IXFN64N50P N-Channel 500V 61A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFN64N50P is an N-Channel MOSFET manufactured by IXYS, rated for 500V drain-to-source voltage with 61A continuous drain current at 25°C. This device operates in the HiPerFET™ series and is housed in a SOT-227B chassis mount package. The part is Active in product status with full RoHS3 compliance and unlimited moisture sensitivity rating.

Equivalent and substitute parts are identified based on matching or exceeding critical electrical parameters including drain-to-source voltage rating, continuous drain current capability, on-state resistance characteristics, and compatible chassis mount packaging. Substitution becomes necessary when the primary part experiences supply constraints, extended lead times, or when design flexibility permits selection from alternative manufacturers meeting the same electrical specifications.

Substiute Parts

IXFN64N50P

IXYSIn Stock: 68936IXFN64N50P Datasheet

Current PartRFQ

STE53NC50

STMicroelectronicsIn Stock: 3551STE53NC50 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFN64N50P is determined by the following critical electrical parameters:

Voltage Rating Requirement: The substitute must maintain a minimum Drain-to-Source Voltage (Vdss) of 500V to ensure equivalent or superior voltage withstand capability in the application circuit.

Current Capability Requirement: The substitute must support a continuous drain current (Id) at 25°C that meets or exceeds 61A to handle the same load conditions without thermal derating.

On-State Resistance (Rds On): The substitute must demonstrate comparable or lower on-state resistance to maintain similar conduction losses and thermal performance. The reference specification is 85mOhm maximum at 32A and 10V gate drive.

Gate Charge (Qg): The substitute gate charge must be evaluated for switching speed and drive circuit compatibility. The reference specification is 150nC maximum at 10V.

Power Dissipation: The substitute must support a power dissipation rating of 460W or higher to accommodate thermal management requirements in chassis mount applications.

Package and Mounting: The substitute must utilize a chassis mount package (SOT-227B or ISOTOP®) to ensure mechanical and thermal interface compatibility with the application.

Compliance and Status: The substitute must maintain Active product status and RoHS3 compliance to ensure long-term availability and regulatory alignment.

Parameter Comparison

Engineering Selection Recommendations

Primary Part Selection (IXFN64N50P): The IXFN64N50P remains the preferred selection when supply availability permits. This device offers the highest continuous drain current rating (61A) and maximum power dissipation capability (700W), providing the greatest thermal margin in high-current applications. The lower gate charge (150nC) facilitates faster switching transitions with reduced drive circuit stress. Active product status and full RoHS3 compliance ensure long-term availability and regulatory compliance.

Substitute Selection (STE53NC50): The STE53NC50 from STMicroelectronics serves as a functional equivalent when the IXFN64N50P is unavailable. This device maintains the identical 500V voltage rating and provides 53A continuous drain current, representing an 87% current capability relative to the primary part. The on-state resistance is superior (80mOhm versus 85mOhm), resulting in lower conduction losses at comparable current levels. However, the power dissipation rating is reduced to 460W, requiring thermal design verification in applications approaching the 700W dissipation limit of the primary part. The higher gate charge (434nC) and input capacitance (11200pF) necessitate evaluation of gate drive circuit performance to ensure adequate switching speed.

Both parts maintain Active product status, RoHS3 compliance, and unlimited moisture sensitivity rating, ensuring regulatory and supply chain continuity.

Frequently Asked Questions (FAQ)

Q: Can the STE53NC50 directly replace the IXFN64N50P in all applications?

A: The STE53NC50 is electrically compatible for applications where continuous drain current does not exceed 53A and power dissipation remains below 460W. The identical 500V voltage rating ensures voltage compatibility. Applications requiring the full 61A current capability or 700W power dissipation of the IXFN64N50P require thermal and current analysis before substitution.

Q: What is the impact of the higher gate charge in the STE53NC50?

A: The STE53NC50 exhibits 434nC gate charge compared to 150nC in the IXFN64N50P. This increased gate charge extends the switching transition time and increases the energy required from the gate drive circuit. Gate drive circuits must be evaluated to confirm adequate current sourcing capability at the intended switching frequency.

Q: Are the package types interchangeable?

A: The IXFN64N50P uses SOT-227B (miniBLOC) packaging while the STE53NC50 uses ISOTOP® packaging. Both are chassis mount configurations with similar thermal interface characteristics. Physical mounting dimensions and thermal interface specifications must be verified against the application PCB layout and heatsink design before substitution.

Q: What is the significance of the lower operating temperature maximum in the STE53NC50?

A: The STE53NC50 specifies a maximum junction temperature of 150°C, while the IXFN64N50P also specifies 150°C. Both devices share identical maximum operating temperature ratings, ensuring thermal compatibility across the specified operating range.

Q: How does the lower on-state resistance of the STE53NC50 affect application performance?

A: The STE53NC50 exhibits 80mOhm on-state resistance at 27A compared to 85mOhm at 32A in the IXFN64N50P. The lower resistance reduces conduction losses and heat generation at equivalent current levels, potentially improving overall system efficiency. However, this advantage is offset by the reduced maximum current rating and power dissipation capability.

Q: Are both parts suitable for high-frequency switching applications?

A: The IXFN64N50P with lower gate charge (150nC) is better suited for high-frequency switching applications, enabling faster transitions and reduced switching losses. The STE53NC50 with higher gate charge (434nC) is suitable for moderate-frequency applications where gate drive circuit complexity and switching losses are less critical.