IXFN60N60 N-Channel 600V 60A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFN60N60 is an N-Channel 600V 60A MOSFET manufactured by IXYS in the HiPerFET™ series, housed in a SOT-227B chassis mount package. This device is classified as obsolete, necessitating identification of active equivalent and substitute components for ongoing design requirements and procurement needs. The part delivers 700W maximum power dissipation and operates across the temperature range of -55°C to 150°C (TJ).

Substiute Parts

IXFN60N60

IXYSIn Stock: 68792IXFN60N60 Datasheet

Current PartRFQ

IXFN82N60P

IXYSIn Stock: 3074IXFN82N60P Datasheet

DirectRFQ

APT47F60J

Microchip TechnologyIn Stock: 1048APT47F60J Datasheet

SimilarRFQ

APT60M75JFLL

Microchip TechnologyIn Stock: 919APT60M75JFLL Datasheet

SimilarRFQ

APT60M75JLL

Microchip TechnologyIn Stock: 705APT60M75JLL Datasheet

SimilarRFQ

APT60M75JVR

Microchip TechnologyIn Stock: 758APT60M75JVR Datasheet

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STE40NC60

STMicroelectronicsIn Stock: 997STE40NC60 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFN60N60 is determined by strict alignment of the following electrical and mechanical parameters:

Critical Matching Parameters:

• Drain to Source Voltage (Vdss): 600V minimum
• Continuous Drain Current (Id): 60A or greater at 25°C
• On-State Resistance (Rds On): 75 mOhm or lower at specified gate voltage
• Gate Drive Voltage: 10V
• Mounting Type: Chassis Mount
• Package compatibility: SOT-227-4 or ISOTOP® (both miniBLOC form factors)
• Operating Temperature Range: -55°C to 150°C minimum

Substitution Categories:

Direct Upgrade (Higher Performance, Same Voltage Class): The IXFN82N60P maintains identical voltage rating and package form factor while providing increased current capacity (72A) and power dissipation (1040W). This part is active and RoHS3 compliant.

Functional Equivalents (Microchip Technology ISOTOP® Series): The APT47F60J, APT60M75JLL, APT60M75JFLL, and APT60M75JVR all operate at 600V with drain currents ranging from 49A to 62A. These parts use the ISOTOP® package variant, which is mechanically compatible with SOT-227-4 miniBLOC specifications. All are active products with RoHS3 compliance.

Lower Current Alternative (STMicroelectronics): The STE40NC60 provides 600V operation at 40A continuous drain current. This part is suitable for applications where the full 60A capacity is not required. It is active and RoHS3 compliant.

Parameter Comparison

Engineering Selection Recommendations

Primary Recommendation: IXFN82N60P

The IXFN82N60P is the preferred direct substitute for the obsolete IXFN60N60. Both parts are manufactured by IXYS within the HiPerFET™ series and share identical voltage ratings (600V) and package specifications (SOT-227B). The IXFN82N60P provides enhanced performance with 72A continuous drain current versus 60A, increased power dissipation capability (1040W versus 700W), and reduced gate charge (240 nC versus 380 nC). The part is currently active with full RoHS3 compliance and unlimited moisture sensitivity rating (MSL 1).

Secondary Recommendations: Microchip Technology ISOTOP® Series

The APT60M75JVR offers the closest electrical match to the IXFN60N60, delivering 62A continuous drain current and 700W power dissipation with identical on-state resistance (75 mOhm). This part is active, RoHS3 compliant, and uses the ISOTOP® package variant, which is mechanically compatible with SOT-227-4 miniBLOC specifications. The APT60M75JVR is suitable for direct substitution in applications where package form factor flexibility is acceptable.

The APT60M75JLL and APT60M75JFLL provide 58A continuous drain current and 595W power dissipation, both with 75 mOhm on-state resistance. These parts are active and RoHS3 compliant, offering suitable alternatives for applications with slightly reduced current requirements.

The APT47F60J delivers 49A continuous drain current and 540W power dissipation. This part is active and RoHS3 compliant, suitable for applications where the full 60A capacity is not required.

Alternative for Reduced Current Applications: STE40NC60

The STE40NC60 from STMicroelectronics is an active, RoHS3-compliant alternative for applications requiring only 40A continuous drain current. This part operates at 600V with 460W power dissipation and uses the ISOTOP® package form factor.

All recommended substitutes maintain the 600V voltage rating, -55°C to 150°C operating temperature range, and 10V gate drive voltage of the original IXFN60N60.

Frequently Asked Questions (FAQ)

Q: Can the IXFN82N60P be used as a direct replacement for the IXFN60N60?

A: Yes. The IXFN82N60P is a direct substitute. Both parts are manufactured by IXYS, operate at 600V, use the SOT-227B package, and share identical gate drive voltage (10V) and on-state resistance (75 mOhm). The IXFN82N60P provides higher current capacity (72A versus 60A) and greater power dissipation (1040W versus 700W), making it suitable for the same applications with enhanced performance margin.

Q: What is the difference between SOT-227B and ISOTOP® packages?

A: Both SOT-227B and ISOTOP® are miniBLOC form factors used for chassis mount power MOSFETs. They are mechanically compatible for mounting purposes. The primary difference lies in manufacturer-specific design details and thermal characteristics. Parts using either package can be substituted provided all electrical parameters align with application requirements.

Q: Is the APT60M75JVR suitable for applications requiring 60A continuous drain current?

A: The APT60M75JVR provides 62A continuous drain current at 25°C, which exceeds the 60A requirement of the IXFN60N60. This part is suitable for such applications. However, the gate charge specification (1050 nC) is significantly higher than the IXFN60N60 (380 nC), which may affect switching speed and gate drive circuit design.

Q: Why is the STE40NC60 listed as a substitute if it only provides 40A?

A: The STE40NC60 is listed as a functional alternative for applications where the full 60A continuous drain current is not required. It maintains the 600V voltage rating and 10V gate drive voltage. Selection of this part depends on actual application current requirements and thermal design margins.

Q: Are all recommended substitutes RoHS3 compliant?

A: Yes. The IXFN82N60P and all Microchip Technology parts (APT47F60J, APT60M75JLL, APT60M75JFLL, APT60M75JVR) and the STMicroelectronics STE40NC60 are RoHS3 compliant. The original IXFN60N60 has REACH Unaffected status; all substitutes maintain REACH Unaffected status.

Q: What is the significance of gate charge (Qg) differences between substitute parts?

A: Gate charge affects the energy required to switch the MOSFET on and off. The IXFN60N60 specifies 380 nC at 10V. The IXFN82N60P reduces this to 240 nC, improving switching efficiency. The APT60M75JVR increases gate charge to 1050 nC, requiring higher gate drive current. Gate charge differences must be evaluated against gate driver circuit capabilities in the target application.

Q: Can multiple substitute parts be used interchangeably in the same design?

A: Substitutes can be used interchangeably only if the application design accommodates the electrical parameter variations listed in the Parameter Comparison table. Critical considerations include on-state resistance (Rds On), gate charge (Qg), input capacitance (Ciss), and maximum power dissipation. Gate drive circuit design and thermal management must be verified for each substitute part.

Q: What is the inventory status of substitute parts?

A: The IXFN82N60P has 2970 units in stock. Microchip Technology parts have the following inventory: APT47F60J (942 units), APT60M75JFLL (898 units), APT60M75JLL (656 units), APT60M75JVR (683 units). The STE40NC60 has 984 units in stock. Inventory levels are subject to change and should be verified at time of procurement.