IXFN44N50Q N-Channel 500V 44A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFN44N50Q is an N-Channel MOSFET manufactured by IXYS, rated for 500V drain-to-source voltage and 44A continuous drain current at 25°C. This device is packaged in SOT-227B (miniBLOC) configuration and is designed for chassis mount applications with 500W maximum power dissipation. The IXFN44N50Q is classified as obsolete product status, making identification of equivalent and substitute parts necessary for ongoing design support and procurement continuity.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	44	A (Tc)
On-Resistance (Rds On Max) @ 500mA, 10V	120	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 4mA	4	V
Gate Charge (Qg Max) @ 10V	190	nC
Input Capacitance (Ciss Max) @ 25V	7000	pF
Maximum Power Dissipation	500	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Chassis Mount
Package Type	SOT-227-4, miniBLOC
RoHS Status	ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the IXFN44N50Q is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): 500V minimum
Continuous Drain Current (Id): 44A minimum at 25°C
Gate Drive Voltage: 10V
Mounting Type: Chassis Mount
Package Configuration: SOT-227-4 or ISOTOP® (miniBLOC compatible)
RoHS3 Compliance and MSL Level 1

Secondary Compatibility Parameters:

On-Resistance (Rds On): Lower or equal values indicate improved performance
Gate Charge (Qg): Lower values reduce switching losses
Input Capacitance (Ciss): Affects gate drive requirements
Operating Temperature: Minimum 150°C junction temperature

The substitute parts listed below meet or exceed the primary substitution criteria, ensuring functional compatibility in applications designed for the IXFN44N50Q.

Parameter Comparison

Parameter	IXFN44N50Q	APT5010JVR	STE48NM50	STE53NC50	Unit
Manufacturer	IXYS	Microchip Technology	STMicroelectronics	STMicroelectronics
Vdss	500	500	550	500	V
Id @ 25°C	44	44	48	53	A (Tc)
Rds On (Max) @ 10V	120 @ 500mA	100 @ 500mA	100 @ 24A	80 @ 27A	mOhm
Vgs(th) (Max)	4 @ 4mA	4 @ 2.5mA	5 @ 250µA	4 @ 250µA	V
Qg (Max) @ 10V	190	470	117	434	nC
Ciss (Max) @ 25V	7000	8900	3700	11200	pF
Power Dissipation (Max)	500	Not specified	450	460	W (Tc)
Operating Temperature (Max)	150	Not specified	150	150	°C (TJ)
Mounting Type	Chassis Mount	Chassis Mount	Chassis Mount	Chassis Mount
Package	SOT-227-4, miniBLOC	ISOTOP®	ISOTOP®	ISOTOP®
Product Status	Obsolete	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

APT5010JVR (Microchip Technology)

The APT5010JVR is an active product offering identical voltage and current ratings (500V, 44A) with improved on-resistance performance (100mOhm vs. 120mOhm). This part is ROHS3 compliant and MSL Level 1, matching the compliance profile of the IXFN44N50Q. The ISOTOP® package provides mechanical compatibility with miniBLOC mounting requirements. Higher gate charge (470nC) and input capacitance (8900pF) require verification of gate drive circuit capability.

STE48NM50 (STMicroelectronics)

The STE48NM50 provides enhanced voltage rating (550V) and increased current capacity (48A) with equivalent on-resistance (100mOhm). This part is active and ROHS3 compliant. The MDmesh™ series technology delivers lower gate charge (117nC), reducing switching losses. Maximum power dissipation is 450W, slightly lower than the original specification. The ISOTOP® package is mechanically compatible.

STE53NC50 (STMicroelectronics)

The STE53NC50 is an active product with matching voltage rating (500V) and superior current capacity (53A). On-resistance is significantly improved (80mOhm), providing lower conduction losses. This part is ROHS3 compliant and MSL Level 1. The PowerMESH™ II series offers enhanced performance characteristics. Higher gate charge (434nC) and input capacitance (11200pF) require gate drive circuit assessment. The ISOTOP® package is mechanically compatible.

All substitute parts maintain RoHS3 compliance and MSL Level 1 moisture sensitivity, ensuring regulatory and environmental compatibility with the original IXFN44N50Q specification.

Frequently Asked Questions (FAQ)

Q: Can the APT5010JVR directly replace the IXFN44N50Q in existing designs?

A: The APT5010JVR meets the primary electrical specifications (500V, 44A) and mounting requirements. However, the higher gate charge (470nC vs. 190nC) and input capacitance (8900pF vs. 7000pF) may require gate drive circuit verification to ensure adequate switching performance and thermal management.

Q: What is the primary advantage of the STE48NM50 over the IXFN44N50Q?

A: The STE48NM50 provides higher voltage rating (550V vs. 500V), increased current capacity (48A vs. 44A), and significantly lower gate charge (117nC vs. 190nC), reducing switching losses. The lower gate charge enables faster switching transitions and reduced power dissipation in the gate drive circuit.

Q: Is the STE53NC50 suitable for applications requiring the exact 44A specification?

A: The STE53NC50 exceeds the 44A requirement with 53A continuous drain current capability. The improved on-resistance (80mOhm vs. 120mOhm) reduces conduction losses. Applications must verify that the higher gate charge (434nC) and input capacitance (11200pF) are compatible with existing gate drive circuits.

Q: Are all substitute parts available in the same package as the IXFN44N50Q?

A: The IXFN44N50Q uses SOT-227-4 (miniBLOC) packaging. The substitute parts use ISOTOP® packaging, which is mechanically compatible for chassis mount applications. Physical mounting dimensions and thermal interface requirements should be verified for specific PCB layouts.

Q: What compliance certifications are maintained across all substitute parts?

A: All substitute parts (APT5010JVR, STE48NM50, STE53NC50) are ROHS3 compliant and MSL Level 1, matching the environmental and regulatory compliance of the IXFN44N50Q. REACH status is unaffected for all parts.

Q: How does on-resistance affect thermal performance in these substitutes?

A: Lower on-resistance reduces conduction losses and heat generation. The STE53NC50 (80mOhm) generates less heat than the original IXFN44N50Q (120mOhm) at equivalent current levels. The APT5010JVR and STE48NM50 (both 100mOhm) provide intermediate thermal performance improvement.

Q: Can gate charge differences impact switching frequency performance?

A: Yes. Lower gate charge enables faster switching transitions. The STE48NM50 (117nC) supports higher switching frequencies with lower gate drive power requirements. The APT5010JVR (470nC) and STE53NC50 (434nC) require higher gate drive energy and may limit maximum switching frequency in current-limited gate drive circuits.

Q: What is the significance of input capacitance variation among these parts?

A: Input capacitance affects gate drive circuit impedance and switching speed. The STE48NM50 (3700pF) provides the lowest capacitance, enabling fastest switching. The STE53NC50 (11200pF) has the highest capacitance, requiring stronger gate drive capability to achieve equivalent switching performance.

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