IXFN80N50 Equivalent & Substitute Parts

Part Overview

The IXFN80N50 is an N-Channel MOSFET manufactured by IXYS, rated for 500V drain-to-source voltage with 66A continuous drain current at 25°C. This device operates in the HiPerFET™ series and is housed in a SOT-227B (miniBLOC) chassis-mount package. The part is Active in product status with 1405 units currently in stock.

Equivalent and substitute parts are identified when applications require alternative sourcing due to inventory constraints, supply chain considerations, or when design specifications permit operation within the electrical and mechanical parameter ranges of alternative devices. The IXFN80N50 can be substituted with devices that maintain compatibility across critical electrical parameters including drain-to-source voltage rating, continuous drain current capability, gate charge characteristics, and thermal performance within the specified operating temperature range.

Substiute Parts

IXFN80N50

IXYSIn Stock: 1486IXFN80N50 Datasheet

Current PartRFQ

STE53NC50

STMicroelectronicsIn Stock: 3551STE53NC50 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFN80N50 is determined by strict alignment of the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: The substitute device must maintain a Drain to Source Voltage (Vdss) rating of 500V to ensure safe operation within the same voltage class.

Current Capability: The substitute device must support continuous drain current (Id) at 25°C sufficient for the application. The IXFN80N50 operates at 66A (Tc); substitute devices with lower current ratings require application-level verification of thermal and electrical load conditions.

On-State Resistance (Rds On): The substitute device's maximum on-state resistance directly affects power dissipation and thermal performance. Devices with higher Rds On values will generate increased heat and may require thermal management adjustments.

Gate Charge (Qg): Gate charge affects switching speed and driver circuit requirements. Substitute devices with significantly different gate charge values may impact circuit performance and switching losses.

Power Dissipation Rating: The substitute device must support the thermal load of the application. The IXFN80N50 is rated for 700W (Tc); substitute devices with lower power dissipation ratings require thermal analysis.

Package and Mounting: The substitute device must be compatible with the chassis-mount requirement and PCB layout constraints. Package type changes may require design modifications.

Operating Temperature Range: The substitute device must support the full operating temperature range of -55°C to 150°C (TJ) or the specific range required by the application.

The STE53NC50 from STMicroelectronics qualifies as a substitute based on matching voltage rating (500V), compatible current capability (53A), and equivalent operating temperature support, with documented differences in on-state resistance, gate charge, and power dissipation that must be evaluated within specific application requirements.

Parameter Comparison

Engineering Selection Recommendations

Primary Selection (IXFN80N50): The IXFN80N50 remains the primary choice for applications requiring 66A continuous drain current at 500V with 700W power dissipation capability. This device is Active in product status, ROHS3 compliant, and REACH unaffected. Current inventory of 1405 units supports immediate procurement.

Substitute Selection (STE53NC50): The STE53NC50 qualifies as a substitute when application requirements permit operation at 53A continuous drain current (80% of primary device rating) and 460W power dissipation (66% of primary device rating). This device is also Active in product status, ROHS3 compliant, and REACH unaffected. Higher inventory availability (3500 units) supports extended supply chain flexibility.

Substitution Constraints: The STE53NC50 exhibits higher on-state resistance (80 mOhm versus 55 mOhm), resulting in increased power dissipation per unit current. The higher gate charge (434 nC versus 380 nC) may increase switching losses in high-frequency applications. The different package type (ISOTOP® versus SOT-227B) requires PCB layout and thermal management reassessment. These differences necessitate application-level thermal and electrical analysis before substitution.

Compliance Basis: Both devices maintain equivalent regulatory compliance across RoHS3 and REACH requirements, supporting substitution from a regulatory standpoint.

Frequently Asked Questions (FAQ)

Q: Can the STE53NC50 directly replace the IXFN80N50 in my circuit?

A: Direct replacement requires verification that your application operates within the STE53NC50 electrical specifications. The lower continuous drain current rating (53A versus 66A) and reduced power dissipation capability (460W versus 700W) must be compatible with your circuit's thermal and electrical load. The different package type (ISOTOP® versus SOT-227B) requires PCB layout evaluation.

Q: What is the primary difference between these two devices?

A: The IXFN80N50 provides higher current capability (66A versus 53A) and superior power dissipation rating (700W versus 460W). The STE53NC50 exhibits higher on-state resistance (80 mOhm versus 55 mOhm) and higher gate charge (434 nC versus 380 nC). Both devices maintain identical 500V voltage rating and -55°C to 150°C operating temperature range.

Q: Are there package compatibility issues between these devices?

A: Yes. The IXFN80N50 uses SOT-227B (miniBLOC) packaging, while the STE53NC50 uses ISOTOP® packaging. These packages have different pinout configurations, thermal characteristics, and PCB footprints. Physical substitution requires PCB redesign and thermal management reassessment.

Q: How does the higher on-state resistance of the STE53NC50 affect my application?

A: Higher on-state resistance (80 mOhm versus 55 mOhm) increases power dissipation at the same current level. At 27A, the STE53NC50 dissipates approximately 45% more power than the IXFN80N50 at equivalent current. This requires thermal analysis to ensure adequate heat dissipation within your system design.

Q: Do both devices support the same gate drive voltage?

A: Both devices specify 10V as the drive voltage for maximum on-state resistance specification. The STE53NC50 supports a higher maximum gate-source voltage (±30V versus ±20V), providing additional gate drive margin. Gate threshold voltages differ slightly (4V versus 4.5V), which may affect switching characteristics.

Q: What is the significance of the different gate charge values?

A: Gate charge (Qg) affects switching speed and driver circuit power requirements. The STE53NC50 requires 434 nC versus 380 nC for the IXFN80N50. Higher gate charge increases switching losses in high-frequency applications and may require driver circuit adjustments to maintain switching performance.

Q: Are both devices RoHS and REACH compliant?

A: Yes. Both the IXFN80N50 and STE53NC50 are ROHS3 compliant and REACH unaffected, supporting equivalent regulatory compliance for substitution purposes.

Q: Which device should I select for new designs?

A: For new designs, select based on application current and power dissipation requirements. If your application requires 66A continuous current and 700W power dissipation capability, the IXFN80N50 is the appropriate choice. If your application operates at 53A or lower with thermal requirements below 460W, the STE53NC50 is suitable. Both devices are Active in product status and support long-term availability.