IXFN70N60Q2 N-Channel MOSFET 600V 70A Equivalent & Substitute Parts

Part Overview

The IXFN70N60Q2 is an N-Channel MOSFET manufactured by IXYS, rated for 600V drain-to-source voltage and 70A continuous drain current at 25°C. This device is housed in a SOT-227B (miniBLOC) chassis mount package and is part of the HiPerFET™ Q2 Class series. The part is classified as "Not For New Designs," indicating it has been superseded in the product lifecycle. Identifying equivalent and substitute parts is necessary for applications requiring continued support, design flexibility, or inventory optimization while maintaining electrical and mechanical compatibility.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	70	A (Tc)
On-State Resistance (Rds On Max) @ 35A, 10V	80	mOhm
Gate Threshold Voltage (Vgs(th)) @ 8mA	5	V
Gate Charge (Qg) @ 10V	265	nC
Power Dissipation (Max)	890	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	SOT-227B (miniBLOC)	Chassis Mount
RoHS Status	ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the IXFN70N60Q2 is determined by the following critical parameters:

Primary Compatibility Criteria:

Drain-to-Source Voltage (Vdss): Substitute parts must equal or exceed 600V
Continuous Drain Current (Id): Substitute parts must meet or exceed 70A at 25°C
Package Type: SOT-227B (miniBLOC) chassis mount configuration
Operating Temperature Range: -55°C to 150°C (TJ)
Gate Drive Voltage: 10V maximum Rds On specification

Secondary Compatibility Factors:

On-State Resistance (Rds On): Lower values indicate improved performance
Gate Charge (Qg): Lower values reduce switching losses
Power Dissipation Capability: Minimum 890W at case temperature

Substitute parts are grouped into two categories:

Category A - Direct Voltage/Current Match (600V, ≥70A): Parts maintaining the same 600V rating with equal or higher current ratings and compatible package configurations.

Category B - Enhanced Voltage Rating (≥600V, ≥70A): Parts with higher voltage ratings (650V) and higher current ratings, providing design margin while maintaining mechanical and electrical compatibility.

Parameter Comparison

Parameter	IXFN70N60Q2	IXFN80N60P3	IXFN82N60P	IXFN100N65X2	APT40N60JCU3	APT60M75JVR	STE40NC60
Manufacturer	IXYS	IXYS	IXYS	IXYS	Microchip	Microchip	STMicroelectronics
Vdss (V)	600	600	600	650	600	600	600
Id @ 25°C (A)	70	66	72	78	40	62	40
Rds On Max (mOhm)	80 @ 35A	70 @ 40A	75 @ 41A	30 @ 50A	70 @ 20A	75 @ 500mA	130 @ 20A
Vgs(th) (V)	5 @ 8mA	5 @ 8mA	5 @ 8mA	5 @ 4mA	3.9 @ 1mA	4 @ 5mA	4 @ 250µA
Qg @ 10V (nC)	265	190	240	183	259	1050	430
Ciss @ 25V (pF)	7200	13100	23000	10800	7015	19800	11100
Power Dissipation Max (W)	890	960	1040	595	290	700	460
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	SOT-227B	SOT-227B	SOT-227B	SOT-227B	SOT-227	ISOTOP®	ISOTOP®
Product Status	Not For New Designs	Active	Active	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Recommended Substitutes for Direct Replacement:

IXFN80N60P3 (IXYS) and IXFN82N60P (IXYS) are the primary substitutes for the IXFN70N60Q2. Both parts maintain the 600V Vdss rating, exceed the 70A continuous drain current requirement (66A and 72A respectively), and are housed in the same SOT-227B package. Both are classified as Active products, ensuring continued availability and support. IXFN82N60P offers the closest current rating match at 72A and provides higher power dissipation capability (1040W vs. 890W). IXFN80N60P3 delivers improved on-state resistance (70mOhm vs. 80mOhm) and lower gate charge (190nC vs. 265nC), resulting in reduced switching losses.

IXFN100N65X2 (IXYS) provides an enhanced-voltage alternative with 650V Vdss and 78A continuous drain current. This part is suitable for applications requiring additional voltage margin. The significantly lower on-state resistance (30mOhm vs. 80mOhm) and reduced gate charge (183nC vs. 265nC) improve efficiency. The part is Active and ROHS3 compliant.

Alternative Substitutes with Package Considerations:

APT40N60JCU3 (Microchip Technology) is rated for 40A continuous drain current, which is below the IXFN70N60Q2 specification of 70A. This part is suitable only for applications with reduced current requirements. The package designation is SOT-227 (compatible with SOT-227B footprint). The part is Active and ROHS3 compliant.

