IXFN48N50Q Equivalent & Substitute Parts

Part Overview

The IXFN48N50Q is an N-Channel MOSFET rated for 500V drain-to-source voltage with 48A continuous drain current at 25°C. Manufactured by IXYS, this device is housed in a SOT-227B (miniBLOC) chassis mount package and is part of the HiPerFET™ Q Class series. The component is Active in product status and RoHS3 compliant.

Substitute parts are identified when equivalent electrical performance and mechanical compatibility are required due to component availability, inventory constraints, or design flexibility within specified parameter ranges.

Substiute Parts

IXFN48N50Q

IXYSIn Stock: 68878IXFN48N50Q Datasheet

Current PartRFQ

IXFN80N50Q3

IXYSIn Stock: 883IXFN80N50Q3 Datasheet

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APT5010JVFR

Microchip TechnologyIn Stock: 884APT5010JVFR Datasheet

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STE48NM50

STMicroelectronicsIn Stock: 1678STE48NM50 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IXFN48N50Q is determined by the following critical parameters:

Voltage Rating: All substitute parts must maintain a minimum Vdss of 500V to ensure safe operation in the intended application circuit.

Current Rating: Substitute parts with continuous drain current ratings of 44A or greater satisfy the 48A requirement, provided thermal management and power dissipation limits are respected.

On-State Resistance (Rds On): Maximum on-state resistance must not exceed 100 mOhm at the specified gate voltage (10V) to maintain equivalent conduction losses.

Package Compatibility: Substitute parts must be housed in chassis mount packages (SOT-227B, ISOTOP®) to ensure mechanical fit and thermal interface compatibility.

Compliance & Status: All substitute parts must maintain Active product status and RoHS3 compliance to meet regulatory and supply chain requirements.

Parameter Comparison

Engineering Selection Recommendations

IXFN80N50Q3 (IXYS): This substitute maintains identical voltage rating (500V) and package type (SOT-227B) as the primary part. The higher continuous drain current (63A) and improved on-state resistance (65 mOhm) provide enhanced performance margin. Both devices are Active status with RoHS3 compliance. The IXFN80N50Q3 is suitable for applications where increased current capacity and reduced conduction losses are beneficial.

APT5010JVFR (Microchip Technology): This substitute meets the 500V voltage requirement and provides 44A continuous drain current, which approaches the 48A specification. On-state resistance matches the primary part at 100 mOhm. The ISOTOP® package provides equivalent chassis mount thermal interface. Both devices maintain Active status and RoHS3 compliance. The APT5010JVFR is applicable where package form factor flexibility is acceptable.

STE48NM50 (STMicroelectronics): This substitute provides matched continuous drain current (48A) and on-state resistance (100 mOhm) to the primary part. The voltage rating is elevated to 550V, providing additional margin. The ISOTOP® package maintains chassis mount compatibility. Both devices are Active status with RoHS3 compliance. The STE48NM50 is suitable for applications requiring higher voltage headroom while maintaining equivalent current handling.

Frequently Asked Questions (FAQ)

Q: Can the IXFN80N50Q3 be used as a direct replacement for the IXFN48N50Q?

A: Yes. Both devices share identical voltage rating (500V), on-state resistance specification (100 mOhm at 10V), and SOT-227B package type. The IXFN80N50Q3 provides higher continuous drain current (63A versus 48A) and improved thermal performance (780W versus 500W), making it a compatible upgrade.

Q: What is the primary difference between SOT-227B and ISOTOP® packages?

A: Both are chassis mount packages designed for high-power applications. SOT-227B (miniBLOC) and ISOTOP® provide equivalent thermal interface capabilities. Selection depends on PCB layout compatibility and thermal management design requirements.

Q: Is the APT5010JVFR suitable if the application requires exactly 48A continuous current?

A: The APT5010JVFR is rated for 44A continuous drain current, which is below the 48A specification of the primary part. This substitute is applicable only if the actual circuit current demand does not exceed 44A.

Q: Why does the STE48NM50 have a higher voltage rating (550V) than the IXFN48N50Q (500V)?

A: The elevated voltage rating provides additional safety margin in high-voltage applications. The STE48NM50 remains fully compatible with 500V circuit designs, as it can safely operate at lower voltages than its maximum rating.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. The IXFN80N50Q3, APT5010JVFR, and STE48NM50 are all RoHS3 compliant, matching the regulatory status of the primary IXFN48N50Q device.

Q: What is the significance of gate charge (Qg) differences among these parts?

A: Gate charge affects switching speed and driver circuit requirements. The STE48NM50 has lower gate charge (117 nC) compared to the primary part (190 nC), resulting in faster switching. The APT5010JVFR has higher gate charge (470 nC), requiring more robust gate drive circuitry.

Q: Can these substitutes be used interchangeably in the same circuit without design modifications?

A: Substitutes with identical package types (SOT-227B or ISOTOP®) and matching electrical parameters can be used interchangeably. However, differences in gate charge, input capacitance, and threshold voltage may require gate driver circuit evaluation to ensure proper switching performance.