IXFN36N60 Equivalent & Substitute Parts

Part Overview

The IXFN36N60 is an N-Channel MOSFET rated for 600V drain-to-source voltage with 36A continuous drain current at 25°C. Manufactured by IXYS under the HiPerFET™ series, this device is housed in a SOT-227B chassis mount package and dissipates up to 520W. The part is marked as "Not For New Designs," indicating it has been superseded in the product lifecycle. Identifying equivalent and substitute parts is necessary for ongoing maintenance, repair, and legacy system support where the original specification must be maintained or where improved performance characteristics are acceptable.

Substiute Parts

IXFN36N60

IXYSIn Stock: 68808IXFN36N60 Datasheet

Current PartRFQ

IXFN48N60P

IXYSIn Stock: 68768IXFN48N60P Datasheet

SimilarRFQ

STE40NC60

STMicroelectronicsIn Stock: 997STE40NC60 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFN36N60 is determined by the following critical electrical and mechanical parameters:

Mandatory Matching Criteria:

• Drain-to-Source Voltage (Vdss): 600V minimum
• Package Type: SOT-227B or equivalent chassis mount configuration
• FET Type: N-Channel MOSFET
• Mounting: Chassis Mount

Acceptable Variation Criteria:

• Continuous Drain Current (Id): Equal to or greater than 36A
• On-State Resistance (Rds On): Equal to or lower than 180 mOhm (lower values indicate improved performance)
• Power Dissipation: Equal to or greater than 520W
• Gate Threshold Voltage: Within ±20% of original specification
• Operating Temperature: Minimum -55°C to +150°C

Substitute parts must maintain voltage and package compatibility while meeting or exceeding current and thermal performance. Parts with lower on-state resistance and higher power dissipation ratings provide direct functional upgrades.

Parameter Comparison

Engineering Selection Recommendations

IXFN48N60P (IXYS)

The IXFN48N60P is a direct functional upgrade within the same manufacturer's HiPerFET™ series. It maintains the SOT-227B package configuration and 600V rating while providing 40A continuous drain current versus the original 36A. The on-state resistance is reduced to 140 mOhm, resulting in lower conduction losses and improved thermal performance with 625W maximum power dissipation. Gate charge is significantly reduced to 150 nC, enabling faster switching characteristics. The part carries Active product status and ROHS3 compliance, making it suitable for ongoing production and support applications. This substitute is recommended for direct replacement in existing designs where the improved electrical characteristics are beneficial.

STE40NC60 (STMicroelectronics)

The STE40NC60 provides equivalent voltage and current ratings (600V, 40A) with superior on-state resistance of 130 mOhm at 20A. However, this part uses the ISOTOP® package rather than SOT-227B, requiring mechanical redesign of the mounting interface. The gate charge specification is higher at 430 nC, and input capacitance is increased to 11100 pF, which may affect switching speed in high-frequency applications. Power dissipation is rated at 460W, which is lower than both the original and the IXFN48N60P. The part is Active and ROHS3 compliant. Selection of this substitute requires verification of mechanical compatibility with the ISOTOP® package footprint and thermal management considerations.

Frequently Asked Questions (FAQ)

Q: Can the IXFN48N60P be used as a direct replacement for the IXFN36N60?

A: Yes. Both parts share the same 600V rating, SOT-227B package, and chassis mount configuration. The IXFN48N60P provides higher current capacity (40A vs. 36A) and lower on-state resistance (140 mOhm vs. 180 mOhm), making it a functional upgrade. No circuit modifications are required for pin-compatible substitution.

Q: What are the mechanical differences between SOT-227B and ISOTOP® packages?

A: SOT-227B (miniBLOC) and ISOTOP® are distinct chassis mount package formats with different footprints, mounting hole configurations, and thermal interface designs. Direct mechanical substitution between these packages requires PCB redesign and mounting hardware modification. Electrical performance may differ due to thermal coupling variations.

Q: Is the STE40NC60 suitable for high-frequency switching applications?

A: The STE40NC60 has a higher gate charge (430 nC) and input capacitance (11100 pF) compared to the IXFN36N60 (325 nC, 9000 pF). These characteristics result in slower switching transitions. For applications requiring fast switching, the IXFN48N60P with its reduced gate charge (150 nC) is the preferred substitute.

Q: Why is the IXFN36N60 marked "Not For New Designs"?

A: This designation indicates the part has been superseded in the manufacturer's product lifecycle. While existing inventory remains available for support and repair, new designs should utilize active alternatives such as the IXFN48N60P to ensure long-term availability and access to design support resources.

Q: What is the significance of lower on-state resistance in a substitute part?

A: Lower on-state resistance (Rds On) reduces conduction losses during device operation, resulting in decreased power dissipation, lower junction temperatures, and improved overall system efficiency. A substitute with lower Rds On provides improved thermal performance and reliability compared to the original specification.

Q: Are all three parts RoHS3 compliant?

A: Yes. The IXFN36N60, IXFN48N60P, and STE40NC60 are all ROHS3 compliant, meeting environmental and hazardous substance restrictions for electronic components in regulated markets.

Q: Can gate charge differences affect circuit performance?

A: Yes. Gate charge determines the energy required to switch the MOSFET on and off. The IXFN48N60P with 150 nC requires less gate charge than the original 325 nC, enabling faster switching and reduced driver power consumption. The STE40NC60 with 430 nC requires more gate charge, potentially requiring a more robust gate driver circuit.