IXFN26N120P N-Channel 1200V 23A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFN26N120P is an N-Channel 1200V 23A MOSFET manufactured by IXYS in the HiPerFET™ series. This device is rated for 695W maximum power dissipation and features a SOT-227B chassis mount package. The part is currently Active in product status with 757 units in stock.

Equivalent and substitute parts are identified when alternative MOSFETs meet the functional requirements of high-voltage switching applications while maintaining compatibility with circuit design parameters. Substitutes are selected based on matching or exceeding critical electrical specifications including drain-source voltage rating, continuous drain current, on-state resistance, and thermal characteristics.

Substiute Parts

IXFN26N120P

IXYSIn Stock: 790IXFN26N120P Datasheet

Current PartRFQ

APT10045JLL

Microchip TechnologyIn Stock: 1484APT10045JLL Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IXFN26N120P are identified based on the following critical parameters:

Voltage Rating Compatibility: The main part operates at 1200V Vdss. Substitute parts must maintain voltage ratings sufficient for the application circuit. A lower voltage rating indicates reduced voltage headroom and may not be suitable for all 1200V circuit designs.

Current Handling Capability: The 23A continuous drain current at 25°C establishes the minimum current capacity required. Substitute parts with equal or greater current ratings ensure thermal and electrical performance equivalence.

On-State Resistance (Rds On): The 460 mOhm specification at 13A and 10V gate voltage directly impacts power dissipation and switching losses. Comparable or lower Rds On values maintain or improve efficiency.

Thermal Performance: The 695W maximum power dissipation rating and -55°C to 150°C operating temperature range define the thermal envelope. Substitute parts must support equivalent or superior thermal characteristics.

Package and Mounting: Both the main part and substitutes utilize chassis mount configurations in SOT-227-4 miniBLOC packages, ensuring mechanical and thermal interface compatibility.

Compliance and Status: All parts must maintain Active product status and comply with RoHS3, REACH, and MSL requirements.

Parameter Comparison

Engineering Selection Recommendations

IXFN26N120P (Primary Part): This part is the specified component and remains the first choice for designs requiring 1200V voltage rating with 23A continuous current capacity. The higher Vdss rating provides additional voltage margin in high-voltage switching applications. Active product status and full RoHS3 compliance support long-term availability and regulatory requirements.

APT10045JLL (Substitute Part): This Microchip Technology MOSFET is suitable for applications where the circuit voltage does not exceed 1000V. The APT10045JLL delivers comparable on-state resistance (450 mOhm vs. 460 mOhm) and slightly lower continuous current (21A vs. 23A). The reduced gate charge (154 nC vs. 225 nC) and input capacitance (4350 pF vs. 14000 pF) result in faster switching characteristics and lower gate drive power requirements. Both parts maintain identical operating temperature ranges and compliance certifications. The APT10045JLL is appropriate for substitution only in circuits designed for 1000V operation or lower.

Compliance and Availability: Both parts are Active in product status, RoHS3 compliant, REACH unaffected, and carry MSL rating 1 (unlimited moisture sensitivity). Both are available in production quantities.

Frequently Asked Questions (FAQ)

Q: Can the APT10045JLL replace the IXFN26N120P in all applications?

A: No. The APT10045JLL has a maximum Vdss rating of 1000V compared to the IXFN26N120P's 1200V rating. Substitution is only valid for circuits designed to operate at 1000V or lower. Applications requiring the full 1200V voltage margin must use the IXFN26N120P.

Q: What are the key differences in switching performance between these parts?

A: The APT10045JLL exhibits lower gate charge (154 nC vs. 225 nC) and significantly lower input capacitance (4350 pF vs. 14000 pF). These characteristics result in faster switching transitions and reduced gate drive power consumption. The on-state resistance values are comparable (450 mOhm vs. 460 mOhm).

Q: Are the packages mechanically compatible?

A: Yes. Both the IXFN26N120P and APT10045JLL use SOT-227-4 miniBLOC chassis mount packages. Mechanical and thermal interface compatibility is maintained, allowing direct board-level substitution where electrical specifications permit.

Q: Do both parts meet the same compliance requirements?

A: Yes. Both parts are RoHS3 compliant, REACH unaffected, carry MSL rating 1 (unlimited), and maintain identical operating temperature ranges of -55°C to 150°C. Both are Active in product status.

Q: What is the continuous current difference between these parts?

A: The IXFN26N120P is rated for 23A continuous drain current at 25°C, while the APT10045JLL is rated for 21A. This 2A difference may be significant in high-current applications operating near thermal limits.

Q: How do the power dissipation ratings compare?

A: The IXFN26N120P is rated for 695W maximum power dissipation, while the APT10045JLL is rated for 460W. The higher rating on the main part reflects its higher current capacity and voltage rating. Thermal design calculations must account for these differences.

Q: Can I use the APT10045JLL in a 1200V circuit if I derate the voltage?

A: No. The APT10045JLL's absolute maximum Vdss rating is 1000V. Using this part in a circuit designed for 1200V operation violates the device's electrical specifications regardless of actual operating voltage, creating risk of device failure and circuit damage.