IXFN280N07 Equivalent & Substitute Parts

Part Overview

The IXFN280N07 is an N-Channel MOSFET rated for 70V drain-to-source voltage with 280A continuous drain current at 25°C, housed in a SOT-227B chassis mount package. This device is part of the IXYS HiPerFET™ series and is classified as Not For New Designs. Due to its obsolescence status, identification of functionally equivalent substitute components is necessary for ongoing maintenance, repair, and legacy system support where the original part is unavailable or supply is limited.

Substiute Parts

IXFN280N07

IXYSIn Stock: 68686IXFN280N07 Datasheet

Current PartRFQ

IXFN360N10T

IXYSIn Stock: 2153IXFN360N10T Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFN280N07 is determined by the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: The substitute must support the application's maximum drain-to-source voltage requirement. The IXFN280N07 operates at 70V; substitutes with equal or higher voltage ratings are acceptable.

Current Handling Capacity: The substitute must deliver equal or greater continuous drain current at 25°C to maintain system performance. The IXFN280N07 is rated for 280A; substitutes must meet or exceed this specification.

On-State Resistance (Rds On): Lower Rds On values reduce conduction losses and heat dissipation. Substitutes with equal or lower Rds On characteristics improve thermal performance.

Package and Mounting: The SOT-227B chassis mount package is a critical mechanical requirement. Substitutes must use identical or directly compatible packaging to ensure proper thermal management and mechanical fit.

Gate Charge and Input Capacitance: These parameters affect switching speed and gate drive requirements. Substitutes with comparable or lower values maintain circuit timing and driver compatibility.

Temperature Range: The operating temperature range must support the application environment. Substitutes with equal or extended temperature ranges are acceptable.

The IXFN360N10T meets these substitution criteria with enhanced electrical performance characteristics while maintaining package and mounting compatibility.

Parameter Comparison

Engineering Selection Recommendations

IXFN360N10T as Primary Substitute

The IXFN360N10T is the designated substitute for the IXFN280N07. This substitution is supported by the following factors:

Electrical Performance Enhancement: The IXFN360N10T provides 360A continuous drain current, exceeding the IXFN280N07's 280A rating by 28.6%. The on-state resistance is reduced to 2.6 mOhm, compared to 5 mOhm, resulting in lower conduction losses and improved thermal efficiency.

Voltage Rating Upgrade: The 100V drain-to-source voltage rating of the IXFN360N10T exceeds the IXFN280N07's 70V specification, providing additional design margin for transient voltage conditions.

Package and Mounting Compatibility: Both devices use the SOT-227B miniBLOC package with chassis mount configuration, ensuring mechanical and thermal interface compatibility without modification.

Product Status and Availability: The IXFN360N10T holds Active product status with 2,100 units in stock, whereas the IXFN280N07 is classified as Not For New Designs with limited future availability. This substitution ensures long-term supply continuity.

Compliance and Certification: Both devices are ROHS3 compliant, REACH unaffected, and carry identical moisture sensitivity and ECCN classifications, ensuring regulatory and supply chain compatibility.

Extended Temperature Range: The IXFN360N10T supports operation to 175°C, compared to 150°C for the IXFN280N07, providing enhanced thermal margin in high-temperature applications.

Frequently Asked Questions (FAQ)

Q: Can the IXFN360N10T directly replace the IXFN280N07 in existing designs?

A: Yes. Both devices share the SOT-227B chassis mount package and identical pinout configuration. The IXFN360N10T's higher current rating, lower on-state resistance, and higher voltage rating make it functionally superior for direct substitution. No circuit modifications are required.

Q: What are the key electrical differences between these two MOSFETs?

A: The IXFN360N10T provides higher drain current (360A vs. 280A), lower on-state resistance (2.6 mOhm vs. 5 mOhm), higher voltage rating (100V vs. 70V), and greater power dissipation capability (830W vs. 600W). These improvements reduce conduction losses and thermal stress in the application.

Q: Will the higher input capacitance of the IXFN360N10T affect gate drive circuit performance?

A: The IXFN360N10T has higher input capacitance (36,000 pF vs. 9,400 pF), which increases gate charge requirements. Existing gate drive circuits must supply sufficient current to charge the gate within the required switching time. Gate drive circuit evaluation is necessary to confirm compatibility with the higher capacitance.

Q: Are both devices RoHS compliant?

A: Yes. Both the IXFN280N07 and IXFN360N10T are ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements.

Q: What is the moisture sensitivity level for these devices?

A: Both devices carry Moisture Sensitivity Level (MSL) 1, indicating unlimited shelf life without moisture control measures. Standard handling and storage practices are sufficient.

Q: Why is the IXFN280N07 classified as Not For New Designs?

A: The IXFN280N07 is an older generation HiPerFET™ device. IXYS has transitioned to newer technology platforms, including the Trench-based IXFN360N10T, which offers superior electrical performance and improved manufacturing efficiency. New designs should utilize the IXFN360N10T or other current-generation alternatives.

Q: Is the SOT-227B package suitable for high-current applications?

A: Yes. The SOT-227B miniBLOC package is specifically designed for high-current power semiconductor applications. The chassis mount configuration provides direct thermal coupling to external heat sinks, enabling efficient heat dissipation for continuous currents in the 280A to 360A range.

Q: What is the gate threshold voltage difference, and does it affect circuit operation?

A: The IXFN360N10T has a slightly higher gate threshold voltage (4.5V vs. 4V). This difference is within typical gate drive voltage margins (10V nominal) and does not affect standard circuit operation. Gate drive circuits designed for the IXFN280N07 remain compatible.