°C to 175°C junction temperature to match the original device's thermal operating window.

Compliance & Status: All substitute parts must maintain RoHS3 compliance and Active or equivalent product status to ensure long-term availability and regulatory alignment.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Power Diss. (W)	Status
IXFP130N10T	IXYS	100	130	9.1	104	360	Active
CSD19533KCS	Texas Instruments	100	100	10.5	35	188	Active
DMT10H010LCT	Diodes Incorporated	100	98	9.5	71	139	Active
DMTH10H010LCT	Diodes Incorporated	100	108	9.5	53.7	166	Active
CSD19503KCS	Texas Instruments	80	100	9.2	36	188	Active
IPP100N08N3GXKSA1	Infineon Technologies	80	70	10	35	100	Obsolete
IRFB4410PBF	Infineon Technologies	100	88	10	180	200	Active
STP120NF10	STMicroelectronics	100	110	10.5	233	312	Active
SUP70090E-GE3	Vishay Siliconix	100	50	8.9	50	125	Active
SUP85N10-10-GE3	Vishay Siliconix	100	85	10.5	160	250	Active

Engineering Selection Recommendations

Primary Substitutes (100V Class, ≥100A Rating):

CSD19533KCS (Texas Instruments NexFET™) and DMTH10H010LCT (Diodes Incorporated) are the most direct functional equivalents. Both maintain 100V Vdss rating, support ≥100A continuous drain current, and exhibit Rds On values within the acceptable range. CSD19533KCS offers superior gate charge characteristics (35 nC) and higher inventory availability (24,400 units). DMTH10H010LCT provides marginally higher current capacity (108A) with moderate gate charge (53.7 nC). Both devices maintain Active product status and full RoHS3 compliance.

Secondary Substitutes (100V Class, 85–98A Rating):

SUP85N10-10-GE3 (Vishay Siliconix TrenchFET®) and DMT10H010LCT (Diodes Incorporated) function as current-limited alternatives. SUP85N10-10-GE3 delivers 85A continuous current with 250W power dissipation and maintains extensive inventory (15,265 units). DMT10H010LCT provides 98A capacity with lower power dissipation (139W). Both are suitable for applications where the full 130A rating is not required.

Voltage-Reduced Alternatives (80V Class):

CSD19503KCS (Texas Instruments) and IPP100N08N3GXKSA1 (Infineon Technologies) operate at 80V Vdss. CSD19503KCS maintains 100A current rating and Active status, making it suitable for circuits with reduced voltage headroom. IPP100N08N3GXKSA1 is marked Obsolete and should be avoided for new designs despite its technical compatibility.

Thermal Performance Consideration:

IRFB4410PBF (Infineon HEXFET®) and STP120NF10 (STMicroelectronics STripFET™ II) deliver higher power dissipation (200W and 312W respectively) but exhibit elevated gate charge (180 nC and 233 nC). These devices are suitable for applications prioritizing thermal margin over switching speed.

Compliance & Availability:

All recommended Active-status substitutes maintain RoHS3 compliance, REACH Unaffected status, and EAR99 export classification. Avoid IPP100N08N3GXKSA1 due to Obsolete designation. Prioritize parts with highest inventory levels for supply chain resilience.

Frequently Asked Questions (FAQ)

Q: Can CSD19533KCS replace IXFP130N10T in all applications?

A: CSD19533KCS is functionally compatible for applications requiring up to 100A continuous drain current at 100V. The IXFP130N10T's 130A rating exceeds this threshold. If your circuit operates below 100A, CSD19533KCS is a direct substitute. If peak or sustained current exceeds 100A, alternative parts or circuit redesign is required.

Q: Why is IPP100N08N3GXKSA1 listed as Obsolete?

A: IPP100N08N3GXKSA1 carries Obsolete product status from Infineon Technologies. While technically compatible for 80V applications, obsolete parts face supply discontinuation and should not be selected for new designs. Use Active-status alternatives such as CSD19503KCS instead.

Q: What is the impact of different Rds On values on circuit performance?

A: On-state resistance directly affects power dissipation and thermal performance. The IXFP130N10T exhibits 9.1 mOhm Rds On. Substitute parts ranging from 8.9 to 10.5 mOhm produce comparable thermal behavior. Higher Rds On values (>10.5 mOhm) increase power dissipation and may require enhanced thermal management.

Q: Are all substitute parts pin-compatible with TO-220-3 packaging?

A: Yes. All listed substitute parts use TO-220-3 through-hole packaging with identical pin configuration (Gate, Drain, Source). Mechanical and electrical interface compatibility is guaranteed. Verify PCB footprint dimensions match TO-220-3 standard specifications.

Q: Can I use SUP70090E-GE3 as a substitute despite its lower 50A rating?

A: SUP70090E-GE3 is suitable only for applications where continuous drain current does not exceed 50A. The IXFP130N10T's 130A rating cannot be matched by this device. Use SUP70090E-GE3 only if circuit analysis confirms sustained current below 50A.

Q: What is the significance of Gate Charge (Qg) differences?

A: Gate charge affects switching speed and driver power requirements. The IXFP130N10T exhibits 104 nC Qg. Substitutes with lower Qg (35–71 nC) enable faster switching and reduced driver stress. Higher Qg values (160–233 nC) require more robust gate drivers but do not prevent functional substitution.

Q: Do all substitutes maintain the same operating temperature range?

A: Yes. All listed substitute parts operate across -55°C to 175°C junction temperature, matching the IXFP130N10T's thermal envelope. This ensures compatibility in applications spanning industrial, automotive, and high-temperature environments.

Q: Is RoHS3 compliance mandatory for substitution?

A: RoHS3 compliance is mandatory for new designs and regulated applications. All recommended Active-status substitutes maintain RoHS3 compliance. Ensure your application requirements align with regulatory standards before final part selection.

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