IXFN44N100P Equivalent & Substitute Parts

Part Overview

The IXFN44N100P is an N-Channel MOSFET manufactured by IXYS, rated for 1000V drain-to-source voltage with 37A continuous drain current at 25°C. This device is part of the HiPerFET™ series and is housed in a SOT-227B (miniBLOC) chassis mount package. The part is currently Active in product status with 796 units in stock. Equivalent and substitute parts are identified based on matching electrical specifications and mechanical compatibility to support design flexibility, inventory optimization, and supply chain continuity.

Substiute Parts

IXFN44N100P
IXYSIn Stock: 826IXFN44N100P Datasheet
IXFN44N100P
Current Part
APT41F100J
Microchip TechnologyIn Stock: 1162APT41F100J Datasheet
APT41F100J
Similar

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 1000 V
Continuous Drain Current (Id) @ 25°C 37 A (Tc)
Drive Voltage (Max Rds On) 10 V
Rds On (Max) @ Id, Vgs 220 mOhm @ 22A, 10V
Power Dissipation (Max) 890 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
FET Type N-Channel
Technology MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitute parts for the IXFN44N100P are identified based on the following critical electrical and mechanical parameters:

Matching Criteria:

  • Drain to Source Voltage (Vdss): 1000V
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Mounting Type: Chassis Mount
  • Package Classification: SOT-227-4 / miniBLOC compatible
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Drive Voltage: 10V
  • RoHS3 Compliance
  • REACH Unaffected Status

Allowable Variations: Substitute parts may have higher continuous drain current (Id), lower on-resistance (Rds On), and higher power dissipation ratings, as these represent performance enhancements that maintain backward compatibility. Gate charge and input capacitance variations are acceptable within the specified voltage and current operating windows.

Parameter Comparison

Parameter IXFN44N100P APT41F100J Unit
Manufacturer IXYS Microchip Technology
Drain to Source Voltage (Vdss) 1000 1000 V
Continuous Drain Current (Id) @ 25°C 37 42 A (Tc)
Drive Voltage (Max Rds On) 10 10 V
Rds On (Max) @ Id, Vgs 220 @ 22A, 10V 210 @ 33A, 10V mOhm
Power Dissipation (Max) 890 960 W (Tc)
Operating Temperature Range -55 to 150 -55 to 150 °C (TJ)
Mounting Type Chassis Mount Chassis Mount
Package / Case SOT-227-4, miniBLOC SOT-227-4, miniBLOC
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Vgs (Max) ±30 ±30 V
RoHS Status ROHS3 Compliant ROHS3 Compliant
REACH Status REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

IXFN44N100P (Primary Part)

  • Active product status with established supply (796 units in stock)
  • ROHS3 compliant and REACH unaffected
  • Suitable for applications requiring 37A continuous drain current at 1000V
  • HiPerFET™ series designation indicates optimized performance characteristics

APT41F100J (Substitute Part)

  • Active product status with higher inventory availability (1061 units in stock)
  • ROHS3 compliant and REACH unaffected
  • Provides enhanced performance with 42A continuous drain current and 960W power dissipation
  • Lower on-resistance (210 mOhm @ 33A, 10V) compared to primary part
  • Identical voltage rating, temperature range, and package compatibility
  • Suitable for direct substitution in applications where higher current capacity and improved thermal performance are beneficial

Both parts meet identical regulatory and compliance requirements. Selection between these parts depends on application current requirements and thermal management considerations.

Frequently Asked Questions (FAQ)

Q: Can APT41F100J replace IXFN44N100P in existing designs? A: Yes. Both parts share identical drain-to-source voltage (1000V), operating temperature range (-55°C to 150°C), gate voltage limits (±30V), and chassis mount SOT-227-4 miniBLOC package specifications. The APT41F100J provides higher continuous drain current (42A vs. 37A) and improved on-resistance characteristics, making it a direct substitute.

Q: What are the key differences between these parts? A: The APT41F100J offers higher continuous drain current (42A vs. 37A), lower on-resistance (210 mOhm @ 33A, 10V vs. 220 mOhm @ 22A, 10V), and higher power dissipation capability (960W vs. 890W). Gate charge is higher in the APT41F100J (570 nC vs. 305 nC), and threshold voltage is lower (5V @ 5mA vs. 6.5V @ 1mA).

Q: Are package dimensions identical between these parts? A: Both parts use SOT-227-4 miniBLOC chassis mount packages. Mechanical compatibility is confirmed for PCB layout and thermal interface applications.

Q: Do both parts meet the same compliance standards? A: Yes. Both IXFN44N100P and APT41F100J are ROHS3 compliant and REACH unaffected, meeting identical regulatory requirements for industrial and commercial applications.

Q: Which part should be selected for new designs? A: Selection depends on application current requirements. For applications requiring 37A or less, either part is suitable. For applications approaching or exceeding 37A continuous current, the APT41F100J is the preferred choice due to its higher current rating and improved thermal characteristics.

Q: Are there any gate drive considerations when substituting these parts? A: Both parts operate at 10V drive voltage for maximum on-resistance specification. The APT41F100J has higher gate charge (570 nC vs. 305 nC), which may require gate driver circuits with higher current capability. Verify gate driver specifications for the specific application.

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