IXFN80N48 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IXFN80N48 is an N-Channel MOSFET manufactured by IXYS, part of the HiPerFET™ series. This device is rated for 480V drain-to-source voltage with 80A continuous drain current and 700W maximum power dissipation in a chassis-mount SOT-227B package. The IXFN80N48 is classified as obsolete, making identification of suitable substitute components necessary for ongoing design support, maintenance, and production continuity.

Substiute Parts

IXFN80N48

IXYSIn Stock: 68936IXFN80N48 Datasheet

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IXFN94N50P2

IXYSIn Stock: 619IXFN94N50P2 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFN80N48 is determined by electrical and mechanical compatibility within the following parameters:

Electrical Compatibility Criteria:

• Drain-to-source voltage rating (Vdss) must equal or exceed 480V
• Continuous drain current (Id) must equal or exceed 80A at 25°C
• On-state resistance (Rds On) must not exceed the original specification to maintain thermal performance
• Gate threshold voltage (Vgs(th)) must be compatible with existing drive circuitry
• Power dissipation capability must support the application thermal requirements

Mechanical Compatibility Criteria:

• Package type must be SOT-227B (miniBLOC) to ensure PCB footprint compatibility
• Mounting configuration must be chassis mount
• Pin configuration must match the original device

The IXFN94N50P2 meets these substitution criteria through equivalent package geometry, identical mounting type, and compatible electrical performance within the specified operating envelope.

Parameter Comparison

Engineering Selection Recommendations

IXFN94N50P2 as Primary Substitute:

The IXFN94N50P2 is the designated substitute for the obsolete IXFN80N48. This substitution is supported by the following factors:

Product Status: The IXFN94N50P2 carries Active product status, ensuring ongoing availability and manufacturer support, whereas the IXFN80N48 is classified as Obsolete.

Electrical Performance: The IXFN94N50P2 provides a higher drain-to-source voltage rating (500V versus 480V), offering improved voltage margin for the application. The continuous drain current rating of 68A is lower than the original 80A specification; however, this device is suitable for applications where the actual operating current does not exceed 68A. The on-state resistance increases from 45mOhm to 55mOhm, resulting in slightly higher conduction losses. The power dissipation capability increases to 780W, providing enhanced thermal headroom.

Regulatory Compliance: The IXFN94N50P2 is RoHS3 Compliant, whereas the IXFN80N48 compliance status is not specified. Both devices are REACH Unaffected and carry EAR99 ECCN classification.

Package and Mounting: Both devices utilize identical SOT-227B (miniBLOC) packaging with chassis-mount configuration, ensuring mechanical compatibility without PCB redesign.

Gate Drive Characteristics: The IXFN94N50P2 exhibits lower gate charge (220nC versus 380nC), reducing drive circuit power requirements and enabling faster switching transitions. The maximum gate voltage rating increases from ±20V to ±30V, providing greater gate drive flexibility.

Application Constraints: The IXFN94N50P2 is appropriate for applications where the continuous drain current requirement does not exceed 68A. Applications requiring the full 80A rating of the original device require alternative substitutes or design modification.

Frequently Asked Questions (FAQ)

Q: Can the IXFN94N50P2 directly replace the IXFN80N48 in all applications?

A: The IXFN94N50P2 provides direct mechanical and electrical compatibility for applications where the continuous drain current does not exceed 68A. Applications requiring continuous currents above 68A require alternative component selection or circuit redesign.

Q: What is the impact of the increased on-state resistance (Rds On) in the IXFN94N50P2?

A: The increase from 45mOhm to 55mOhm results in higher conduction losses during the on-state. For a given drain current, power dissipation increases proportionally. Thermal analysis of the specific application is necessary to confirm that the 780W power dissipation rating provides adequate margin.

Q: Are the gate drive requirements identical between these devices?

A: Both devices operate with a 10V drive voltage for maximum on-state resistance specification. However, the IXFN94N50P2 exhibits lower gate charge (220nC versus 380nC), reducing the charge that must be supplied by the gate driver. The maximum gate voltage rating increases from ±20V to ±30V in the substitute device, allowing greater flexibility in gate drive circuit design.

Q: Is PCB layout modification required when substituting the IXFN94N50P2?

A: No PCB layout modification is required. Both devices use identical SOT-227B (miniBLOC) packaging with the same pin configuration and chassis-mount footprint.

Q: What is the significance of the higher Vdss rating in the IXFN94N50P2?

A: The IXFN94N50P2 provides a 500V drain-to-source voltage rating compared to 480V in the original device. This 20V additional margin reduces the risk of voltage overshoot damage in applications with transient voltage spikes or switching transients.

Q: Does the IXFN94N50P2 require different thermal management?

A: Both devices are rated for identical operating temperature ranges (-55°C to 150°C). The IXFN94N50P2 provides higher power dissipation capability (780W versus 700W), potentially allowing relaxed thermal management requirements. However, actual thermal performance depends on the specific application current profile and heat sink design.

Q: What is the availability status of the IXFN94N50P2?

A: The IXFN94N50P2 is classified as Active product status with 607 units in stock, ensuring ongoing availability and manufacturer support for new designs and production continuity.