IXFN80N50Q2 Equivalent & Substitute Parts

Part Overview

The IXFN80N50Q2 is an N-Channel MOSFET rated for 500V drain-to-source voltage with 72A continuous drain current at 25°C. Manufactured by IXYS under the HiPerFET™ Q2 Class series, this device is housed in a SOT-227B chassis mount package and is classified as Active product status. The component is ROHS3 compliant and REACH unaffected, making it suitable for modern industrial and power conversion applications.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining the same package form factor and thermal characteristics. Alternative models may be required due to inventory constraints, design optimization, or application-specific performance requirements.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	72	A (Tc)
Rds On (Max) @ 10V	60	mOhm
Gate Threshold Voltage (Vgs(th)) (Max)	4.5	V @ 8mA
Gate Charge (Qg) (Max) @ 10V	250	nC
Power Dissipation (Max)	890	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	SOT-227B	miniBLOC
Mounting Type	Chassis Mount

Substitute Part Grouping Explanation

Substitution eligibility for the IXFN80N50Q2 is determined by the following critical parameters:

Voltage Rating: All substitute parts must maintain a Drain to Source Voltage (Vdss) of 500V to ensure compatibility with the application circuit design.

Current Capability: Continuous drain current (Id) at 25°C must be equal to or greater than 72A to support the same or higher load conditions.

On-State Resistance (Rds On): The maximum on-state resistance at 10V gate drive must be within acceptable limits to maintain thermal performance and power dissipation characteristics.

Gate Charge (Qg): Gate charge specifications affect switching speed and driver circuit requirements. Substitute parts with comparable gate charge values ensure consistent gate drive performance.

Package and Mounting: All substitute parts must use the SOT-227B package with chassis mount configuration to maintain mechanical and thermal interface compatibility.

Compliance Status: All substitute parts must maintain ROHS3 compliance and REACH unaffected status to meet regulatory requirements.

The IXFN100N50Q3 and STE53NC50 are identified as equivalent substitutes based on these criteria, though with specific performance trade-offs documented in the parameter comparison table.

Parameter Comparison

Parameter	IXFN80N50Q2	IXFN100N50Q3	STE53NC50	Unit
Manufacturer	IXYS	IXYS	STMicroelectronics
Drain to Source Voltage (Vdss)	500	500	500	V
Continuous Drain Current (Id) @ 25°C	72	82	53	A (Tc)
Rds On (Max) @ 10V	60	49	80	mOhm
Gate Threshold Voltage (Vgs(th)) (Max)	4.5	6.5	4.0	V @ specified Id
Gate Charge (Qg) (Max) @ 10V	250	255	434	nC
Input Capacitance (Ciss) (Max) @ 25V	12800	13800	11200	pF
Power Dissipation (Max)	890	960	460	W (Tc)
Operating Temperature Range	-55 to 150	-55 to 150	-55 to 150	°C (TJ)
Package Type	SOT-227B	SOT-227B	ISOTOP®
Mounting Type	Chassis Mount	Chassis Mount	Chassis Mount
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

IXFN100N50Q3 (IXYS HiPerFET™ Q3 Class)

The IXFN100N50Q3 provides enhanced current capability at 82A continuous drain current, exceeding the IXFN80N50Q2 specification by 10A. The on-state resistance is reduced to 49mOhm, delivering improved thermal efficiency and lower power dissipation during conduction. This device maintains identical voltage rating, operating temperature range, and package configuration. Both components share ROHS3 compliance and REACH unaffected status. The IXFN100N50Q3 is suitable for applications requiring higher current capacity or improved efficiency within the same thermal envelope.

STE53NC50 (STMicroelectronics PowerMESH™ II)

The STE53NC50 operates at 500V with 53A continuous drain current, representing a reduced current capability compared to the IXFN80N50Q2. The on-state resistance is specified at 80mOhm, resulting in higher conduction losses. Gate charge is significantly higher at 434nC, affecting switching speed and gate driver requirements. The package configuration differs, using ISOTOP® instead of SOT-227B, requiring mechanical redesign of the mounting interface. This device maintains ROHS3 compliance and REACH unaffected status. The STE53NC50 is applicable only in applications where current requirements are lower and package form factor can be accommodated.

Both substitute parts maintain Active product status and full regulatory compliance. Selection between alternatives depends on specific application requirements for current capacity, thermal performance, and mechanical constraints.

Frequently Asked Questions (FAQ)

Q: Can the IXFN100N50Q3 be used as a direct replacement for the IXFN80N50Q2?

A: The IXFN100N50Q3 is electrically compatible within the same circuit topology. Both devices share identical 500V voltage rating, -55°C to 150°C operating temperature range, and SOT-227B package configuration. The IXFN100N50Q3 provides higher current capacity (82A vs. 72A) and lower on-state resistance (49mOhm vs. 60mOhm), making it suitable for direct substitution in applications where these enhanced characteristics are acceptable or beneficial.

Q: What are the limitations of using the STE53NC50 as a substitute?

A: The STE53NC50 has reduced continuous drain current (53A vs. 72A), making it unsuitable for applications requiring the full 72A current specification. The on-state resistance is higher at 80mOhm, resulting in increased power dissipation. Gate charge is significantly elevated at 434nC, requiring gate driver circuit adjustments. Most critically, the package type is ISOTOP® rather than SOT-227B, necessitating mechanical redesign of the mounting interface and thermal management system.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. The IXFN80N50Q2, IXFN100N50Q3, and STE53NC50 are all ROHS3 compliant and REACH unaffected, meeting current regulatory requirements for electronic component manufacturing and use.

Q: How does gate charge affect device selection?

A: Gate charge (Qg) determines the amount of charge required to switch the MOSFET on and off. The IXFN80N50Q2 and IXFN100N50Q3 have comparable gate charge values (250nC and 255nC respectively), ensuring similar gate driver performance. The STE53NC50 has significantly higher gate charge at 434nC, requiring a more capable gate driver circuit with higher current output to achieve equivalent switching speeds.

Q: Can package type differences affect thermal performance?

A: Yes. The SOT-227B package used by IXFN80N50Q2 and IXFN100N50Q3 has established thermal characteristics and mounting interfaces. The ISOTOP® package used by STE53NC50 has different thermal resistance and mounting requirements. Direct substitution between different package types requires thermal analysis and potential redesign of the heat sink interface to maintain equivalent thermal performance.

Q: What is the significance of on-state resistance (Rds On) in substitution?

A: On-state resistance directly affects conduction losses and heat generation. Lower Rds On values reduce power dissipation during normal operation. The IXFN100N50Q3 at 49mOhm provides superior efficiency compared to the IXFN80N50Q2 at 60mOhm. The STE53NC50 at 80mOhm generates higher losses. Selection depends on thermal budget and efficiency requirements of the application.

Q: Are there inventory considerations for these substitute parts?

A: Inventory levels are provided for reference only and do not affect technical substitution eligibility. The IXFN80N50Q2 has 68,756 pieces in stock, IXFN100N50Q3 has 68,656 pieces, and STE53NC50 has 3,500 pieces available. Inventory status may change and should be verified at the time of procurement.

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