IXFN55N50F N-Channel 500V 55A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFN55N50F is an N-Channel power MOSFET manufactured by IXYS, rated for 500V drain-to-source voltage and 55A continuous drain current at 25°C. This device is part of the HiPerFET™ F Class series and is housed in a SOT-227B (miniBLOC) chassis mount package. The part is currently Active in product status with RoHS3 compliance and unlimited moisture sensitivity level (MSL 1).

Equivalent and substitute parts are identified when applications require alternative sourcing due to inventory constraints, supply chain considerations, or when design specifications allow for performance variations within defined electrical and mechanical parameters. The IXFN55N50F has three qualified substitute parts: IXFN80N50Q3 (IXYS), APL502J (Microchip Technology), and STE48NM50 (STMicroelectronics).

Substiute Parts

IXFN55N50F

IXYSIn Stock: 68655IXFN55N50F Datasheet

Current PartRFQ

IXFN80N50Q3

IXYSIn Stock: 883IXFN80N50Q3 Datasheet

MFR RecommendedRFQ

APL502J

Microchip TechnologyIn Stock: 883APL502J Datasheet

MFR RecommendedRFQ

STE48NM50

STMicroelectronicsIn Stock: 1678STE48NM50 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IXFN55N50F is determined by the following critical parameters:

Primary Substitution Criteria:

• Drain-to-Source Voltage (Vdss): Minimum 500V (equal or higher)
• Continuous Drain Current (Id): Minimum 52A (within 95% of original 55A specification)
• Package Type: SOT-227B or ISOTOP® (both chassis mount configurations)
• Operating Temperature Range: -55°C to 150°C minimum
• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Compliance: RoHS3 compliant, MSL 1

Secondary Compatibility Parameters:

• Rds On (Max): Not to exceed 100 mOhm (thermal performance consideration)
• Gate Charge (Qg): Not to exceed 200 nC (switching speed consideration)
• Input Capacitance (Ciss): Not to exceed 10000 pF (gate drive consideration)
• Vgs (Max): ±20V minimum (gate voltage tolerance)

All three substitute parts meet the primary criteria. Variations in secondary parameters reflect different device series and manufacturing technologies but remain within acceptable engineering tolerances for direct substitution in applications designed for the IXFN55N50F.

Parameter Comparison

Engineering Selection Recommendations

IXFN80N50Q3 (IXYS HiPerFET™ Q3 Class)

The IXFN80N50Q3 is the primary manufacturer-recommended substitute. Both devices are IXYS products within the HiPerFET™ family, sharing identical Vdss (500V) and package configuration (SOT-227B miniBLOC). The IXFN80N50Q3 provides higher continuous drain current (63A vs. 55A) and superior power dissipation capability (780W vs. 600W). Rds On is reduced to 65 mOhm, improving thermal efficiency. Gate charge remains within specification at 200 nC. This substitute is suitable for applications where higher current capacity or thermal margin is beneficial. All compliance certifications (RoHS3, REACH Unaffected, MSL 1) are identical.

APL502J (Microchip Technology)

The APL502J is a Microchip Technology N-Channel 500V MOSFET rated for 52A continuous drain current, positioned as a direct current-class equivalent. The device maintains identical Vdss (500V) and operating temperature range. Package configuration is ISOTOP® (SOT-227-4 miniBLOC), providing mechanical compatibility with the original part. Rds On is 90 mOhm at 26A/12V, slightly higher than the IXFN55N50F. Gate threshold voltage is lower at 4V, which may affect gate drive circuit design. Input capacitance is 9000 pF. This substitute is appropriate for applications requiring cross-manufacturer sourcing with minimal current derating. All compliance requirements are met.

STE48NM50 (STMicroelectronics MDmesh™)

The STE48NM50 represents the STMicroelectronics alternative, utilizing MDmesh™ technology. Vdss is rated at 550V, providing 50V margin above the original specification. Continuous drain current is 48A, representing a 13% reduction from the IXFN55N50F. Package is ISOTOP® (chassis mount). Rds On is 100 mOhm at 24A/10V. Gate charge is significantly lower at 117 nC, enabling faster switching characteristics. Input capacitance is the lowest among substitutes at 3700 pF, reducing gate drive requirements. This substitute is suitable for applications where lower switching losses and reduced gate drive power are prioritized, with acceptance of reduced current capacity. All compliance certifications are met.

Selection Basis:

All three substitutes are Active products with RoHS3 compliance, MSL 1 rating, and REACH Unaffected status. Selection should be based on application-specific requirements: current capacity needs, thermal dissipation requirements, switching frequency, and gate drive circuit design. The IXFN80N50Q3 provides performance enhancement within the same manufacturer ecosystem. The APL502J and STE48NM50 enable multi-source supply chain strategies with defined electrical trade-offs.