APT60M75JVR (Microchip Technology) is rated for 62A continuous drain current and uses an ISOTOP® package instead of SOT-227B. This represents a package change and is suitable only for designs that can accommodate the ISOTOP® form factor. The part is Active and ROHS3 compliant.

STE40NC60 (STMicroelectronics) is rated for 40A continuous drain current and uses an ISOTOP® package. This part is below the current requirement and represents a package change. The part is Active and ROHS3 compliant.

Selection Criteria Summary:

For applications requiring the closest electrical and mechanical match, select IXFN82N60P or IXFN80N60P3. For applications requiring enhanced voltage margin, select IXFN100N65X2. All recommended primary substitutes are Active products with ROHS3 compliance, ensuring long-term availability and regulatory compliance. Parts with lower current ratings (APT40N60JCU3, STE40NC60) or different packages (APT60M75JVR, STE40NC60) require design verification and are suitable only for specific application requirements.

Frequently Asked Questions (FAQ)

Q: Can IXFN80N60P3 be used as a direct replacement for IXFN70N60Q2?

A: Yes. IXFN80N60P3 meets all critical substitution criteria: 600V Vdss rating, 66A continuous drain current (exceeds 70A requirement), SOT-227B package compatibility, and -55°C to 150°C operating temperature range. The part is Active and ROHS3 compliant. The lower on-state resistance (70mOhm vs. 80mOhm) and reduced gate charge (190nC vs. 265nC) provide improved performance characteristics.

Q: What is the difference between IXFN82N60P and IXFN80N60P3?

A: Both parts are suitable substitutes for IXFN70N60Q2. IXFN82N60P offers 72A continuous drain current (closer to the original 70A) and higher power dissipation (1040W vs. 960W). IXFN80N60P3 provides lower on-state resistance (70mOhm vs. 75mOhm) and reduced gate charge (190nC vs. 240nC), resulting in lower switching losses. Selection depends on whether the application prioritizes current capacity or switching efficiency.

Q: Why is IXFN100N65X2 listed as a substitute if it has a different voltage rating?

A: IXFN100N65X2 is a valid substitute because it exceeds the minimum electrical requirements: 650V Vdss (higher than 600V requirement), 78A continuous drain current (higher than 70A requirement), and SOT-227B package compatibility. The higher voltage rating provides additional design margin for transient overvoltage conditions. This part is suitable for applications where enhanced voltage capability is beneficial.

Q: Can APT40N60JCU3 replace IXFN70N60Q2?

A: APT40N60JCU3 is not a suitable direct replacement because it is rated for only 40A continuous drain current, which is below the IXFN70N60Q2 specification of 70A. This part is suitable only for applications with reduced current requirements. The SOT-227 package is mechanically compatible with SOT-227B footprints.

Q: What is the significance of the ISOTOP® package used in APT60M75JVR and STE40NC60?

A: ISOTOP® is a different package form factor from SOT-227B. While both are chassis mount packages, they have different mechanical dimensions and thermal characteristics. Substitution with ISOTOP® packages requires design verification to confirm PCB layout compatibility, mounting hardware compatibility, and thermal performance. These parts are suitable only for designs that can accommodate the ISOTOP® form factor.

Q: Why is IXFN70N60Q2 marked as "Not For New Designs"?

A: "Not For New Designs" indicates that IXYS has superseded this part in their product lifecycle. The part remains available for existing applications and legacy support, but new designs should utilize active alternatives such as IXFN80N60P3, IXFN82N60P, or IXFN100N65X2. All recommended substitutes are classified as Active products.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed in this reference are ROHS3 compliant, matching the compliance status of the IXFN70N60Q2. This ensures regulatory compliance for applications subject to RoHS requirements.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Lower gate charge reduces switching losses and allows faster switching speeds. IXFN100N65X2 (183nC) and IXFN80N60P3 (190nC) have lower gate charge than IXFN70N60Q2 (265nC), resulting in improved switching efficiency. Parts with significantly higher gate charge, such as APT60M75JVR (1050nC) and STE40NC60 (430nC), require higher gate drive energy and are suitable for different circuit topologies.

Q: What is the impact of on-state resistance (Rds On) on thermal performance?

A: On-state resistance directly affects conduction losses and heat generation. Lower Rds On values reduce power dissipation during conduction. IXFN100N65X2 (30mOhm) provides significantly lower conduction losses compared to IXFN70N60Q2 (80mOhm). For applications with high continuous current, lower Rds On values reduce thermal stress and improve reliability. Selection should consider both switching losses (gate charge) and conduction losses (Rds On) for overall efficiency optimization.

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