IXFN80N50P N-Channel 500V 66A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFN80N50P is an N-Channel metal oxide semiconductor field-effect transistor (MOSFET) manufactured by IXYS, rated for 500V drain-to-source voltage and 66A continuous drain current at 25°C. This device is part of the HiPerFET™ series and is housed in a SOT-227B chassis mount package. The IXFN80N50P is classified as Active product status with full RoHS3 compliance and unlimited moisture sensitivity rating.

Equivalent and substitute parts are identified based on matching electrical specifications including drain-to-source voltage rating, continuous drain current capability, gate drive voltage, on-state resistance characteristics, and thermal performance parameters. Substitutes maintain compatibility with the SOT-227B/miniBLOC package family and chassis mount configuration.

Substiute Parts

IXFN80N50P

IXYSIn Stock: 2174IXFN80N50P Datasheet

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APT50M65JLL

Microchip TechnologyIn Stock: 672APT50M65JLL Datasheet

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STE53NC50

STMicroelectronicsIn Stock: 3551STE53NC50 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IXFN80N50P are qualified based on the following electrical and mechanical parameters:

Primary Matching Criteria:

• Drain-to-Source Voltage (Vdss): 500V (exact match required)
• FET Type: N-Channel (exact match required)
• Technology: Metal Oxide MOSFET (exact match required)
• Mounting Type: Chassis Mount (exact match required)
• Package Family: SOT-227-4 or miniBLOC compatible (mechanical compatibility)

Secondary Compatibility Parameters:

• Continuous Drain Current (Id): Minimum 53A (allows for lower current ratings in applications not requiring full 66A capacity)
• Drive Voltage: 10V (standard gate drive voltage)
• Gate Threshold Voltage (Vgs th): 4V to 5V range (compatible gate drive characteristics)
• Maximum Gate Voltage (Vgs Max): ±30V (standard rating across all candidates)
• Operating Temperature Range: -55°C to 150°C (thermal compatibility)
• RoHS3 Compliance: Required
• Moisture Sensitivity Level: MSL 1 (Unlimited)

Substitutes may exhibit variations in on-state resistance, gate charge, input capacitance, and maximum power dissipation within acceptable engineering tolerances for the 500V N-Channel MOSFET category.

Parameter Comparison

Engineering Selection Recommendations

IXFN80N50P (Primary Part)

The IXFN80N50P remains the primary selection for applications requiring the full 66A continuous drain current rating and 700W maximum power dissipation. This device is Active status with full RoHS3 compliance, unlimited moisture sensitivity rating, and REACH unaffected classification. The HiPerFET™ series designation indicates optimized performance characteristics for high-efficiency switching applications.

APT50M65JLL (Microchip Technology Substitute)

The APT50M65JLL is suitable for applications where continuous drain current can be reduced to 58A. This substitute maintains the 500V Vdss rating, 10V drive voltage, and identical ±30V gate voltage specification. The APT50M65JLL exhibits lower gate charge (141 nC versus 195 nC) and reduced input capacitance (7010 pF versus 12700 pF), resulting in faster switching characteristics. Maximum power dissipation is 520W. The device is Active status with RoHS3 compliance and unlimited moisture sensitivity. The POWER MOS 7® series designation indicates current-generation technology. Package compatibility is maintained within the SOT-227-4/miniBLOC family.

STE53NC50 (STMicroelectronics Substitute)

The STE53NC50 is applicable for applications where continuous drain current requirement is 53A or lower. This substitute maintains the 500V Vdss rating and 10V drive voltage. The STE53NC50 exhibits higher gate charge (434 nC) and higher on-state resistance (80 mOhm at 27A) compared to the main part, resulting in slower switching and increased conduction losses. Maximum power dissipation is 460W. The device is Active status with RoHS3 compliance and unlimited moisture sensitivity. The PowerMESH™ II series designation indicates established technology. Package designation is ISOTOP, which is mechanically compatible with the miniBLOC family for chassis mount applications.

All three devices maintain identical operating temperature range (-55°C to 150°C), regulatory compliance status, and moisture sensitivity classification.

Frequently Asked Questions (FAQ)

Q: Can the APT50M65JLL replace the IXFN80N50P in all applications?

A: The APT50M65JLL is a suitable substitute only for applications where the continuous drain current requirement does not exceed 58A. The APT50M65JLL has lower maximum power dissipation (520W versus 700W). Applications requiring the full 66A rating or 700W dissipation must use the IXFN80N50P or verify that reduced current and power ratings are acceptable for the specific circuit design.

Q: What are the switching performance differences between these devices?

A: The APT50M65JLL exhibits significantly lower gate charge (141 nC) and input capacitance (7010 pF) compared to the IXFN80N50P (195 nC and 12700 pF respectively), enabling faster switching transitions. The STE53NC50 exhibits higher gate charge (434 nC), resulting in slower switching characteristics. Gate drive circuit design and switching frequency requirements determine whether these differences are acceptable for a given application.

Q: Are all three devices compatible with the same PCB footprint?

A: The IXFN80N50P and APT50M65JLL both use the SOT-227-4/miniBLOC package designation and are mechanically compatible. The STE53NC50 uses the ISOTOP package designation, which is also a chassis mount configuration compatible with the miniBLOC family. Physical verification of mounting hole spacing and thermal interface requirements is necessary before PCB layout finalization.

Q: What is the impact of on-state resistance differences?

A: The IXFN80N50P and APT50M65JLL both specify 65 mOhm maximum on-state resistance at 10V gate drive. The STE53NC50 specifies 80 mOhm maximum, resulting in approximately 23% higher conduction losses at equivalent current levels. Applications with high continuous current operation or strict thermal budgets should account for this difference in power dissipation calculations.

Q: Do all three devices require identical gate drive voltage?

A: All three devices specify 10V as the drive voltage for maximum on-state resistance specification. All three devices specify ±30V maximum gate voltage. Gate drive circuits designed for the IXFN80N50P are directly compatible with the APT50M65JLL and STE53NC50 without modification.

Q: What regulatory and compliance considerations apply to substitution?

A: All three devices are Active product status, RoHS3 compliant, REACH unaffected, and classified as MSL 1 (Unlimited moisture sensitivity). No regulatory or compliance barriers exist for substitution among these three devices. Procurement and supply chain considerations may favor one manufacturer over another based on inventory availability and lead time.

Q: How do thermal characteristics compare between these devices?

A: The IXFN80N50P has the highest maximum power dissipation rating (700W), followed by APT50M65JLL (520W) and STE53NC50 (460W). All three devices operate across the identical temperature range (-55°C to 150°C junction temperature). Thermal interface design and heatsink requirements must be verified based on the specific power dissipation expected in the application circuit.