IXFN34N100 N-Channel MOSFET 1000V 34A Equivalent & Substitute Parts

Part Overview

The IXFN34N100 is an N-Channel MOSFET rated for 1000V drain-to-source voltage with 34A continuous drain current at 25°C. This device is part of the IXYS HiPerFET™ series and is housed in a SOT-227B chassis mount package. The IXFN34N100 is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support and procurement continuity. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating the same or compatible package footprints.

Substiute Parts

IXFN34N100

IXYSIn Stock: 68726IXFN34N100 Datasheet

Current PartRFQ

IXFN38N100P

IXYSIn Stock: 68595IXFN38N100P Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFN34N100 is determined by electrical and mechanical compatibility across the following critical parameters:

Voltage Rating Compatibility: The substitute part must maintain the 1000V Vdss rating to ensure safe operation in the same circuit topology without voltage derating.

Current Capability: The substitute part must support continuous drain current at or above 34A at 25°C to handle the same load conditions without thermal stress.

On-State Resistance (Rds On): The substitute part's Rds On must not exceed the original specification to prevent increased power dissipation and thermal runaway in the application.

Gate Drive Characteristics: The substitute part must operate within compatible gate threshold voltage (Vgs(th)) and maximum gate voltage (Vgs Max) ranges to ensure proper gate drive circuit compatibility.

Thermal Performance: The substitute part must support power dissipation at or above 700W to maintain thermal margin in the application.

Package Compatibility: The substitute part must use the SOT-227B package (SOT-227-4, miniBLOC) to ensure mechanical fit and thermal interface compatibility with existing PCB layouts and heat sinks.

Operating Temperature Range: The substitute part must support the full -55°C to 150°C operating temperature range.

The IXFN38N100P qualifies as a substitute based on these criteria.

Parameter Comparison

Engineering Selection Recommendations

IXFN38N100P as Primary Substitute

The IXFN38N100P is the qualified substitute for the obsolete IXFN34N100. This substitution is supported by the following engineering factors:

Electrical Compatibility: The IXFN38N100P maintains the 1000V Vdss rating and exceeds the 34A continuous drain current requirement with a 38A rating. The on-state resistance of 210 mOhm is lower than the original 280 mOhm specification, resulting in reduced power dissipation and improved thermal performance. Gate threshold voltage and maximum gate voltage specifications are compatible with standard gate drive circuits.

Thermal Advantage: The IXFN38N100P supports 1000W power dissipation compared to the original 700W rating, providing additional thermal margin for the application.

Package Compatibility: Both devices use the SOT-227B (SOT-227-4, miniBLOC) chassis mount package, ensuring mechanical and thermal interface compatibility with existing designs.

Compliance and Regulatory Status: The IXFN38N100P is REACH Unaffected and carries EAR99 classification, matching the regulatory profile of the original part. The device is RoHS3 compliant and maintains MSL 1 (Unlimited) moisture sensitivity rating.

Product Status: The IXFN38N100P is classified as Active, ensuring long-term availability and supply chain continuity compared to the obsolete IXFN34N100.

Design Considerations: The IXFN38N100P exhibits higher input capacitance (24000 pF versus 9200 pF) and slightly higher gate threshold voltage (6.5V versus 5.5V). Gate drive circuits must be verified to accommodate these parameter variations, though both values remain within standard gate drive operating ranges.

Frequently Asked Questions (FAQ)

Q: Can the IXFN38N100P directly replace the IXFN34N100 without circuit modifications?

A: The IXFN38N100P is electrically compatible with the IXFN34N100 across voltage, current, and thermal specifications. Both devices use the SOT-227B package and operate within the same temperature range. However, the higher input capacitance (24000 pF versus 9200 pF) and gate threshold voltage (6.5V versus 5.5V) of the IXFN38N100P may require gate drive circuit verification to ensure proper switching performance and timing characteristics in the specific application.

Q: What is the primary advantage of substituting the IXFN34N100 with the IXFN38N100P?

A: The IXFN38N100P provides improved thermal performance with 1000W power dissipation capability versus 700W for the original part. The lower on-state resistance (210 mOhm versus 280 mOhm) reduces conduction losses, resulting in lower junction temperatures and extended device lifetime. Additionally, the IXFN38N100P is an active product with assured long-term availability, whereas the IXFN34N100 is obsolete.

Q: Are there package compatibility concerns when substituting the IXFN34N100?

A: No. Both the IXFN34N100 and IXFN38N100P use the SOT-227B (SOT-227-4, miniBLOC) chassis mount package. The mechanical footprint, pin configuration, and thermal interface are identical, allowing direct PCB layout compatibility without redesign.

Q: How do the gate charge characteristics compare between these devices?

A: The IXFN38N100P has a lower gate charge (350 nC versus 380 nC at 10V), which may result in slightly faster switching transitions. This difference is typically negligible in most applications but should be verified if the design operates at high switching frequencies or has tight timing constraints.

Q: What compliance certifications apply to the IXFN38N100P?

A: The IXFN38N100P is RoHS3 compliant, REACH Unaffected, and carries EAR99 export classification. These certifications match the regulatory profile of the original IXFN34N100, ensuring compatibility with environmental and trade compliance requirements.

Q: Is the IXFN38N100P suitable for applications requiring the full -55°C to 150°C operating temperature range?

A: Yes. The IXFN38N100P supports the complete -55°C to 150°C junction temperature range, matching the original IXFN34N100 specification. Thermal design must account for the higher power dissipation capability and lower on-state resistance when calculating junction temperature at maximum operating conditions.