IXFN27N80 N-Channel MOSFET 800V 27A Equivalent & Substitute Parts

Part Overview

The IXFN27N80 is an N-Channel MOSFET manufactured by IXYS, rated for 800V drain-to-source voltage with 27A continuous drain current at 25°C. The device is housed in a SOT-227B (miniBLOC) chassis mount package and delivers 520W maximum power dissipation. This part belongs to the HiPerFET™ series and is classified as "Not For New Designs," indicating it has been superseded in the manufacturer's product roadmap. Identifying equivalent and substitute parts is necessary for design continuity, inventory management, and long-term production support when the primary part reaches end-of-life status.

Substiute Parts

IXFN27N80

IXYSIn Stock: 1991IXFN27N80 Datasheet

Current PartRFQ

IXFN32N80P

IXYSIn Stock: 955IXFN32N80P Datasheet

SimilarRFQ

APT8030JVFR

Microchip TechnologyIn Stock: 815APT8030JVFR Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IXFN27N80 is determined by the following critical parameters:

Primary Substitution Criteria:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 800V
• Continuous Drain Current (Id): Must meet or exceed 27A at 25°C
• Package Type: Must be SOT-227B (miniBLOC) chassis mount
• On-State Resistance (Rds On): Must not exceed 300mOhm at rated conditions to maintain thermal and switching performance
• Operating Temperature Range: Must support -55°C to 150°C (TJ)
• Compliance: Must maintain ROHS3 compliance and REACH unaffected status

Substitute Parts Identified:

1. IXFN32N80P (IXYS): Meets all primary criteria with improved specifications (29A, 270mOhm, 625W). Active product status. Same package and series.

2. APT8030JVFR (Microchip Technology): Meets voltage and package requirements (25A, 300mOhm, ISOTOP package variant). Active product status. Cross-manufacturer alternative.

Parameter Comparison

Engineering Selection Recommendations

IXFN32N80P (IXYS): This part is the primary recommended substitute for the IXFN27N80. It maintains identical voltage rating (800V) and package configuration (SOT-227B miniBLOC) while offering superior electrical performance: higher continuous drain current (29A vs. 27A), lower on-state resistance (270mOhm vs. 300mOhm), and higher power dissipation capability (625W vs. 520W). The IXFN32N80P carries Active product status, ensuring long-term availability and manufacturing support. Both parts belong to the IXYS HiPerFET™ series, providing design continuity. ROHS3 compliance and REACH unaffected status are maintained. This substitute is suitable for direct replacement in existing designs without circuit modification.

APT8030JVFR (Microchip Technology): This part serves as a cross-manufacturer alternative when IXYS parts are unavailable. It meets the critical voltage (800V) and package (SOT-227-4 miniBLOC) requirements with equivalent on-state resistance (300mOhm). The continuous drain current is slightly lower (25A vs. 27A), which may require thermal analysis in current-limited applications. The APT8030JVFR carries Active product status and maintains ROHS3 compliance and REACH unaffected status. Gate charge is higher (510nC vs. 400nC), which may affect switching speed in high-frequency applications. This substitute is appropriate for applications where cross-manufacturer sourcing is acceptable and thermal margins permit the lower current rating.

Frequently Asked Questions (FAQ)

Q: Can the IXFN32N80P directly replace the IXFN27N80 without circuit changes?

A: Yes. The IXFN32N80P is a direct pin-compatible replacement in the SOT-227B package. It maintains the same 800V voltage rating and chassis mount configuration. The improved electrical specifications (higher current, lower resistance, higher power dissipation) make it suitable for existing designs without modification.

Q: What is the key difference between IXFN32N80P and APT8030JVFR?

A: Both parts meet the 800V voltage and SOT-227B package requirements. The IXFN32N80P offers higher continuous drain current (29A vs. 25A) and lower gate charge (150nC vs. 510nC), resulting in faster switching. The APT8030JVFR is a Microchip alternative with equivalent on-state resistance but higher gate charge. Selection depends on current requirements and switching frequency demands.

Q: Why is the IXFN27N80 marked "Not For New Designs"?

A: This designation indicates the part has been superseded in the manufacturer's product portfolio. While existing inventory remains available, IXYS recommends using the IXFN32N80P for new designs. The IXFN32N80P provides superior performance and guaranteed long-term support.

Q: Are all three parts ROHS3 compliant?

A: Yes. The IXFN27N80, IXFN32N80P, and APT8030JVFR are all ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements.

Q: Does package type differ between these parts?

A: All three parts use the SOT-227-4 miniBLOC package with chassis mount configuration. The APT8030JVFR is designated as ISOTOP®, which is a Microchip variant of the miniBLOC standard. Pin compatibility and thermal characteristics remain equivalent for direct substitution.

Q: What thermal considerations apply when substituting these parts?

A: The IXFN32N80P provides 625W maximum power dissipation compared to 520W for the IXFN27N80, offering improved thermal headroom. The APT8030JVFR has lower continuous current (25A), which may reduce power dissipation in current-limited circuits. Verify that heatsink and thermal interface materials are adequate for the selected part's power rating.

Q: Can the APT8030JVFR be used in high-frequency switching applications?

A: The APT8030JVFR has higher gate charge (510nC vs. 400nC for IXFN27N80 and 150nC for IXFN32N80P). In high-frequency applications, this results in increased switching losses and slower turn-on/turn-off times. Verify switching frequency compatibility through thermal and efficiency analysis before selection.