IXFN48N50U3 Equivalent & Substitute Parts

Part Overview

The IXFN48N50U3 is an N-Channel 500V 48A power MOSFET manufactured by IXYS in the HiPerFET™ series, housed in a SOT-227B chassis mount package. This device is classified as obsolete, necessitating identification of active equivalent alternatives for new designs and production continuity. Substitute parts must maintain electrical compatibility across drain-source voltage, continuous drain current, on-resistance characteristics, and thermal performance parameters while accommodating package and mounting variations.

Substiute Parts

IXFN48N50U3
IXYSIn Stock: 1239IXFN48N50U3 Datasheet
IXFN48N50U3
Current Part
APT5010JLLU3
Microchip TechnologyIn Stock: 1088APT5010JLLU3 Datasheet
APT5010JLLU3
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STE48NM50
STMicroelectronicsIn Stock: 1678STE48NM50 Datasheet
STE48NM50
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STE53NC50
STMicroelectronicsIn Stock: 3551STE53NC50 Datasheet
STE53NC50
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Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 500 V
Continuous Drain Current (Id) @ 25°C 48 A (Tc)
On-Resistance (Rds On Max) @ 10V Vgs 100 mOhm
Gate Threshold Voltage (Vgs(th) Max) 4 V @ 8mA
Power Dissipation (Max) 520 W (Tc)
Operating Temperature Range -40 to 150 °C (TJ)
Mounting Type Chassis Mount
Package Type SOT-227B

Substitute Part Grouping Explanation

Substitution eligibility is determined by the following critical parameters:

  1. Drain-Source Voltage (Vdss): Substitute parts must equal or exceed 500V to maintain voltage blocking capability.
  2. Continuous Drain Current (Id): Substitute parts must support the required 48A continuous current or higher at 25°C.
  3. On-Resistance (Rds On): Substitute parts must not exceed 100mOhm at 10V gate drive to ensure thermal and efficiency performance equivalence.
  4. Gate Threshold Voltage (Vgs(th)): Substitute parts must maintain gate drive compatibility within specified thresholds.
  5. Mounting Type: All substitutes must be chassis mount to ensure mechanical compatibility.
  6. Technology: All substitutes must be N-Channel MOSFETs using metal oxide technology.

The three identified substitute parts meet these criteria with variations in package type (SOT-227 or ISOTOP®), current rating, and thermal characteristics. Package differences do not preclude substitution provided mechanical mounting can be accommodated in the application.

Parameter Comparison

Parameter IXFN48N50U3 APT5010JLLU3 STE48NM50 STE53NC50
Manufacturer IXYS Microchip Technology STMicroelectronics STMicroelectronics
Vdss (V) 500 500 550 500
Id @ 25°C (A Tc) 48 41 48 53
Rds On Max @ 10V (mOhm) 100 100 100 80
Vgs(th) Max (V) 4 @ 8mA 5 @ 2.5mA 5 @ 250µA 4 @ 250µA
Gate Charge Qg Max @ 10V (nC) 270 96 117 434
Power Dissipation Max (W Tc) 520 378 450 460
Operating Temperature (°C TJ) -40 to 150 -55 to 150 150 150
Package Type SOT-227B SOT-227 ISOTOP® ISOTOP®
Product Status Obsolete Active Active Active
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

APT5010JLLU3 (Microchip Technology)

This substitute is suitable for applications where continuous drain current requirements do not exceed 41A. The part maintains 500V Vdss and 100mOhm Rds On specifications. The APT5010JLLU3 is active and ROHS3 compliant, providing long-term supply assurance. The SOT-227 package is mechanically compatible with SOT-227B mounting requirements. Lower gate charge (96 nC) reduces switching losses compared to the original part. This option is appropriate for designs with current headroom or where thermal management can accommodate the reduced power dissipation rating of 378W.

STE48NM50 (STMicroelectronics)

This substitute provides matched continuous drain current (48A) and on-resistance (100mOhm) to the original IXFN48N50U3. The 550V Vdss rating exceeds the 500V requirement, providing additional voltage margin. The ISOTOP® package offers superior thermal performance with 450W dissipation capability. The part is active and ROHS3 compliant. Lower gate charge (117 nC) improves switching efficiency. The ISOTOP® package requires mechanical accommodation different from SOT-227B. This option is recommended for applications requiring current and thermal performance parity with the original design.

STE53NC50 (STMicroelectronics)

This substitute exceeds the original part specifications with 53A continuous drain current and superior on-resistance (80mOhm at 27A). The 500V Vdss matches the original requirement. The ISOTOP® package provides 460W thermal dissipation. The part is active and ROHS3 compliant. Higher gate charge (434 nC) increases switching losses relative to other substitutes. This option is appropriate for applications requiring enhanced current capacity or improved on-resistance performance, provided the ISOTOP® package can be mechanically integrated.

Frequently Asked Questions (FAQ)

Q: Can the APT5010JLLU3 be used as a direct replacement for the IXFN48N50U3?

A: The APT5010JLLU3 is electrically compatible for applications where continuous drain current does not exceed 41A. Both parts share 500V Vdss and 100mOhm Rds On specifications. The SOT-227 package is mechanically compatible with SOT-227B mounting. Applications requiring the full 48A continuous current rating must use STE48NM50 or STE53NC50.

Q: What are the package differences between SOT-227B and ISOTOP®?

A: SOT-227B is a four-lead surface mount package with integrated thermal pad. ISOTOP® is a chassis mount package with superior thermal performance through direct mounting to a heatsink. Both are classified as chassis mount types. Mechanical integration differs; ISOTOP® requires heatsink mounting provisions, while SOT-227B uses PCB-based thermal management. Electrical performance is independent of package type.

Q: Does the higher Vdss rating of STE48NM50 (550V vs. 500V) affect circuit compatibility?

A: No. Higher Vdss ratings provide additional voltage blocking margin and do not affect circuit operation. The STE48NM50 operates safely in circuits designed for 500V maximum drain-source voltage. The additional voltage rating provides design flexibility for transient overvoltage conditions.

Q: Which substitute part has the lowest switching losses?

A: The APT5010JLLU3 has the lowest gate charge (96 nC), resulting in the lowest switching losses. The STE48NM50 has intermediate gate charge (117 nC). The STE53NC50 has the highest gate charge (434 nC). Switching loss reduction is proportional to gate charge reduction.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. The APT5010JLLU3, STE48NM50, and STE53NC50 are all ROHS3 compliant. The original IXFN48N50U3 RoHS status is not specified in the provided data.

Q: Can the STE53NC50 be used in applications designed for 48A continuous current?

A: Yes. The STE53NC50 supports 53A continuous current, exceeding the 48A requirement. The improved on-resistance (80mOhm) provides lower conduction losses. This part is suitable for applications requiring the original 48A specification with enhanced performance margin.

Q: What is the impact of different gate threshold voltages on circuit operation?

A: Gate threshold voltage differences (4V to 5V) do not affect circuit compatibility when gate drive voltage is 10V or higher. All substitute parts are specified at 10V gate drive, ensuring consistent on-resistance performance. Threshold voltage variations affect switching speed characteristics but not steady-state operation.

Q: Is the extended operating temperature range of APT5010JLLU3 (-55°C to 150°C) significant?

A: The APT5010JLLU3 provides extended low-temperature operation to -55°C compared to the IXFN48N50U3 (-40°C). This is advantageous for applications requiring operation in cold environments. The upper temperature limit (150°C) is identical across all parts.

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