IXFN55N50 Equivalent & Substitute Parts

Part Overview

The IXFN55N50 is an N-Channel 500V 55A MOSFET manufactured by IXYS in the HiPerFET™ series, housed in a SOT-227B chassis mount package. This device is classified as obsolete, indicating that direct procurement from original manufacturing channels may be limited. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain reliability, and support ongoing production requirements for applications utilizing this component.

Substiute Parts

IXFN55N50

IXYSIn Stock: 4316IXFN55N50 Datasheet

Current PartRFQ

IXFN94N50P2

IXYSIn Stock: 619IXFN94N50P2 Datasheet

DirectRFQ

APL502J

Microchip TechnologyIn Stock: 883APL502J Datasheet

SimilarRFQ

STE48NM50

STMicroelectronicsIn Stock: 1678STE48NM50 Datasheet

SimilarRFQ

STE53NC50

STMicroelectronicsIn Stock: 3551STE53NC50 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFN55N50 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

• Drain to Source Voltage (Vdss): Must equal or exceed 500V
• Continuous Drain Current (Id): Must equal or exceed 55A at 25°C
• On-State Resistance (Rds On): Must not significantly exceed 90 mOhm at rated conditions
• Gate Threshold Voltage (Vgs(th)): Must be compatible with 10V drive voltage
• Power Dissipation: Must support thermal requirements of 625W or greater
• Operating Temperature: Must support -55°C to 150°C range
• FET Type: N-Channel MOSFET technology
• Mounting: Chassis mount configuration

Package Compatibility: Substitutes may utilize alternative package designations (SOT-227B, ISOTOP®) provided they maintain chassis mount capability and thermal performance characteristics.

Four substitute parts meet these criteria with varying performance enhancements and package options.

Parameter Comparison

Engineering Selection Recommendations

IXFN94N50P2 (IXYS) This direct IXYS alternative maintains the SOT-227B package format and provides enhanced performance with 68A continuous drain current and reduced on-state resistance of 55 mOhm. The part is active in production status, ensuring long-term availability. It features lower gate charge (220 nC) compared to the original, resulting in faster switching characteristics. RoHS3 compliance and REACH unaffected status align with regulatory requirements. This substitute is optimal for applications requiring package compatibility and performance improvement within the same manufacturer ecosystem.

STE53NC50 (STMicroelectronics) This STMicroelectronics part matches the 500V voltage rating and provides 53A continuous drain current with 80 mOhm on-state resistance, closely approximating original specifications. The ISOTOP® package offers alternative thermal management characteristics. Active production status ensures supply continuity. The PowerMESH™ II series technology provides modern process implementation. RoHS3 compliance and REACH unaffected status are maintained. This substitute is suitable for applications where package transition to ISOTOP® is acceptable and performance parity with the original is required.

APL502J (Microchip Technology) This Microchip part maintains 500V voltage rating with 52A continuous drain current and 90 mOhm on-state resistance, providing electrical equivalence to the original specification. The ISOTOP® package format differs from the original SOT-227B. Active production status supports ongoing availability. RoHS3 compliance and REACH unaffected status are confirmed. This substitute is applicable for designs where package transition is feasible and electrical performance matching is prioritized.

STE48NM50 (STMicroelectronics) This STMicroelectronics part operates at 550V, exceeding the original 500V rating, with 48A continuous drain current. The 100 mOhm on-state resistance is slightly elevated compared to the original. The ISOTOP® package provides alternative thermal characteristics. Active production status ensures availability. MDmesh™ series technology represents current-generation implementation. RoHS3 compliance and REACH unaffected status are maintained. This substitute is applicable for applications where higher voltage margin is beneficial and slightly reduced current capacity is acceptable.

Frequently Asked Questions (FAQ)

Q: Can the IXFN94N50P2 directly replace the IXFN55N50 in existing designs?

A: The IXFN94N50P2 maintains the same SOT-227B package and 500V voltage rating. Electrical parameters are compatible, with improved performance characteristics (higher current rating, lower on-state resistance, reduced gate charge). PCB layout and thermal management remain compatible. Verification of gate drive circuitry compatibility with the slightly higher gate threshold voltage (5V vs. 4.5V) is required.

Q: What are the package differences between SOT-227B and ISOTOP®?

A: Both are chassis mount packages designed for high-power applications. SOT-227B (miniBLOC) and ISOTOP® differ in mechanical dimensions and mounting interface. PCB layout modifications are required when transitioning between these package types. Thermal performance characteristics differ; ISOTOP® packages typically offer enhanced thermal dissipation in certain configurations. Consult package datasheets for specific dimensional and mounting requirements.

Q: Is the STE48NM50 suitable as a substitute despite lower current rating?

A: The STE48NM50 provides 48A continuous drain current, below the original 55A specification. This part is suitable only for applications where the actual operating current does not exceed 48A. The higher voltage rating (550V vs. 500V) provides additional voltage margin. On-state resistance is slightly elevated (100 mOhm vs. 90 mOhm). Application-specific thermal and electrical analysis is required to confirm suitability.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed (IXFN94N50P2, APL502J, STE48NM50, STE53NC50) are ROHS3 compliant and REACH unaffected, matching the compliance status of the original IXFN55N50.

Q: What is the significance of gate charge differences among substitutes?

A: Gate charge (Qg) affects switching speed and gate drive power requirements. The IXFN94N50P2 has lower gate charge (220 nC) than the original (330 nC), enabling faster switching. The STE53NC50 has higher gate charge (434 nC), requiring more gate drive energy. The STE48NM50 has significantly lower gate charge (117 nC), enabling very fast switching. Gate drive circuit design must accommodate these differences to ensure stable operation.

Q: Can substitutes be used interchangeably in the same application?

A: No. Each substitute has distinct electrical and thermal characteristics. Selection must be based on specific application requirements including current rating, thermal dissipation capability, switching speed requirements, and package compatibility. Cross-verification of all critical parameters against application specifications is mandatory before implementation.

Q: What is the product status significance for long-term supply?

A: The original IXFN55N50 is classified as obsolete, indicating limited future availability. All substitute parts are active in production status, ensuring long-term supply continuity. Active status supports design transitions and ongoing production requirements without supply interruption risk.