IXFN82N60P N-Channel 600V 72A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFN82N60P is an N-Channel MOSFET manufactured by IXYS, rated for 600V drain-to-source voltage and 72A continuous drain current at 25°C. This device operates in the HiPerFET™ series and is housed in a SOT-227B (miniBLOC) chassis mount package. The part is Active in product status and fully compliant with RoHS3 and REACH regulations.

Equivalent and substitute parts are identified when alternative devices share the same critical electrical parameters—specifically drain-to-source voltage rating, continuous drain current capability, gate drive voltage, and thermal operating range—while maintaining compatibility with the same or functionally equivalent package types. Substitutes may differ in gate charge, on-resistance characteristics, or power dissipation ratings, provided the application requirements remain satisfied within the specified operating conditions.

Substiute Parts

IXFN82N60P

IXYSIn Stock: 3074IXFN82N60P Datasheet

Current PartRFQ

APT47M60J

Microchip TechnologyIn Stock: 892APT47M60J Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFN82N60P is determined by equivalence in the following critical parameters:

Primary Substitution Criteria:

• Drain-to-Source Voltage (Vdss): 600V (exact match required)
• FET Type: N-Channel (exact match required)
• Technology: MOSFET (Metal Oxide) (exact match required)
• Gate Drive Voltage: 10V (exact match required)
• Vgs(th) Maximum: 5V @ specified Id (exact match required)
• Vgs Maximum: ±30V (exact match required)
• Operating Temperature Range: -55°C to 150°C (exact match required)
• Mounting Type: Chassis Mount (exact match required)
• Package Type: SOT-227-4, miniBLOC or functionally equivalent (exact match required)
• Compliance: RoHS3 Compliant, REACH Unaffected (exact match required)

Secondary Parameters (May Vary Within Application Limits):

• Continuous Drain Current (Id): Substitutes may have lower ratings; application must operate within substitute current limits
• Rds On (Max): Substitutes may have higher on-resistance; thermal and efficiency requirements must be re-evaluated
• Gate Charge (Qg): Substitutes may differ; gate drive circuit design must accommodate the specified gate charge
• Input Capacitance (Ciss): Substitutes may differ; switching speed and gate drive requirements must be verified against application specifications
• Power Dissipation (Max): Substitutes may have lower thermal ratings; thermal management design must be re-evaluated

The APT47M60J from Microchip Technology meets all primary substitution criteria and is classified as a direct substitute for the IXFN82N60P.

Parameter Comparison

Engineering Selection Recommendations

IXFN82N60P (Primary Part)

The IXFN82N60P is the primary selection for applications requiring 72A continuous drain current at 600V. This device is Active in product status with 2970 units in stock. Full RoHS3 compliance and REACH unaffected status confirm regulatory alignment. The 1040W maximum power dissipation and 75mOhm on-resistance at 41A, 10V provide the performance baseline for this voltage class.

APT47M60J (Substitute Part)

The APT47M60J from Microchip Technology is a qualified substitute when the application continuous drain current requirement does not exceed 49A at 25°C. This device is Active in product status with 860 units in stock. Full RoHS3 compliance and REACH unaffected status match the primary part. The APT47M60J exhibits lower power dissipation (540W maximum) and lower input capacitance (13190 pF), which may reduce gate drive power requirements in switching applications. The higher gate charge (330 nC versus 240 nC) requires gate drive circuit evaluation.

Selection Criteria:

• Select IXFN82N60P when continuous drain current exceeds 49A or when the 1040W power dissipation capability is required
• Select APT47M60J when continuous drain current is limited to 49A or below and reduced power dissipation is acceptable
• Both parts share identical voltage ratings, gate threshold voltage, maximum gate voltage, and operating temperature range
• Both parts are housed in SOT-227-4 miniBLOC packages with identical mounting type and thermal interface requirements
• Both parts carry equivalent regulatory compliance certifications

Frequently Asked Questions (FAQ)

Q: Can the APT47M60J directly replace the IXFN82N60P in all applications?

A: The APT47M60J is a direct substitute only when the application continuous drain current requirement does not exceed 49A at 25°C. If the application requires sustained current above 49A, the IXFN82N60P must be used. Both devices share identical voltage ratings, gate drive voltage, threshold voltage, and operating temperature range, ensuring compatibility in gate drive circuits and thermal management interfaces.

Q: What is the impact of the higher gate charge in the APT47M60J?

A: The APT47M60J has a gate charge of 330 nC at 10V compared to 240 nC for the IXFN82N60P. This 37.5% increase in gate charge affects the gate drive circuit design. Higher gate charge requires either increased gate drive current or extended switching time. The gate drive circuit must be evaluated to confirm it can supply the required charge within the application's switching frequency and timing constraints.

Q: Are the package dimensions and thermal interfaces identical between these parts?

A: Both the IXFN82N60P and APT47M60J use the SOT-227-4 miniBLOC package with chassis mount configuration. The physical dimensions and thermal interface characteristics are identical, allowing direct mechanical substitution. Thermal management design based on the primary part's 1040W dissipation must be re-evaluated for the substitute part's 540W maximum dissipation.

Q: What are the compliance and regulatory differences between these parts?

A: Both parts are RoHS3 compliant and REACH unaffected. Both carry Moisture Sensitivity Level 1 (Unlimited), indicating no moisture sensitivity restrictions. Both are classified under ECCN EAR99 and HTSUS 8541.29.0095. No regulatory or compliance differences exist between the two devices.

Q: How do the on-resistance characteristics compare?

A: The IXFN82N60P has a maximum on-resistance of 75 mOhm at 41A and 10V gate voltage. The APT47M60J has a maximum on-resistance of 90 mOhm at 33A and 10V gate voltage. The APT47M60J exhibits higher on-resistance, which increases conduction losses. Applications sensitive to efficiency or thermal performance must account for this 20% increase in on-resistance at the specified test conditions.

Q: What is the significance of the lower input capacitance in the APT47M60J?

A: The APT47M60J has an input capacitance of 13190 pF at 25V compared to 23000 pF for the IXFN82N60P. The 43% reduction in input capacitance reduces the capacitive load on the gate drive circuit, potentially lowering gate drive power consumption and improving switching speed. This characteristic is beneficial in high-frequency switching applications where gate drive efficiency is critical.

Q: Can these parts be used interchangeably in high-frequency switching applications?

A: Interchangeability in high-frequency applications requires evaluation of gate charge, input capacitance, and gate drive circuit capability. The APT47M60J has higher gate charge (330 nC) but lower input capacitance (13190 pF). The gate drive circuit must be confirmed to handle the increased gate charge within the application's switching frequency. The lower input capacitance may improve switching performance, but this must be validated against the specific application's switching frequency and gate drive design.