IXFN340N06 Equivalent & Substitute Parts

Part Overview

The IXFN340N06 is an N-Channel MOSFET rated for 60V drain-to-source voltage with a continuous drain current of 340A at 25°C. This device features a SOT-227B chassis mount package and is part of the IXYS HiPerFET™ series. The part is classified as "Not For New Designs," indicating it has been superseded in the manufacturer's product roadmap. Identifying equivalent and substitute parts is necessary for applications requiring continued support, legacy system maintenance, or when the original part becomes unavailable.

Substiute Parts

IXFN340N06
IXYSIn Stock: 870IXFN340N06 Datasheet
IXFN340N06
Current Part
IXFN360N10T
IXYSIn Stock: 2153IXFN360N10T Datasheet
IXFN360N10T
Similar

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 60 V
Continuous Drain Current (Id) @ 25°C 340 A
Rds On (Max) @ Id, Vgs 3 mOhm @ 100A, 10V
Power Dissipation (Max) 700 W
Operating Temperature Range -55 to 150 °C
Package Type SOT-227B Chassis Mount
Gate Charge (Qg) @ 10V 600 nC
Input Capacitance (Ciss) @ 25V 16800 pF

Substitute Part Grouping Explanation

Substitution of the IXFN340N06 is determined by compatibility across the following critical parameters:

Package and Mounting: Both the main part and substitute must use the SOT-227B chassis mount package to ensure mechanical and thermal interface compatibility.

Voltage Rating: The substitute part must have a Vdss rating equal to or greater than 60V. A higher voltage rating provides design margin and does not compromise functionality in 60V applications.

Current Capability: The substitute must support continuous drain current at or above 340A to maintain equivalent current-handling capacity.

Thermal Performance: Power dissipation rating must be sufficient for the application's thermal requirements.

Gate Drive Characteristics: Gate charge and threshold voltage must be compatible with existing gate drive circuitry.

Temperature Range: Operating temperature specifications must encompass the application's thermal environment.

The IXFN360N10T meets these substitution criteria while offering enhanced specifications in voltage rating and power dissipation.

Parameter Comparison

Parameter IXFN340N06 IXFN360N10T Unit
Manufacturer IXYS IXYS
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Series HiPerFET™ HiPerFET™, Trench
Drain to Source Voltage (Vdss) 60 100 V
Continuous Drain Current (Id) @ 25°C 340 360 A
Rds On (Max) @ Id, Vgs 3 @ 100A, 10V 2.6 @ 180A, 10V mOhm
Vgs(th) (Max) @ Id 4 @ 8mA 4.5 @ 250µA V
Gate Charge (Qg) @ 10V 600 505 nC
Vgs (Max) ±20 ±20 V
Input Capacitance (Ciss) @ 25V 16800 36000 pF
Power Dissipation (Max) 700 830 W
Operating Temperature Range -55 to 150 -55 to 175 °C
Mounting Type Chassis Mount Chassis Mount
Package / Case SOT-227-4, miniBLOC SOT-227-4, miniBLOC
RoHS Status ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected
Product Status Not For New Designs Active

Engineering Selection Recommendations

IXFN360N10T as Primary Substitute

The IXFN360N10T is the qualified substitute for the IXFN340N06. Both devices share identical package geometry (SOT-227B, miniBLOC) and mounting configuration, ensuring direct mechanical and thermal compatibility.

Compliance and Status: The IXFN360N10T carries Active product status, whereas the IXFN340N06 is designated "Not For New Designs." Both parts maintain ROHS3 compliance, REACH unaffected status, and MSL Level 1 rating, ensuring regulatory alignment for new and legacy applications.

Electrical Compatibility: The IXFN360N10T provides a higher voltage rating (100V versus 60V), which is fully compatible with 60V system designs and provides additional design margin. The continuous drain current of 360A exceeds the 340A requirement. Gate drive voltage remains at 10V for both parts, supporting existing driver circuits.

Performance Advantages: The substitute exhibits lower on-resistance (2.6 mOhm versus 3 mOhm) and reduced gate charge (505 nC versus 600 nC), resulting in improved efficiency and faster switching characteristics. Extended operating temperature range (-55°C to 175°C versus -55°C to 150°C) accommodates broader thermal environments.

Design Considerations: The IXFN360N10T features higher input capacitance (36000 pF versus 16800 pF), which may require gate drive circuit evaluation for switching speed compatibility. Applications with tight gate drive timing constraints must verify driver capability.

Frequently Asked Questions (FAQ)

Q: Can the IXFN360N10T directly replace the IXFN340N06 in existing designs?

A: Yes, the IXFN360N10T is mechanically and electrically compatible as a direct substitute. Both devices use the SOT-227B chassis mount package. The higher voltage rating and improved specifications of the IXFN360N10T do not compromise functionality in 60V applications. Gate drive circuits must accommodate the higher input capacitance of the substitute.

Q: What is the significance of the "Not For New Designs" status on the IXFN340N06?

A: This designation indicates the IXFN340N06 has been superseded in the manufacturer's product portfolio. The part remains available for legacy system support and maintenance. New designs should utilize the IXFN360N10T or other active-status alternatives.

Q: Are there thermal management differences between these parts?

A: The IXFN360N10T has a higher maximum power dissipation rating (830W versus 700W) and an extended operating temperature range (175°C versus 150°C maximum junction temperature). Both devices use identical SOT-227B chassis mount packages, so thermal interface characteristics are equivalent. System thermal design must account for the specific application's heat dissipation requirements.

Q: How do the gate charge specifications affect circuit design?

A: The IXFN360N10T requires less gate charge (505 nC versus 600 nC) for switching transitions. This results in faster switching speed and reduced gate drive power consumption. Existing gate drive circuits designed for the IXFN340N06 will function with the IXFN360N10T, though switching performance will improve.

Q: What is the impact of higher input capacitance in the IXFN360N10T?

A: The IXFN360N10T exhibits higher input capacitance (36000 pF versus 16800 pF). This increases the charge required to drive the gate and may extend switching transition times if the gate driver has limited current capability. Gate driver circuits must be verified to deliver sufficient current for the application's switching frequency and performance requirements.

Q: Are both parts compliant with current regulatory standards?

A: Yes, both the IXFN340N06 and IXFN360N10T are ROHS3 compliant, REACH unaffected, and carry MSL Level 1 rating. Both parts meet current environmental and regulatory requirements for electronic component use.

Q: What packaging considerations apply to these devices?

A: Both devices use the SOT-227-4 miniBLOC chassis mount package. This package type requires direct mounting to a heatsink or chassis for thermal management. Mechanical mounting interfaces, bolt hole patterns, and thermal interface materials are identical between the two parts.

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