IXFN27N80Q Equivalent & Substitute Parts

Part Overview

The IXFN27N80Q is an N-Channel MOSFET rated for 800V drain-to-source voltage with 27A continuous drain current at 25°C. Manufactured by IXYS, this device is part of the HiPerFET™ Q Class series and is housed in a SOT-227B chassis mount package. The part is Active in product status and RoHS3 compliant.

Substitute parts are identified when equivalent electrical performance and mechanical compatibility are required due to inventory constraints, design optimization, or application-specific current and power dissipation requirements.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	800	V
Continuous Drain Current (Id) @ 25°C	27	A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs	320	mOhm @ 500mA, 10V
Gate Threshold Voltage (Vgs(th) Max) @ Id	4.5	V @ 4mA
Power Dissipation (Max)	520	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	SOT-227B	Chassis Mount
FET Type	N-Channel	MOSFET

Substitute Part Grouping Explanation

Substitution of the IXFN27N80Q is based on the following criteria:

Electrical Compatibility Requirements:

Drain-to-source voltage (Vdss) must equal or exceed 800V
FET type must be N-Channel MOSFET
Operating temperature range must encompass -55°C to 150°C
Package type must be SOT-227B (SOT-227-4, miniBLOC)
Mounting configuration must be Chassis Mount

Performance Considerations:

Continuous drain current (Id) at 25°C
On-state resistance (Rds On)
Power dissipation capability
Gate charge characteristics

The IXFN44N80Q3 qualifies as a substitute part because it maintains identical voltage rating (800V), identical package configuration (SOT-227B), identical mounting type (Chassis Mount), and identical operating temperature range (-55°C to 150°C). The substitute part offers enhanced current handling (37A vs. 27A) and increased power dissipation capability (780W vs. 520W).

Parameter Comparison

Parameter	IXFN27N80Q	IXFN44N80Q3	Unit
Manufacturer	IXYS	IXYS	—
FET Type	N-Channel	N-Channel	—
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	800	800	V
Continuous Drain Current (Id) @ 25°C	27	37	A (Tc)
Drive Voltage (Max Rds On)	10	10	V
Rds On (Max) @ Id, Vgs	320 @ 500mA, 10V	190 @ 22A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id	4.5 @ 4mA	6.5 @ 8mA	V
Gate Charge (Qg) (Max) @ Vgs	170 @ 10V	185 @ 10V	nC
Input Capacitance (Ciss) (Max) @ Vds	7600 @ 25V	9840 @ 25V	pF
Power Dissipation (Max)	520	780	W (Tc)
Operating Temperature Range	-55 to 150	-55 to 150	°C (TJ)
Mounting Type	Chassis Mount	Chassis Mount	—
Package / Case	SOT-227-4, miniBLOC	SOT-227-4, miniBLOC	—
Product Status	Active	Active	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	—
REACH Status	REACH Unaffected	REACH Unaffected	—

Engineering Selection Recommendations

Primary Part: IXFN27N80Q

The IXFN27N80Q is the specified component for applications requiring 27A continuous drain current at 800V with 520W maximum power dissipation. This part is Active in product status, RoHS3 compliant, and carries MSL Level 1 (Unlimited) moisture sensitivity rating. The device is suitable for direct board-level integration in chassis mount configurations.

Substitute Part: IXFN44N80Q3

The IXFN44N80Q3 is a direct substitute when higher current capacity or increased power dissipation is required within the same voltage class and package footprint. This part maintains identical electrical specifications for voltage rating (800V), operating temperature range (-55°C to 150°C), and mechanical compatibility (SOT-227B chassis mount). The IXFN44N80Q3 is also Active in product status, RoHS3 compliant, and carries MSL Level 1 (Unlimited) rating.

Both parts are manufactured by IXYS and belong to the HiPerFET™ series, ensuring consistent thermal and electrical performance characteristics within the 800V MOSFET product family.

Frequently Asked Questions (FAQ)

Q: Can the IXFN44N80Q3 be used as a direct replacement for the IXFN27N80Q?

A: Yes. Both devices share identical drain-to-source voltage (800V), package configuration (SOT-227B), mounting type (Chassis Mount), and operating temperature range (-55°C to 150°C). The IXFN44N80Q3 provides higher continuous drain current (37A vs. 27A) and greater power dissipation capability (780W vs. 520W), making it suitable for applications requiring enhanced current handling.

Q: What are the key electrical differences between these parts?

A: The primary differences are continuous drain current (27A vs. 37A), on-state resistance (320mOhm vs. 190mOhm), gate threshold voltage (4.5V vs. 6.5V), gate charge (170nC vs. 185nC), input capacitance (7600pF vs. 9840pF), and power dissipation (520W vs. 780W). Both maintain the same 800V voltage rating and 10V drive voltage specification.

Q: Are the packages physically identical?

A: Yes. Both the IXFN27N80Q and IXFN44N80Q3 use the SOT-227B package (SOT-227-4, miniBLOC) with Chassis Mount configuration. Pin-to-pin compatibility is maintained, allowing direct PCB substitution without layout modifications.

Q: Do both parts meet the same compliance standards?

A: Yes. Both parts are RoHS3 compliant, REACH unaffected, and carry MSL Level 1 (Unlimited) moisture sensitivity rating. Both are classified under ECCN EAR99 and HTSUS 8541.29.0095.

Q: What is the operating temperature range for both devices?

A: Both the IXFN27N80Q and IXFN44N80Q3 operate across the identical temperature range of -55°C to 150°C (TJ).

Q: Which part should be selected for new designs?

A: Selection depends on application current and power dissipation requirements. For applications requiring 27A continuous current and 520W dissipation, the IXFN27N80Q is appropriate. For applications requiring higher current capacity or thermal headroom, the IXFN44N80Q3 is the suitable choice. Both parts are Active in product status and suitable for new designs.

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