IXFN39N90 Equivalent & Substitute Parts

Part Overview

The IXFN39N90 is an N-Channel 900V 39A MOSFET manufactured by IXYS in the HiPerFET™ series, housed in a SOT-227B chassis mount package. This device is classified as "Not For New Designs," indicating it has reached end-of-life status. The part delivers 694W maximum power dissipation and operates across the temperature range of -55°C to 150°C. Due to its discontinued design status, equivalent and substitute parts are necessary for ongoing production support, maintenance applications, and design continuity where the IXFN39N90 specifications remain functionally adequate.

Substiute Parts

IXFN39N90

IXYSIn Stock: 68877IXFN39N90 Datasheet

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IXFN56N90P

IXYSIn Stock: 68682IXFN56N90P Datasheet

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APT10021JLL

Microchip TechnologyIn Stock: 940APT10021JLL Datasheet

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APT41F100J

Microchip TechnologyIn Stock: 1162APT41F100J Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IXFN39N90 is determined by the following critical parameters:

Mandatory Compatibility Criteria:

• Drain to Source Voltage (Vdss): Equal to or greater than 900V
• Continuous Drain Current (Id): Equal to or greater than 39A
• Gate Drive Voltage: 10V nominal
• Operating Temperature Range: -55°C to 150°C minimum
• Mounting Type: Chassis Mount
• Package Classification: SOT-227B or equivalent miniBLOC form factor

Acceptable Variation Parameters:

• On-State Resistance (Rds On): May be lower (improved performance)
• Gate Charge (Qg): May vary within reasonable bounds
• Input Capacitance (Ciss): May vary
• Power Dissipation: May be equal or higher
• Gate Threshold Voltage (Vgs(th)): Minor variations acceptable within gate drive specifications

The three substitute parts listed meet or exceed the IXFN39N90 electrical specifications while maintaining chassis mount configuration and compatible package geometry.

Parameter Comparison

Engineering Selection Recommendations

IXFN56N90P (IXYS)

The IXFN56N90P is the primary equivalent substitute for the IXFN39N90. Both devices are manufactured by IXYS within the HiPerFET™ series and share identical voltage ratings (900V Vdss) and package geometry (SOT-227B). The IXFN56N90P provides superior electrical performance with 56A continuous drain current versus 39A, and reduced on-state resistance (135mOhm versus 220mOhm). The IXFN56N90P maintains active product status, ensuring long-term availability and supply chain continuity. Both parts are ROHS3 compliant and operate across the identical temperature range. This substitute is suitable for direct replacement in applications where the increased current rating and improved efficiency do not create thermal or circuit design conflicts.

APT10021JLL (Microchip Technology)

The APT10021JLL is a functionally compatible substitute manufactured by Microchip Technology under the POWER MOS 7® series. This device operates at 1000V Vdss, providing 100V margin above the IXFN39N90 specification. The continuous drain current is 37A, marginally below the IXFN39N90 at 39A, with comparable on-state resistance (210mOhm versus 220mOhm). The APT10021JLL uses an ISOTOP® package, which differs from the SOT-227B form factor but maintains equivalent chassis mount configuration and miniBLOC geometry. This part is active and ROHS3 compliant. Selection of this substitute requires verification that the ISOTOP® package footprint is compatible with the existing PCB layout.

APT41F100J (Microchip Technology)

The APT41F100J is an alternative substitute from Microchip Technology offering 1000V Vdss and 42A continuous drain current, exceeding the IXFN39N90 specifications in both voltage margin and current capacity. On-state resistance is 210mOhm, comparable to the IXFN39N90. The APT41F100J features higher gate charge (570nC versus 390nC) and input capacitance (18500pF versus 9200pF), which may impact gate drive circuit design. This device uses the ISOTOP® package and is active with ROHS3 compliance. This substitute is appropriate for applications requiring enhanced current handling and voltage headroom, provided gate drive circuitry is rated for the increased capacitive loading.

Frequently Asked Questions (FAQ)

Q: Can the IXFN39N90 be directly replaced with the IXFN56N90P without circuit modification?

A: The IXFN56N90P is electrically compatible as a direct substitute. Both devices share identical voltage ratings (900V), package type (SOT-227B), and operating temperature range. The IXFN56N90P provides higher current capacity (56A versus 39A) and lower on-state resistance (135mOhm versus 220mOhm), which generally improve circuit performance. No circuit modification is required for basic functionality. However, thermal design should be reviewed to ensure the reduced on-state resistance does not create unintended thermal conditions in the application.

Q: What is the primary difference between SOT-227B and ISOTOP® packages?

A: Both SOT-227B and ISOTOP® are chassis mount packages classified as miniBLOC form factors. The SOT-227B is the IXYS designation, while ISOTOP® is the Microchip Technology designation for functionally equivalent packages. Both provide similar thermal and electrical performance characteristics. The primary difference is PCB footprint geometry. Substitution between these package types requires confirmation that the ISOTOP® footprint is compatible with the existing PCB layout and mounting hardware.

Q: Why does the APT41F100J have higher gate charge than the IXFN39N90?

A: Gate charge (Qg) is a function of the device's internal capacitance and is influenced by die size, current rating, and voltage rating. The APT41F100J operates at 1000V with 42A current capacity, compared to the IXFN39N90 at 900V with 39A. The larger die required to support higher voltage and current specifications results in increased gate charge (570nC versus 390nC). This requires gate drive circuitry capable of supplying higher charge per switching cycle. Gate drive circuit current and timing specifications should be reviewed before substitution.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. The IXFN39N90, IXFN56N90P, APT10021JLL, and APT41F100J are all ROHS3 compliant. All parts are also REACH unaffected and classified under ECCN EAR99. Moisture sensitivity level is 1 (Unlimited) for all devices, indicating no special moisture control requirements during storage or handling.

Q: What is the significance of "Not For New Designs" status on the IXFN39N90?

A: "Not For New Designs" indicates the IXFN39N90 has reached end-of-life and is no longer recommended for new product development. However, the part remains available for existing production support and maintenance applications. The substitute parts IXFN56N90P, APT10021JLL, and APT41F100J all carry "Active" product status, indicating ongoing manufacturer support, continued availability, and suitability for new designs.

Q: Can the APT10021JLL and APT41F100J be used interchangeably?

A: The APT10021JLL and APT41F100J are not direct interchanges. The APT10021JLL provides 37A continuous current with 210mOhm on-state resistance, while the APT41F100J provides 42A with identical on-state resistance. The APT41F100J has significantly higher gate charge (570nC versus 395nC) and input capacitance (18500pF versus 9750pF). Selection between these two parts depends on the application's current requirements and gate drive circuit specifications. The APT10021JLL is preferred where gate drive current is limited; the APT41F100J is preferred where higher current capacity is required.