IXFN38N100Q2 Equivalent & Substitute Parts

Part Overview

The IXFN38N100Q2 is an N-Channel 1000 V, 38 A (Tc) power MOSFET manufactured by IXYS in the HiPerFET™ Q2 Class series. This device is housed in a SOT-227B chassis mount package and is rated for 890 W maximum power dissipation. The part is classified as "Not For New Designs," indicating that while it remains available in inventory (1328 pcs), alternative solutions should be evaluated for new circuit implementations. Identifying equivalent and substitute parts is necessary to support ongoing maintenance, repair, and legacy system requirements while enabling access to active product alternatives with comparable electrical and mechanical characteristics.

Substiute Parts

IXFN38N100Q2

IXYSIn Stock: 1348IXFN38N100Q2 Datasheet

Current PartRFQ

APT10025JVR

Microchip TechnologyIn Stock: 1613APT10025JVR Datasheet

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APT41F100J

Microchip TechnologyIn Stock: 1162APT41F100J Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFN38N100Q2 is determined by strict alignment of the following critical electrical and mechanical parameters:

Mandatory Matching Parameters:

• Drain to Source Voltage (Vdss): 1000 V
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)

Allowable Variation Parameters:

• Continuous Drain Current (Id): Substitute parts must meet or exceed 38 A (Tc)
• On-State Resistance (Rds On): Substitute parts must not exceed 250 mOhm at rated conditions
• Gate Charge (Qg): Substitute parts may vary; lower values indicate improved switching performance
• Input Capacitance (Ciss): Substitute parts may vary; lower values indicate reduced gate drive requirements
• Power Dissipation: Substitute parts must meet or exceed 890 W (Tc)

The two identified substitute parts, APT10025JVR and APT41F100J, both satisfy the mandatory matching criteria and operate within the allowable variation parameters for continuous drain current and on-state resistance specifications.

Parameter Comparison

Engineering Selection Recommendations

APT10025JVR (Microchip Technology): This substitute operates at 34 A (Tc) continuous drain current, which is below the 38 A specification of the IXFN38N100Q2. The on-state resistance specification of 250 mOhm matches the original part. However, the gate charge of 990 nC is significantly higher than the original 250 nC, and input capacitance is 18000 pF compared to 7200 pF. This part is classified as Active product status, ensuring ongoing availability and support. APT10025JVR is suitable for applications where the 34 A current rating is sufficient and where increased gate charge and input capacitance do not present circuit design constraints.

APT41F100J (Microchip Technology): This substitute operates at 42 A (Tc) continuous drain current, exceeding the 38 A specification of the IXFN38N100Q2. The on-state resistance is 210 mOhm at 33 A, 10 V, which is superior to the original 250 mOhm specification. Power dissipation is rated at 960 W (Tc), exceeding the original 890 W. Operating temperature range matches the original at -55°C to 150°C (TJ). Gate charge is 570 nC, higher than the original 250 nC but lower than APT10025JVR. This part is classified as Active product status. APT41F100J provides enhanced electrical performance across current, resistance, and power dissipation parameters and is the preferred substitute for new implementations requiring equivalent or superior performance.

Both substitute parts maintain compliance with ROHS3 and REACH requirements, matching the original part's regulatory status.

Frequently Asked Questions (FAQ)

Q: Can APT10025JVR be used as a direct replacement for IXFN38N100Q2?

A: APT10025JVR meets the mandatory package, voltage, and mounting requirements. However, the 34 A continuous drain current rating is 4 A below the original 38 A specification. This part is suitable only for applications where the reduced current rating does not exceed circuit requirements. The significantly higher gate charge (990 nC vs. 250 nC) and input capacitance (18000 pF vs. 7200 pF) may require gate drive circuit adjustments.

Q: Is APT41F100J a superior substitute to APT10025JVR?

A: APT41F100J provides higher continuous drain current (42 A vs. 34 A), lower on-state resistance (210 mOhm vs. 250 mOhm), and higher power dissipation capability (960 W vs. unspecified). Gate charge is lower than APT10025JVR (570 nC vs. 990 nC), reducing gate drive requirements. APT41F100J is the preferred substitute for applications requiring performance equivalent to or exceeding the original IXFN38N100Q2.

Q: Are the package dimensions identical between IXFN38N100Q2 and the substitute parts?

A: All three parts use the SOT-227-4, miniBLOC package designation with chassis mount configuration. Physical dimensions and mounting interfaces are equivalent, enabling direct mechanical substitution without PCB redesign.

Q: What is the significance of the "Not For New Designs" status of IXFN38N100Q2?

A: This status indicates that IXYS has discontinued active development and marketing of this part. While inventory remains available (1328 pcs), new circuit designs should utilize the active substitute parts APT10025JVR or APT41F100J from Microchip Technology to ensure long-term supply chain stability and access to manufacturer technical support.

Q: Do the substitute parts require different gate drive voltage levels?

A: All three parts specify a maximum gate-source voltage (Vgs Max) of ±30 V. Gate threshold voltages are comparable: IXFN38N100Q2 at 5 V @ 8 mA, APT10025JVR at 4 V @ 5 mA, and APT41F100J at 5 V @ 5 mA. Gate drive circuits designed for the original part are compatible with both substitutes, though the higher gate charge of APT10025JVR may require increased drive current capacity.

Q: Are there compliance or regulatory differences between the original and substitute parts?

A: All three parts are ROHS3 compliant, REACH unaffected, and classified under ECCN EAR99 and HTSUS 8541.29.0095. Regulatory and environmental compliance status is equivalent across all parts.