IXFN60N80P Equivalent & Substitute Parts

Part Overview

The IXFN60N80P is an N-Channel MOSFET manufactured by IXYS, rated for 800V drain-to-source voltage with 53A continuous drain current at 25°C. This device operates in the HiPerFET™ series and is housed in a SOT-227B (miniBLOC) chassis mount package. The part is Active in product status and fully compliant with RoHS3 and REACH regulations.

Substitute parts are identified when equivalent electrical performance and mechanical compatibility are maintained across critical parameters including voltage rating, current capacity, on-resistance characteristics, and thermal specifications. Alternative sources ensure design flexibility and supply chain continuity for applications requiring high-voltage, high-current switching functionality.

Substiute Parts

IXFN60N80P

IXYSIn Stock: 1277IXFN60N80P Datasheet

Current PartRFQ

APT53F80J

Microchip TechnologyIn Stock: 951APT53F80J Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IXFN60N80P is determined by strict equivalence across the following critical parameters:

Voltage Rating: Both main and substitute parts must maintain 800V Vdss to ensure safe operation in identical circuit topologies without derating.

Current Capacity: Continuous drain current must meet or exceed 53A at 25°C to support equivalent load switching without thermal stress.

On-Resistance Characteristics: Rds On values determine power dissipation and thermal performance. Substitute parts with lower Rds On values provide improved efficiency; higher values are not acceptable as they increase losses beyond the thermal design margin.

Gate Charge: Gate charge affects switching speed and driver requirements. Substitute parts with comparable Qg values ensure compatible gate drive circuits.

Thermal Specifications: Maximum power dissipation and operating temperature range must support the same thermal environment and duty cycle.

Package Compatibility: Both parts utilize SOT-227-4 (miniBLOC) chassis mount configuration, ensuring mechanical and thermal interface compatibility.

Regulatory Compliance: Both parts maintain RoHS3 and REACH compliance, meeting environmental and safety standards.

Parameter Comparison

Engineering Selection Recommendations

IXFN60N80P (Primary Part): This IXYS device is Active in product status with 1211 units in stock. It provides the baseline specification for 800V, 53A applications with established thermal and electrical performance characteristics. The HiPerFET™ series designation indicates optimized switching performance for high-voltage applications.

APT53F80J (Substitute Part): The Microchip Technology APT53F80J is an Active product with 890 units in stock. This substitute offers superior electrical performance with 57A continuous drain current (7.5% higher than the main part) and significantly lower on-resistance of 110 mOhm compared to 140 mOhm. The lower Rds On reduces power dissipation and improves thermal efficiency. Both parts maintain identical voltage ratings, operating temperature ranges, and regulatory compliance (RoHS3, REACH).

The APT53F80J is suitable for direct substitution in applications where the improved current capacity and reduced on-resistance provide design margin benefits. Both parts are housed in compatible SOT-227-4 (miniBLOC) chassis mount packages with equivalent thermal interfaces.

Frequently Asked Questions (FAQ)

Q: Can the APT53F80J replace the IXFN60N80P in existing designs?

A: Yes. Both devices maintain 800V Vdss rating, support the required 53A continuous drain current (APT53F80J rated for 57A), operate across -55°C to 150°C, and use compatible SOT-227-4 (miniBLOC) chassis mount packages. The APT53F80J provides improved on-resistance (110 mOhm vs. 140 mOhm), reducing power dissipation. Gate charge differs (570 nC vs. 250 nC), requiring verification of gate driver capability for the higher charge requirement.

Q: What are the key differences between these parts?

A: The primary differences are: (1) Continuous drain current: APT53F80J rated 57A versus IXFN60N80P at 53A; (2) On-resistance: APT53F80J 110 mOhm versus IXFN60N80P 140 mOhm, resulting in lower power dissipation; (3) Gate charge: APT53F80J 570 nC versus IXFN60N80P 250 nC, affecting switching speed and gate drive requirements; (4) Manufacturer series: HiPerFET™ (IXYS) versus POWER MOS 8™ (Microchip).

Q: Are the package types identical?

A: Both parts use SOT-227-4 (miniBLOC) chassis mount configuration. The IXFN60N80P specifies SOT-227B packaging, while the APT53F80J uses ISOTOP® designation. Both are mechanically and thermally compatible miniBLOC packages suitable for identical PCB layouts and thermal management interfaces.

Q: What compliance certifications apply to both parts?

A: Both the IXFN60N80P and APT53F80J are RoHS3 Compliant and REACH Unaffected. Both carry Moisture Sensitivity Level (MSL) 1 (Unlimited), indicating no moisture sensitivity constraints. Both are classified under ECCN EAR99 and HTSUS 8541.29.0095.

Q: How does the higher gate charge of the APT53F80J affect circuit design?

A: The APT53F80J gate charge of 570 nC (versus 250 nC for IXFN60N80P) requires higher gate drive current or longer switching times. Gate driver circuits must supply sufficient current to charge the gate within the required switching frequency. Verify that existing gate driver circuits can deliver the additional charge without exceeding maximum gate voltage (±30V for both parts) or introducing unacceptable switching delays.

Q: What is the thermal performance difference between these parts?

A: The IXFN60N80P is rated for 1040W maximum power dissipation, while the APT53F80J is rated for 960W. However, the APT53F80J's lower on-resistance (110 mOhm vs. 140 mOhm) typically results in lower actual power dissipation at equivalent current levels, offsetting the lower maximum rating. Thermal performance depends on specific operating current, duty cycle, and heat sink design.