IXFN38N80Q2 Equivalent & Substitute Parts

Part Overview

The IXFN38N80Q2 is an N-Channel MOSFET rated for 800V drain-to-source voltage with 38A continuous drain current at 25°C. This device is part of the IXYS HiPerFET™ Q2 Class series and is housed in a SOT-227B chassis mount package. The component is actively manufactured and fully compliant with RoHS3 and REACH regulations.

Substitute parts are identified when equivalent electrical performance and mechanical compatibility are maintained across critical parameters including voltage rating, current capacity, package type, and thermal characteristics. Alternative models may be required due to inventory availability, supply chain considerations, or specific application requirements.

Substiute Parts

IXFN38N80Q2

IXYSIn Stock: 68719IXFN38N80Q2 Datasheet

Current PartRFQ

IXFN44N80Q3

IXYSIn Stock: 1216IXFN44N80Q3 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IXFN38N80Q2 are identified based on strict equivalence across the following critical parameters:

Voltage Rating Equivalence: All substitute parts maintain the same 800V drain-to-source voltage (Vdss) rating, ensuring compatibility in high-voltage applications without circuit redesign.

Package and Mounting Compatibility: Substitute parts use the identical SOT-227B package with SOT-227-4 miniBLOC configuration and chassis mount mounting type, allowing direct mechanical and thermal interface compatibility.

Thermal and Power Characteristics: Substitute parts operate within the same temperature range (-55°C to 150°C) and maintain comparable power dissipation ratings, ensuring thermal management strategies remain valid.

Gate Drive Compatibility: All parts share the same 10V drive voltage specification for maximum Rds On rating, maintaining gate driver circuit compatibility.

Regulatory Compliance: All substitute parts maintain RoHS3 compliance, REACH unaffected status, and MSL Level 1 rating, ensuring no additional supply chain or assembly process modifications are required.

The IXFN44N80Q3 is identified as a substitute based on these equivalence criteria, with minor variations in continuous drain current (37A versus 38A) and on-resistance characteristics that remain within acceptable substitution parameters for this device category.

Parameter Comparison

Engineering Selection Recommendations

Primary Selection: The IXFN38N80Q2 remains the primary component choice when available. This device is actively manufactured with substantial inventory (68,656 pcs) and delivers the specified 38A continuous drain current rating.

Substitute Selection: The IXFN44N80Q3 is a valid substitute when the IXFN38N80Q2 is unavailable. Both devices maintain identical voltage ratings (800V), package configurations (SOT-227B), and thermal operating ranges (-55°C to 150°C). Both are RoHS3 compliant and REACH unaffected, requiring no modifications to supply chain or assembly processes.

Compatibility Considerations: The IXFN44N80Q3 delivers 37A continuous drain current, representing a 2.6% reduction from the IXFN38N80Q2 specification. The on-resistance characteristics differ due to different measurement conditions (190 mOhm @ 22A versus 220 mOhm @ 500mA), reflecting Q3 Class versus Q2 Class device characteristics. Gate threshold voltage increases from 4.5V to 6.5V, and input capacitance increases from 8340 pF to 9840 pF. These variations remain within acceptable substitution parameters for N-Channel MOSFET applications in the 800V class.

Regulatory and Compliance Status: Both devices maintain identical compliance certifications (RoHS3, REACH unaffected, MSL Level 1), ensuring no additional qualification or documentation requirements for substitution.

Frequently Asked Questions (FAQ)

Q: Can the IXFN44N80Q3 be used as a direct replacement for the IXFN38N80Q2?

A: Yes, the IXFN44N80Q3 is a valid substitute. Both devices share identical voltage ratings (800V), package types (SOT-227B), mounting configurations (chassis mount), and operating temperature ranges (-55°C to 150°C). The primary difference is a 1A reduction in continuous drain current (37A versus 38A) and variations in on-resistance and gate threshold characteristics. Applications requiring the full 38A rating should verify that the 37A specification of the substitute part meets circuit requirements.

Q: Are there package compatibility concerns when substituting the IXFN44N80Q3 for the IXFN38N80Q2?

A: No package compatibility concerns exist. Both parts use the SOT-227-4 miniBLOC package with identical chassis mount configuration. PCB layouts, thermal interface materials, and mounting hardware require no modification.

Q: Do gate driver circuits require adjustment when using the IXFN44N80Q3 as a substitute?

A: Gate driver circuits do not require modification. Both devices specify 10V drive voltage for maximum Rds On rating and ±30V maximum gate voltage. However, the gate threshold voltage differs (4.5V for IXFN38N80Q2 versus 6.5V for IXFN44N80Q3). Gate drivers with adaptive threshold detection may exhibit different switching characteristics. Static gate drive circuits operate without modification.

Q: What are the thermal implications of substituting the IXFN44N80Q3?

A: The IXFN44N80Q3 provides higher maximum power dissipation (780W versus 735W), indicating improved thermal performance. Both devices operate across the identical temperature range (-55°C to 150°C). Existing thermal management designs remain valid for the substitute part.

Q: Are there regulatory or compliance differences between these parts?

A: No regulatory differences exist. Both the IXFN38N80Q2 and IXFN44N80Q3 are RoHS3 compliant, REACH unaffected, and carry MSL Level 1 (unlimited) moisture sensitivity ratings. No additional supply chain, assembly, or documentation modifications are required for substitution.

Q: How do the on-resistance characteristics compare between these parts?

A: The IXFN38N80Q2 specifies 220 mOhm maximum on-resistance at 500mA and 10V gate voltage. The IXFN44N80Q3 specifies 190 mOhm maximum on-resistance at 22A and 10V gate voltage. These measurements reflect different test conditions and device classes (Q2 versus Q3). Direct comparison requires evaluation at identical operating points. The lower on-resistance of the substitute part generally indicates improved conduction characteristics at higher current levels.

Q: What is the significance of the Q2 and Q3 class designations?

A: The Q2 and Q3 designations indicate different generations within the IXYS HiPerFET™ series. These classifications reflect design improvements and performance optimizations. Both classes maintain compatibility across voltage ratings, package types, and thermal specifications relevant to substitution decisions.