IXFN48N50 N-Channel 500V 48A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFN48N50 is an N-Channel 500V 48A MOSFET manufactured by IXYS in the HiPerFET™ series, housed in a SOT-227B chassis mount package. This device is classified as "Not For New Designs," indicating it has reached end-of-life status. The part delivers 520W maximum power dissipation and operates across a temperature range of -55°C to 150°C. Due to its discontinued design status, equivalent and substitute parts from active product lines are necessary for ongoing applications and new system implementations.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	48	A
On-State Resistance (Rds On Max) @ 10V	100	mOhm
Gate Threshold Voltage (Vgs(th)) @ 8mA	4	V
Gate Charge (Qg) @ 10V	270	nC
Input Capacitance (Ciss) @ 25V	8400	pF
Maximum Power Dissipation	520	W
Operating Temperature Range	-55 to 150	°C
Package Type	SOT-227B (miniBLOC)	—
Mounting Type	Chassis Mount	—

Substitute Part Grouping Explanation

Substitution of the IXFN48N50 is determined by strict electrical and mechanical compatibility across the following parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): Must equal or exceed 500V
Continuous Drain Current (Id): Must equal or exceed 48A at 25°C
On-State Resistance (Rds On): Must not exceed 100mOhm at specified gate voltage
Gate Threshold Voltage (Vgs(th)): Must be compatible with 4V nominal specification
Package/Mounting: Chassis mount configuration in SOT-227B or equivalent ISOTOP® form factor
Technology: N-Channel MOSFET (Metal Oxide)

Secondary Compatibility Parameters:

Gate Charge (Qg): Lower values indicate faster switching characteristics
Input Capacitance (Ciss): Affects gate drive requirements
Power Dissipation: Must support thermal requirements of the application
Operating Temperature: Must maintain -55°C to 150°C range or equivalent

Substitute parts are grouped into two categories: direct IXYS HiPerFET™ series upgrades and cross-manufacturer alternatives from Microchip Technology and STMicroelectronics that meet or exceed the electrical specifications while maintaining chassis mount packaging.

Parameter Comparison

Parameter	IXFN48N50	IXFN64N50P	APT5010JLL	APT5010JVFR	APT5010JVRU2	STE48NM50	STE53NC50
Manufacturer	IXYS	IXYS	Microchip	Microchip	Microchip	STMicroelectronics	STMicroelectronics
Vdss (V)	500	500	500	500	500	550	500
Id @ 25°C (A)	48	61	41	44	44	48	53
Rds On Max @ 10V (mOhm)	100	85	100	100	100	100	80
Vgs(th) @ Specified Id (V)	4 @ 8mA	5.5 @ 8mA	5 @ 2.5mA	4 @ 2.5mA	4 @ 2.5mA	5 @ 250µA	4 @ 250µA
Qg @ 10V (nC)	270	150	95	470	312	117	434
Ciss @ 25V (pF)	8400	8700	4360	8900	7410	3700	11200
Power Dissipation Max (W)	520	700	—	—	450	450	460
Operating Temperature (°C)	-55 to 150	-55 to 150	—	—	-55 to 150	to 150	to 150
Package	SOT-227B	SOT-227B	ISOTOP®	ISOTOP®	SOT-227	ISOTOP®	ISOTOP®
Product Status	Not For New Designs	Active	Active	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IXFN64N50P (IXYS HiPerFET™ Series)

The IXFN64N50P is the primary upgrade path within the IXYS product family. It maintains the same 500V Vdss rating and SOT-227B package footprint as the IXFN48N50, while delivering 61A continuous drain current and improved on-state resistance of 85mOhm. The device is in Active product status and ROHS3 compliant. Power dissipation increases to 700W, providing enhanced thermal margin. Gate charge is reduced to 150nC, enabling faster switching performance. This part is suitable for direct replacement in existing designs with identical PCB layouts.

STE53NC50 (STMicroelectronics PowerMESH™ II Series)

The STE53NC50 meets the 500V Vdss requirement and exceeds the 48A current specification with 53A continuous drain current. It features superior on-state resistance of 80mOhm and is housed in an ISOTOP® chassis mount package. The device is Active and ROHS3 compliant. Gate charge of 434nC and input capacitance of 11200pF require verification against gate drive circuit specifications. Power dissipation of 460W is comparable to the original part. This substitute is suitable for applications where ISOTOP® package compatibility exists.

