IXFN36N100 N-Channel MOSFET 1KV 36A Equivalent & Substitute Parts

Part Overview

The IXFN36N100 is an N-Channel MOSFET rated for 1000 V drain-to-source voltage with 36 A continuous drain current at 25°C. This device is housed in a SOT-227B chassis mount package and delivers 700 W maximum power dissipation. The part is manufactured by IXYS under the HiPerFET™ series and carries a product status of Not For New Designs, indicating that alternative components should be evaluated for new circuit implementations. Identifying equivalent and substitute parts is necessary to ensure design flexibility, improve component availability, and support long-term production continuity.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	1000	V
Continuous Drain Current (Id) @ 25°C	36	A
On-State Resistance (Rds On Max) @ 10V	240	mOhm
Gate Threshold Voltage (Vgs th Max)	5	V @ 8mA
Gate Charge (Qg Max) @ 10V	380	nC
Power Dissipation (Max)	700	W
Operating Temperature Range	-55 to 150	°C
Package Type	SOT-227B (miniBLOC)	Chassis Mount

Substitute Part Grouping Explanation

Substitution of the IXFN36N100 is determined by the following critical electrical and mechanical parameters:

Mandatory Matching Criteria:

Drain-to-Source Voltage (Vdss): 1000 V minimum
Continuous Drain Current (Id): Equal to or greater than 36 A
Package Type: SOT-227B or equivalent chassis mount configuration
Operating Temperature Range: -55°C to 150°C minimum
FET Type: N-Channel MOSFET technology

Performance Considerations:

On-State Resistance (Rds On): Lower values indicate improved efficiency
Gate Charge (Qg): Lower values reduce switching losses
Power Dissipation: Higher ratings provide thermal margin
Gate Threshold Voltage (Vgs th): Compatibility with existing drive circuits

The substitute parts listed below meet or exceed the mandatory criteria while offering improved electrical performance characteristics in the same or compatible package configurations.

Parameter Comparison

Parameter	IXFN36N100	IXFN38N100P	APT41F100J	Unit
Manufacturer	IXYS	IXYS	Microchip Technology	—
Drain-to-Source Voltage (Vdss)	1000	1000	1000	V
Continuous Drain Current (Id) @ 25°C	36	38	42	A
Rds On (Max) @ 10V	240 @ 500mA	210 @ 19A	210 @ 33A	mOhm
Gate Threshold Voltage (Vgs th Max)	5 @ 8mA	6.5 @ 1mA	5 @ 5mA	V
Gate Charge (Qg Max) @ 10V	380	350	570	nC
Input Capacitance (Ciss Max) @ 25V	9200	24000	18500	pF
Power Dissipation (Max)	700	1000	960	W
Operating Temperature Range	-55 to 150	-55 to 150	-55 to 150	°C
Package Type	SOT-227B	SOT-227B	ISOTOP®	—
Product Status	Not For New Designs	Active	Active	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

IXFN38N100P (IXYS)

The IXFN38N100P is a direct substitute within the IXYS HiPerFET™ product family. This part maintains the same 1000 V Vdss rating and SOT-227B package configuration while providing 38 A continuous drain current, exceeding the IXFN36N100 specification by 2 A. The IXFN38N100P delivers improved on-state resistance (210 mOhm versus 240 mOhm) and lower gate charge (350 nC versus 380 nC), resulting in reduced conduction and switching losses. The part carries Active product status and ROHS3 compliance, making it suitable for new designs. Inventory availability is significantly higher at 68,556 pieces.

APT41F100J (Microchip Technology)

The APT41F100J is a cross-manufacturer substitute manufactured by Microchip Technology. This device maintains the 1000 V Vdss rating and provides 42 A continuous drain current, offering the highest current rating among the three options. The APT41F100J features equivalent on-state resistance (210 mOhm) and Active product status. The package configuration is ISOTOP® rather than SOT-227B; however, both are chassis mount configurations with compatible thermal and electrical characteristics. Gate charge is higher at 570 nC, which may increase switching losses in high-frequency applications. This part is ROHS3 compliant and carries Active product status.

Selection Basis:

For direct form-fit-function replacement: IXFN38N100P maintains identical package geometry and series continuity while offering performance improvements and Active product status.
For maximum current capacity: APT41F100J provides the highest current rating (42 A) and power dissipation (960 W), suitable for applications requiring thermal margin or higher current handling.
For new designs: Both IXFN38N100P and APT41F100J carry Active product status and are suitable for new circuit implementations, whereas IXFN36N100 is designated Not For New Designs.

Frequently Asked Questions (FAQ)

Q: Can the IXFN38N100P directly replace the IXFN36N100 in existing designs?

A: Yes. The IXFN38N100P maintains the same 1000 V Vdss rating, SOT-227B package configuration, and operating temperature range. The higher current rating (38 A versus 36 A) and improved electrical characteristics (lower Rds On and Qg) make it a direct substitute. No circuit modifications are required.

Q: What is the primary difference between the IXFN38N100P and APT41F100J?

A: Both parts meet the 1000 V Vdss and 36 A minimum current requirements. The IXFN38N100P uses SOT-227B packaging, while the APT41F100J uses ISOTOP® packaging. The APT41F100J provides higher current capacity (42 A) and power dissipation (960 W). Gate charge is lower in the IXFN38N100P (350 nC versus 570 nC), which may reduce switching losses in high-frequency applications.

Q: Are package differences between SOT-227B and ISOTOP® significant for substitution?

A: Both SOT-227B and ISOTOP® are chassis mount packages designed for high-power applications. They differ in physical dimensions and mounting interface. Substitution between these packages requires verification of mechanical fit, thermal interface compatibility, and PCB layout accommodation. Electrical performance and thermal characteristics are comparable.

Q: Why is the IXFN36N100 marked as Not For New Designs?

A: The Not For New Designs status indicates that the manufacturer recommends using alternative components for new circuit implementations. This typically reflects product maturity, availability considerations, or the availability of improved alternatives. The IXFN38N100P and APT41F100J both carry Active product status and are recommended for new designs.

Q: Do all three parts meet RoHS3 compliance requirements?

A: Yes. The IXFN36N100, IXFN38N100P, and APT41F100J are all ROHS3 compliant. All parts are REACH unaffected and carry EAR99 export classification.

Q: What is the impact of higher gate charge on circuit performance?

A: Gate charge (Qg) affects switching speed and driver power requirements. The IXFN38N100P has lower gate charge (350 nC) compared to the APT41F100J (570 nC). In high-frequency switching applications, lower gate charge reduces switching losses and allows faster switching transitions. The IXFN36N100 has the highest gate charge (380 nC) among the three options.

Q: Can I use the APT41F100J in a design originally specified for the IXFN36N100?

A: Yes, provided that the mechanical package change from SOT-227B to ISOTOP® is accommodated in the PCB layout and thermal management design. The electrical specifications are compatible, with the APT41F100J offering superior current capacity and power dissipation. Verification of mounting interface and thermal interface material compatibility is required.

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