Frequently Asked Questions (FAQ)

Q1: Can the IXFN80N50Q3 be used as a direct drop-in replacement for the IXFN55N50F?

A: Yes. Both devices share identical Vdss (500V), package type (SOT-227B miniBLOC), and operating temperature range (-55°C to 150°C). The IXFN80N50Q3 provides higher current capacity (63A vs. 55A) and improved Rds On (65 mOhm vs. 85 mOhm), making it a performance-enhanced substitute. Gate charge (200 nC) remains within acceptable limits. No circuit modifications are required.

Q2: What is the primary difference between the APL502J and the IXFN55N50F?

A: The APL502J is manufactured by Microchip Technology and uses ISOTOP® packaging instead of SOT-227B. Continuous drain current is rated at 52A (3A lower than the original 55A). Rds On is 90 mOhm at 26A/12V, compared to 85 mOhm at 27.5A/10V for the IXFN55N50F. Gate threshold voltage is lower at 4V. All devices maintain 500V Vdss and identical operating temperature range. The APL502J is suitable for applications where the 52A current rating is sufficient.

Q3: Why does the STE48NM50 have a lower continuous drain current (48A) than the IXFN55N50F (55A)?

A: The STE48NM50 uses STMicroelectronics' MDmesh™ technology, which prioritizes switching efficiency and reduced gate charge (117 nC vs. 195 nC). The lower current rating reflects different device optimization. The 550V Vdss rating provides additional voltage margin. This device is suitable for applications where switching losses and gate drive power consumption are critical design factors, with acceptance of reduced current capacity.

Q4: Are all substitute parts RoHS3 compliant?

A: Yes. The IXFN55N50F, IXFN80N50Q3, APL502J, and STE48NM50 are all RoHS3 compliant with MSL 1 (Unlimited) moisture sensitivity level and REACH Unaffected status. All devices meet identical environmental and regulatory requirements.

Q5: What is the impact of different Rds On values on thermal performance?

A: Rds On (on-state resistance) directly affects power dissipation during conduction. Lower Rds On values reduce I²R losses. The IXFN80N50Q3 (65 mOhm) provides the best thermal efficiency, followed by the IXFN55N50F (85 mOhm), APL502J (90 mOhm), and STE48NM50 (100 mOhm). Selection should consider application current levels and thermal management capabilities. At lower current levels, Rds On differences have minimal impact.

Q6: Can the STE48NM50 be used in applications designed for the IXFN55N50F without circuit modifications?

A: The STE48NM50 can be used as a substitute with the following considerations: (1) Continuous drain current is reduced to 48A, requiring verification that application current does not exceed this rating; (2) Vdss is 550V, providing additional voltage margin; (3) Gate charge is significantly lower (117 nC vs. 195 nC), which may reduce gate drive power consumption but requires verification of gate drive circuit compatibility; (4) Input capacitance is lower (3700 pF vs. 6700 pF), reducing gate drive requirements. No fundamental circuit modifications are required if current and gate drive specifications are compatible.

Q7: What packaging considerations apply when substituting between SOT-227B and ISOTOP® devices?

A: Both SOT-227B (miniBLOC) and ISOTOP® are chassis mount packages with identical mechanical footprints (SOT-227-4). Physical mounting and thermal interface requirements are equivalent. PCB layout and heatsink attachment are compatible. No mechanical redesign is required when substituting between these package types.

Q8: How do gate charge differences affect gate drive circuit design?

A: Gate charge (Qg) determines the total charge required to switch the device. The IXFN55N50F requires 195 nC, while the STE48NM50 requires only 117 nC. Lower gate charge reduces gate drive power consumption and switching time. Higher gate charge (IXFN80N50Q3 at 200 nC) has minimal impact on most gate drive circuits. Gate drive circuit compatibility should be verified based on driver output current capability and switching frequency requirements.

Q9: Are there any supply chain or inventory considerations for these substitutes?

A: Current inventory levels are: IXFN55N50F (68,556 pcs), IXFN80N50Q3 (859 pcs), APL502J (833 pcs), and STE48NM50 (1,591 pcs). The IXFN55N50F has significantly higher availability. Substitute selection may be driven by supply constraints or lead time requirements. All parts are listed as Active products with ongoing manufacturer support.

Q10: What is the significance of different Vgs(th) values among the substitutes?

A: Gate threshold voltage (Vgs(th)) determines the minimum gate voltage required to turn on the device. Values range from 4V (APL502J) to 6.5V (IXFN80N50Q3). These variations reflect different manufacturing processes and device optimization. Gate drive circuits must provide sufficient voltage margin above Vgs(th) to ensure full device enhancement. Differences of 1-2V are typical and do not require gate drive circuit redesign in standard applications.