IXFN34N80 Equivalent & Substitute Parts

Part Overview

The IXFN34N80 is an N-Channel MOSFET rated for 800V drain-to-source voltage with 34A continuous drain current at 25°C, housed in a SOT-227B chassis mount package. This device is part of the HiPerFET™ series and is classified as "Not For New Designs," indicating it has been superseded in the manufacturer's product roadmap. Applications requiring this voltage and current rating may benefit from evaluating active alternative components that maintain electrical and mechanical compatibility.

Substiute Parts

IXFN34N80

IXYSIn Stock: 68794IXFN34N80 Datasheet

Current PartRFQ

IXFN44N80P

IXYSIn Stock: 68689IXFN44N80P Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFN34N80 is determined by the following critical parameters:

Electrical Compatibility Criteria:

• Drain-to-Source Voltage (Vdss) must equal or exceed 800V
• Continuous Drain Current (Id) must meet or exceed 34A at 25°C
• On-State Resistance (Rds On) must not exceed the application's thermal and conduction loss budget
• Gate Threshold Voltage (Vgs(th)) must remain within ±20V maximum gate voltage specification
• Operating temperature range must span -55°C to 150°C

Mechanical Compatibility Criteria:

• Package type must be SOT-227B (miniBLOC) for direct board-level substitution
• Mounting configuration must be Chassis Mount

The IXFN44N80P meets all electrical and mechanical compatibility requirements while offering improved performance characteristics and active product status.

Parameter Comparison

Engineering Selection Recommendations

IXFN44N80P as Primary Substitute:

The IXFN44N80P is the direct equivalent for the IXFN34N80 based on the following engineering criteria:

1. Electrical Compatibility: Both devices share identical Vdss (800V) and operating temperature range (-55°C to 150°C). The IXFN44N80P provides 39A continuous drain current, exceeding the IXFN34N80's 34A rating, ensuring full backward compatibility in current-limited applications.

2. On-State Performance: The IXFN44N80P exhibits lower on-state resistance (190 mOhm vs. 240 mOhm), resulting in reduced conduction losses and improved thermal performance. Gate charge is reduced (200 nC vs. 270 nC), enabling faster switching characteristics.

3. Mechanical Compatibility: Both devices utilize the SOT-227B (miniBLOC) chassis mount package, permitting direct board-level substitution without layout modifications.

4. Regulatory Compliance: Both parts maintain ROHS3 compliance and REACH unaffected status, satisfying environmental and regulatory requirements.

5. Product Status: The IXFN44N80P carries "Active" product status, ensuring long-term availability and continued manufacturer support, whereas the IXFN34N80 is designated "Not For New Designs."

Frequently Asked Questions (FAQ)

Q: Can the IXFN44N80P directly replace the IXFN34N80 without circuit modifications?

A: Yes. Both devices share identical Vdss (800V), gate threshold voltage (5V @ 8mA), operating temperature range (-55°C to 150°C), and SOT-227B package configuration. The IXFN44N80P's higher current rating (39A vs. 34A) and lower on-state resistance (190 mOhm vs. 240 mOhm) provide enhanced performance without requiring design changes.

Q: What are the thermal implications of substituting the IXFN44N80P?

A: The IXFN44N80P offers superior thermal characteristics. Maximum power dissipation increases from 600W to 694W, and on-state resistance decreases by 50 mOhm. These parameters result in lower junction temperatures under identical operating conditions, improving reliability and thermal margin.

Q: Are there differences in gate drive requirements between these devices?

A: Both devices require 10V drive voltage for maximum on-state resistance specification. The IXFN44N80P accepts a higher maximum gate voltage (±30V vs. ±20V), providing additional gate drive flexibility. Gate charge is reduced in the IXFN44N80P (200 nC vs. 270 nC), enabling faster switching with equivalent or reduced gate drive circuitry.

Q: Does the increased input capacitance of the IXFN44N80P affect circuit performance?

A: Input capacitance increases from 7500 pF to 12000 pF. This parameter influences gate charge requirements and switching speed. Applications with fixed gate drive impedance may experience slightly slower switching transitions. Gate charge reduction (200 nC vs. 270 nC) partially offsets the capacitance increase, maintaining overall switching performance in most applications.

Q: Are both devices available in the same packaging options?

A: Both the IXFN34N80 and IXFN44N80P are supplied in SOT-227B (miniBLOC) chassis mount configuration. The IXFN44N80P is available in Tube packaging, while the IXFN34N80 packaging specification is not detailed. Verify packaging requirements with your procurement specification.

Q: What is the significance of the IXFN34N80's "Not For New Designs" status?

A: This designation indicates the IXFN34N80 has been superseded in the manufacturer's product portfolio. While existing inventory remains available, IXYS recommends the IXFN44N80P for new circuit designs. Substitution ensures access to active product support, extended availability, and alignment with current manufacturing processes.

Q: Are there compliance or certification differences between these parts?

A: Both devices maintain identical regulatory status: ROHS3 compliant, REACH unaffected, and EAR99 export classification. No compliance barriers exist for substitution.