IXFN26N90 Equivalent & Substitute Parts

Part Overview

The IXFN26N90 is an N-Channel MOSFET rated for 900V drain-to-source voltage with 26A continuous drain current at 25°C. This device is housed in a SOT-227B chassis mount package and is part of the IXYS HiPerFET™ series. The IXFN26N90 carries a "Not For New Designs" product status, indicating that IXYS has discontinued active development and support for this model. Identifying equivalent and substitute parts is necessary to ensure design continuity, maintain supply chain reliability, and access devices with active manufacturer support.

Substiute Parts

IXFN26N90

IXYSIn Stock: 3986IXFN26N90 Datasheet

Current PartRFQ

IXFN40N90P

IXYSIn Stock: 936IXFN40N90P Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFN26N90 is determined by strict alignment of the following electrical and mechanical parameters:

Critical Matching Parameters:

• Drain to Source Voltage (Vdss): Must equal or exceed 900V
• Package Type: Must be SOT-227B (miniBLOC) chassis mount
• FET Type: Must be N-Channel MOSFET
• Operating Temperature Range: Must support -55°C to 150°C (TJ)

Performance Parameters (Allowable Variation):

• Continuous Drain Current (Id): Substitute must meet or exceed 26A at 25°C
• On-State Resistance (Rds On): Lower values are acceptable (improved performance)
• Power Dissipation: Equal or higher ratings are acceptable
• Gate Charge (Qg): Lower values are acceptable (improved switching characteristics)

The IXFN40N90P qualifies as a direct substitute based on these criteria. It maintains the same 900V Vdss rating, identical SOT-227B package, and N-Channel MOSFET technology. The substitute provides enhanced performance through higher continuous drain current (33A vs. 26A), lower on-state resistance (210 mOhm vs. 300 mOhm), and increased power dissipation capability (695W vs. 600W).

Parameter Comparison

Engineering Selection Recommendations

IXFN40N90P as Primary Substitute:

The IXFN40N90P is the qualified substitute for the IXFN26N90. Both devices are manufactured by IXYS and share identical voltage ratings (900V Vdss), package configuration (SOT-227B miniBLOC), and operating temperature range (-55°C to 150°C).

The IXFN40N90P holds Active product status, ensuring ongoing manufacturer support, availability, and compliance with current industry standards. Both parts maintain ROHS3 compliance and REACH unaffected status, satisfying regulatory requirements for new designs and production environments.

The substitute provides performance improvements across multiple parameters: higher continuous drain current (33A vs. 26A), reduced on-state resistance (210 mOhm vs. 300 mOhm at higher current), and increased power dissipation capability (695W vs. 600W). These enhancements result in lower conduction losses and improved thermal performance in equivalent circuit applications.

The IXFN40N90P is supplied in Tube packaging with Moisture Sensitivity Level 1 (Unlimited), indicating standard handling requirements suitable for production environments.

Frequently Asked Questions (FAQ)

Q: Can the IXFN40N90P directly replace the IXFN26N90 in existing designs?

A: Yes. Both devices share identical voltage ratings (900V Vdss), package type (SOT-227B miniBLOC), and operating temperature range (-55°C to 150°C). The IXFN40N90P provides equal or superior performance across all critical parameters. No circuit modifications are required for mechanical or electrical compatibility.

Q: What are the key differences between these two parts?

A: The IXFN40N90P provides higher continuous drain current (33A vs. 26A), lower on-state resistance (210 mOhm vs. 300 mOhm), and greater power dissipation capability (695W vs. 600W). The IXFN40N90P also supports higher gate voltage (±30V vs. ±20V) and has slightly higher input capacitance (14000 pF vs. 10800 pF). The IXFN26N90 is marked "Not For New Designs," while the IXFN40N90P maintains Active product status.

Q: Are there any thermal or mounting considerations when substituting?

A: Both parts use identical SOT-227B chassis mount packaging. Thermal interface materials, mounting hardware, and heatsink requirements remain unchanged. The IXFN40N90P's lower on-state resistance may reduce junction temperature in high-current applications, potentially improving thermal margins.

Q: Do both parts meet the same compliance standards?

A: Yes. Both the IXFN26N90 and IXFN40N90P are ROHS3 compliant and REACH unaffected. Regulatory compliance is maintained across the substitution.

Q: What is the significance of the "Not For New Designs" status on the IXFN26N90?

A: This status indicates that IXYS has discontinued active development and support for the IXFN26N90. The part may experience supply constraints or eventual discontinuation. The IXFN40N90P, with Active status, ensures long-term availability and manufacturer support for new and ongoing production.

Q: Are gate drive requirements different between these parts?

A: Both parts operate with 10V drive voltage for maximum on-state resistance specification. The IXFN40N90P supports a wider gate voltage range (±30V vs. ±20V), providing additional design flexibility. Gate charge values are comparable (230 nC vs. 240 nC), resulting in similar switching characteristics and gate drive circuit requirements.