IXFN90N30 Equivalent & Substitute Parts

Part Overview

The IXFN90N30 is an N-Channel MOSFET rated for 300V drain-to-source voltage with 90A continuous drain current at 25°C. This device is housed in a SOT-227B chassis mount package and is part of the IXYS HiPerFET™ series. The part is currently classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support, maintenance, and production continuity. Substitute parts must maintain compatibility across electrical ratings, thermal characteristics, and mechanical packaging to ensure direct replacement capability.

Substiute Parts

IXFN90N30
IXYSIn Stock: 68592IXFN90N30 Datasheet
IXFN90N30
Current Part
IXFN140N30P
IXYSIn Stock: 68652IXFN140N30P Datasheet
IXFN140N30P
Direct

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 300 V
Continuous Drain Current (Id) @ 25°C 90 A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs 33 mOhm @ 45A, 10V mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id 4 V @ 8mA
Power Dissipation (Max) 560 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Package Type SOT-227B (miniBLOC) Chassis Mount
Mounting Type Chassis Mount

Substitute Part Grouping Explanation

Substitute parts for the IXFN90N30 are identified based on the following critical parameters that define functional equivalence:

Electrical Compatibility Criteria:

  • Drain to Source Voltage (Vdss): Must equal or exceed 300V
  • Package Type: Must be SOT-227B (miniBLOC) for mechanical and thermal compatibility
  • Mounting Type: Must be Chassis Mount
  • Operating Temperature Range: Must support -55°C to 150°C (TJ)
  • Gate Voltage Rating (Vgs Max): Must be ±20V or greater

Substitution Logic: The IXFN140N30P qualifies as a direct substitute because it maintains identical voltage ratings (300V Vdss), identical package configuration (SOT-227B), identical mounting type (Chassis Mount), and identical operating temperature range. The substitute part demonstrates enhanced electrical performance through higher continuous drain current (110A vs. 90A) and improved on-state resistance characteristics, making it a drop-in replacement with superior thermal and current-handling capabilities.

Parameter Comparison

Parameter IXFN90N30 IXFN140N30P Unit
Manufacturer IXYS IXYS
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 300 V
Continuous Drain Current (Id) @ 25°C 90 110 A (Tc)
Drive Voltage (Max Rds On) 10 10 V
Rds On (Max) @ Id, Vgs 33 mOhm @ 45A, 10V 24 mOhm @ 70A, 10V mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id 4 5 V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 360 185 nC @ 10V
Vgs (Max) ±20 ±20 V
Input Capacitance (Ciss) (Max) @ Vds 10000 14800 pF @ 25V
Power Dissipation (Max) 560 700 W (Tc)
Operating Temperature Range -55 to 150 -55 to 150 °C (TJ)
Package / Case SOT-227-4, miniBLOC SOT-227-4, miniBLOC
Mounting Type Chassis Mount Chassis Mount
Series HiPerFET™ HiPerFET™, Polar
Product Status Obsolete Active
REACH Status REACH Unaffected REACH Unaffected
ECCN EAR99 EAR99
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

IXFN140N30P as Primary Substitute:

The IXFN140N30P is the qualified substitute for the obsolete IXFN90N30. Selection of this part is based on the following engineering factors:

Product Status Alignment: The IXFN140N30P maintains Active product status, ensuring ongoing manufacturer support, availability, and compliance with current regulatory requirements. The original IXFN90N30 is classified as Obsolete, creating supply chain risk and limiting access to technical support.

Regulatory and Compliance Equivalence: Both parts share identical REACH status (REACH Unaffected), ECCN classification (EAR99), and Moisture Sensitivity Level (MSL 1 - Unlimited). The substitute part maintains RoHS3 compliance, meeting modern environmental and safety standards.

Electrical and Thermal Performance: The IXFN140N30P provides enhanced performance characteristics while maintaining full backward compatibility. The higher continuous drain current rating (110A vs. 90A), improved on-state resistance (24 mOhm vs. 33 mOhm at comparable conditions), and increased power dissipation capability (700W vs. 560W) enable the substitute to handle equivalent or higher-demand applications without derating.

Mechanical and Thermal Interface: Identical SOT-227B package configuration and Chassis Mount design ensure mechanical fit and thermal interface compatibility with existing PCB layouts and heat sink assemblies. No redesign of mechanical mounting or thermal management systems is required.

Frequently Asked Questions (FAQ)

Q: Can the IXFN140N30P directly replace the IXFN90N30 in existing designs?

A: Yes. The IXFN140N30P is a direct substitute. Both devices share identical voltage ratings (300V Vdss), package type (SOT-227B miniBLOC), mounting configuration (Chassis Mount), and operating temperature range (-55°C to 150°C). The substitute part requires no circuit modifications or PCB redesign.

Q: What are the key differences between these two parts?

A: The primary differences are product status and performance enhancements. The IXFN140N30P is Active (vs. Obsolete), provides higher continuous drain current (110A vs. 90A), lower on-state resistance (24 mOhm vs. 33 mOhm), reduced gate charge (185 nC vs. 360 nC), and higher power dissipation capability (700W vs. 560W). These differences represent performance improvements, not incompatibilities.

Q: Are there any thermal management considerations when substituting?

A: No additional thermal management is required. The IXFN140N30P maintains the same SOT-227B Chassis Mount package and thermal interface as the original part. The higher power dissipation rating (700W vs. 560W) provides additional thermal margin, potentially reducing cooling requirements in thermally constrained applications.

Q: Does the substitute part require different gate drive circuitry?

A: No. Both parts share identical gate voltage specifications (Vgs Max ±20V) and similar gate threshold characteristics (4V vs. 5V). Existing gate drive circuits designed for the IXFN90N30 operate directly with the IXFN140N30P without modification. The lower gate charge of the substitute (185 nC vs. 360 nC) may improve switching performance.

Q: Are there any compliance or regulatory differences?

A: No. Both parts maintain identical REACH status (REACH Unaffected), ECCN classification (EAR99), and Moisture Sensitivity Level (MSL 1). The IXFN140N30P adds RoHS3 compliance, meeting current environmental standards. No additional compliance documentation or certification is required for substitution.

Q: What is the packaging difference between these parts?

A: The IXFN90N30 is supplied in standard packaging, while the IXFN140N30P is supplied in Tube packaging. Both use the identical SOT-227B (miniBLOC) component package. The difference is in the shipping and handling container only, with no impact on component form factor or PCB integration.

Q: Can the IXFN140N30P be used in applications requiring lower current ratings?

A: Yes. The IXFN140N30P is fully backward compatible for lower current applications. The higher current rating (110A vs. 90A) and improved on-state resistance provide performance margin without creating incompatibility. Applications originally designed for 90A operation operate within the safe operating area of the 110A-rated substitute.

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