APT5010JVRU2 (Microchip POWER MOS Series)

The APT5010JVRU2 provides 44A continuous drain current at 500V Vdss with 100mOhm on-state resistance. It is housed in SOT-227 chassis mount packaging and is Active with ROHS3 compliance. Power dissipation of 450W and operating temperature range of -55°C to 150°C match the original specification. Gate threshold voltage of 4V aligns with the IXFN48N50. This part is suitable for applications requiring SOT-227 package compatibility with slightly reduced current capacity.

STE48NM50 (STMicroelectronics MDmesh™ Series)

The STE48NM50 matches the 48A continuous drain current specification and provides 550V Vdss, exceeding the original 500V rating. It features 100mOhm on-state resistance and is housed in ISOTOP® chassis mount packaging. The device is Active and ROHS3 compliant. Gate charge of 117nC is significantly lower than the original part, enabling faster switching. Power dissipation of 450W is slightly lower than the original specification. This substitute is suitable for applications where higher voltage margin and faster switching are beneficial.

APT5010JLL (Microchip POWER MOS 7® Series)

The APT5010JLL delivers 41A continuous drain current at 500V Vdss with 100mOhm on-state resistance. It is housed in ISOTOP® chassis mount packaging and is Active with ROHS3 compliance. Gate charge of 95nC provides the lowest switching loss among all substitutes. Input capacitance of 4360pF is the lowest in the group, reducing gate drive requirements. This part is suitable for applications where current capacity can be reduced in exchange for improved switching performance and reduced gate drive complexity.

Frequently Asked Questions (FAQ)

Q: Can the IXFN64N50P be used as a direct replacement for the IXFN48N50?

A: Yes. The IXFN64N50P maintains identical 500V Vdss rating, SOT-227B package footprint, and chassis mount configuration. The increased current rating (61A vs. 48A) and improved on-state resistance (85mOhm vs. 100mOhm) provide enhanced performance. No PCB layout modifications are required.

Q: What is the difference between SOT-227B and ISOTOP® packages?

A: SOT-227B and ISOTOP® are both chassis mount packages for power MOSFETs but have different mechanical and thermal characteristics. SOT-227B (miniBLOC) and ISOTOP® are not directly interchangeable without PCB redesign. Verify mounting hole patterns, lead configurations, and thermal interface requirements before substitution.

Q: Why does the STE53NC50 have higher gate charge (434nC) than the IXFN48N50 (270nC)?

A: Gate charge is determined by the device's internal capacitance and switching characteristics. Higher gate charge requires greater gate drive current and energy. Verify that the gate drive circuit can supply the required charge without exceeding voltage or current limits. Consult device datasheets for gate drive specifications.

Q: Can I use the APT5010JLL if my application requires 48A continuous current?

A: The APT5010JLL is rated for 41A continuous drain current, which is below the 48A requirement of the IXFN48N50. Use this part only if your actual application current is 41A or less. Exceeding the rated current will result in excessive junction temperature and device failure.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed are ROHS3 compliant and REACH unaffected, matching the environmental compliance status of the IXFN48N50.

Q: What is the impact of lower input capacitance (Ciss) on circuit design?

A: Lower input capacitance reduces the charge required to drive the gate and decreases switching losses. Parts with lower Ciss (such as STE48NM50 at 3700pF) require less gate drive power and enable faster switching transitions. Verify gate drive circuit compatibility with the specific Ciss value of the selected substitute.

Q: Why is the IXFN48N50 marked "Not For New Designs"?

A: This designation indicates the part has reached end-of-life status and is no longer recommended for new product development. Existing inventory remains available, but new designs should select from active product lines such as IXFN64N50P, STE53NC50, or APT5010 series alternatives.

Q: Can I mix different substitute parts in the same application?

A: Mixing different part numbers in parallel or series configurations requires careful analysis of current sharing, thermal distribution, and gate drive compatibility. Consult application notes from the respective manufacturers before implementing mixed-part designs.

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