IXFN260N17T Equivalent & Substitute Parts

Part Overview

The IXFN260N17T is an N-Channel MOSFET rated for 170V drain-to-source voltage with a continuous drain current of 245A at 25°C. This device is packaged in a SOT-227B chassis mount configuration and is part of the GigaMOS™ series. The part is currently listed as obsolete, making identification of suitable substitute components necessary for ongoing design support and procurement planning.

Substiute Parts

IXFN260N17T

IXYSIn Stock: 982IXFN260N17T Datasheet

Current PartRFQ

IXFN320N17T2

IXYSIn Stock: 920IXFN320N17T2 Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFN260N17T is determined by the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: The substitute part must maintain the same 170V drain-to-source voltage rating to ensure safe operation within the intended circuit application.

Current Handling Capability: The substitute must support continuous drain current at or above 245A at 25°C to meet or exceed the original part's current capacity.

On-State Resistance (Rds On): The substitute's maximum on-state resistance must not exceed the original specification to maintain thermal performance and power efficiency characteristics.

Gate Charge (Qg): The substitute's gate charge must remain within acceptable limits to preserve gate drive circuit compatibility and switching performance.

Package and Mounting: The substitute must use the identical SOT-227B package with chassis mount configuration to ensure mechanical and thermal interface compatibility.

Operating Temperature Range: The substitute must support the full -55°C to 175°C operating temperature range.

The IXFN320N17T2 meets all these criteria and is identified as a direct substitute for the obsolete IXFN260N17T.

Parameter Comparison

Engineering Selection Recommendations

The IXFN320N17T2 is the identified substitute for the obsolete IXFN260N17T based on the following factors:

Product Status: The IXFN260N17T is obsolete, while the IXFN320N17T2 is active and available in production quantities (823 pieces in stock).

Electrical Compatibility: Both devices share identical voltage ratings (170V Vdss) and operating temperature ranges (-55°C to 175°C). The IXFN320N17T2 provides higher continuous drain current (260A versus 245A), ensuring it can handle the original part's current requirements with margin.

Thermal Performance: The IXFN320N17T2 exhibits lower on-state resistance (5.2 mOhm versus 6.5 mOhm at 60A, 10V), resulting in improved thermal efficiency and reduced power dissipation in the application.

Compliance and Certifications: The IXFN320N17T2 is RoHS3 compliant and maintains REACH unaffected status, consistent with the original part's regulatory standing.

Package Compatibility: Both devices use identical SOT-227B chassis mount packaging, ensuring direct mechanical and thermal interface compatibility without PCB redesign.

Gate Drive Considerations: The IXFN320N17T2 exhibits higher gate charge (640 nC versus 400 nC) and input capacitance (45000 pF versus 24000 pF), requiring gate drive circuit verification to ensure adequate drive capability.

Frequently Asked Questions (FAQ)

Q: Can the IXFN320N17T2 directly replace the IXFN260N17T without circuit modifications?

A: The IXFN320N17T2 is electrically and mechanically compatible with the IXFN260N17T. However, the gate drive circuit must be evaluated to confirm it can supply the higher gate charge (640 nC) required by the substitute part. The lower on-state resistance of the substitute may also affect thermal management calculations.

Q: What is the significance of the higher gate charge in the IXFN320N17T2?

A: Gate charge determines the energy required to switch the MOSFET on and off. The IXFN320N17T2 requires 640 nC compared to 400 nC for the original part. Gate drive circuits must supply sufficient current to charge the gate within the required switching time. Insufficient gate drive capability may result in slower switching transitions and increased switching losses.

Q: Are there differences in input capacitance between these parts?

A: Yes. The IXFN320N17T2 has an input capacitance of 45000 pF compared to 24000 pF for the IXFN260N17T. Higher input capacitance increases the gate charge requirement and may affect switching speed and gate drive circuit performance.

Q: Does the lower on-state resistance of the IXFN320N17T2 affect thermal design?

A: The lower on-state resistance (5.2 mOhm versus 6.5 mOhm) reduces conduction losses, which generally improves thermal performance. However, thermal management calculations should be recalculated based on the actual application current and duty cycle to ensure the chassis mount interface remains adequate.

Q: Are both parts available in the same packaging?

A: Yes. Both the IXFN260N17T and IXFN320N17T2 use SOT-227B chassis mount packaging (SOT-227-4, miniBLOC). No PCB layout modifications are required for mechanical compatibility.

Q: What is the difference between the GigaMOS™ and HiPerFET™/TrenchT2™ series designations?

A: These designations indicate different technology generations from IXYS. The IXFN320N17T2 uses newer HiPerFET™ and TrenchT2™ technologies, which provide improved performance characteristics such as lower on-state resistance and higher current capacity compared to the older GigaMOS™ series.

Q: Is the IXFN320N17T2 suitable for all applications using the IXFN260N17T?

A: The IXFN320N17T2 is suitable for applications where the gate drive circuit can supply the required gate charge and where the gate drive timing is compatible with the substitute part's switching characteristics. Applications with marginal gate drive capability or tight switching time requirements require detailed evaluation.