IXFN280N085 Equivalent & Substitute Parts

Part Overview

The IXFN280N085 is an N-Channel MOSFET rated for 85V drain-to-source voltage with 280A continuous drain current in a chassis-mount SOT-227B package. This device is part of the IXYS HiPerFET™ series and is classified as "Not For New Designs," indicating it has been superseded in the manufacturer's product roadmap. Applications requiring this device specification or seeking functionally compatible alternatives must evaluate substitute parts based on electrical performance parameters and package compatibility.

Substiute Parts

IXFN280N085
IXYSIn Stock: 300487IXFN280N085 Datasheet
IXFN280N085
Current Part
IXFN360N15T2
IXYSIn Stock: 3661IXFN360N15T2 Datasheet
IXFN360N15T2
Direct
IXFN420N10T
IXYSIn Stock: 1340IXFN420N10T Datasheet
IXFN420N10T
Similar

Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 85 V
Continuous Drain Current (Id) @ 25°C 280 A
On-State Resistance (Rds On) @ 100A, 10V 4.4 mOhm
Gate Threshold Voltage (Vgs(th)) @ 8mA 4 V
Gate Charge (Qg) @ 10V 580 nC
Power Dissipation (Max) 700 W
Operating Temperature Range -55 to 150 °C
Package Type SOT-227B (miniBLOC)
Mounting Type Chassis Mount

Substitute Part Grouping Explanation

Substitution of the IXFN280N085 is determined by compatibility across the following critical parameters: drain-to-source voltage rating (Vdss), continuous drain current capacity (Id), on-state resistance (Rds On), package type, and mounting configuration. All substitute parts must maintain the SOT-227B chassis-mount package to ensure mechanical and thermal interface compatibility.

The IXFN280N085 operates at 85V with 280A continuous current. Substitute parts are grouped into two categories:

Direct Substitutes: Parts with equal or higher voltage ratings and current capacity, maintaining or improving thermal performance while preserving package compatibility.

Similar Substitutes: Parts with different voltage or current specifications that may serve equivalent functional roles in applications where the exact electrical parameters are not critical constraints.

Parameter Comparison

Parameter IXFN280N085 IXFN360N15T2 IXFN420N10T Unit
Drain-to-Source Voltage (Vdss) 85 150 100 V
Continuous Drain Current (Id) @ 25°C 280 310 420 A
On-State Resistance (Rds On) 4.4 @ 100A, 10V 4.0 @ 60A, 10V 2.3 @ 60A, 10V mOhm
Gate Threshold Voltage (Vgs(th)) @ 8mA 4 5 5 V
Gate Charge (Qg) @ 10V 580 715 670 nC
Power Dissipation (Max) 700 1070 1070 W
Operating Temperature Range -55 to 150 -55 to 175 -55 to 175 °C
Package Type SOT-227B SOT-227B SOT-227B
Mounting Type Chassis Mount Chassis Mount Chassis Mount
Product Status Not For New Designs Active Active
Series HiPerFET™ HiPerFET™, TrenchT2™ HiPerFET™, Trench

Engineering Selection Recommendations

IXFN360N15T2 (Direct Substitute): This part is classified as Active and provides higher voltage rating (150V vs. 85V) with increased continuous drain current (310A vs. 280A). The on-state resistance is lower (4.0 mOhm vs. 4.4 mOhm), and power dissipation capability is significantly higher (1070W vs. 700W). Operating temperature range extends to 175°C. This device is suitable for applications requiring the IXFN280N085 where higher voltage headroom and thermal margin are beneficial. Both parts share the SOT-227B package and chassis-mount configuration. RoHS3 compliance and REACH unaffected status are maintained.

IXFN420N10T (Similar Substitute): This part is classified as Active and offers the highest continuous drain current (420A) with the lowest on-state resistance (2.3 mOhm). Voltage rating is 100V, which exceeds the IXFN280N085 specification. Power dissipation and operating temperature range match the IXFN360N15T2. This device is applicable where current capacity and efficiency are prioritized. Package and mounting compatibility are preserved. RoHS3 compliance and REACH unaffected status are maintained.

Both substitute parts are Active products suitable for new designs, whereas the IXFN280N085 is designated "Not For New Designs." Selection between substitutes depends on application voltage requirements and thermal management constraints.

Frequently Asked Questions (FAQ)

Q: Can the IXFN360N15T2 replace the IXFN280N085 in existing designs?

A: Yes. The IXFN360N15T2 maintains the same SOT-227B package and chassis-mount configuration. The higher voltage rating (150V) and current capacity (310A) provide functional compatibility. Verify that the application circuit can accommodate the higher gate charge (715 nC vs. 580 nC) and input capacitance (47500 pF vs. 19000 pF) without requiring gate driver modifications.

Q: What is the primary difference between the IXFN360N15T2 and IXFN420N10T?

A: The IXFN360N15T2 is rated for 150V drain-to-source voltage, while the IXFN420N10T is rated for 100V. The IXFN420N10T provides superior current handling (420A vs. 310A) and lower on-state resistance (2.3 mOhm vs. 4.0 mOhm). Selection depends on whether the application requires higher voltage isolation or maximum current efficiency.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. The IXFN280N085, IXFN360N15T2, and IXFN420N10T are all RoHS3 compliant with Moisture Sensitivity Level 1 (Unlimited). REACH status is unaffected for all three devices.

Q: Does the higher operating temperature range of substitute parts affect compatibility?

A: The substitute parts extend the maximum operating temperature to 175°C compared to 150°C for the IXFN280N085. This provides additional thermal margin and does not negatively impact compatibility. Applications operating within the original 150°C limit experience no adverse effects.

Q: What packaging format is available for substitute parts?

A: The IXFN360N15T2 and IXFN420N10T are supplied in Tube packaging. Both maintain the SOT-227B (miniBLOC) package type and chassis-mount configuration required for mechanical and thermal interface compatibility.

Q: How do gate charge differences affect circuit design?

A: The IXFN280N085 has a gate charge of 580 nC, while both substitutes have higher values (715 nC for IXFN360N15T2 and 670 nC for IXFN420N10T). Higher gate charge requires longer switching times or higher gate drive current. Verify that the gate driver circuit can supply sufficient current to meet application switching frequency requirements.

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