IXFN25N90 Equivalent & Substitute Parts

Part Overview

The IXFN25N90 is an N-Channel MOSFET rated for 900V drain-to-source voltage with 25A continuous drain current at 25°C, housed in a SOT-227B chassis mount package. This device is part of the IXYS HiPerFET™ series and is classified as obsolete. Due to its obsolete status, equivalent and substitute parts are necessary for ongoing design support, production continuity, and system maintenance. Substitute parts must maintain compatibility across critical electrical parameters including voltage rating, current capacity, and thermal characteristics while accommodating packaging and performance variations.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	900	V
Continuous Drain Current (Id) @ 25°C	25	A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs	330	mOhm @ 500mA, 10V
Gate Threshold Voltage (Vgs(th) Max) @ Id	5	V @ 8mA
Power Dissipation (Max)	600	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	SOT-227B	Chassis Mount
FET Type	N-Channel	MOSFET

Substitute Part Grouping Explanation

Substitute parts for the IXFN25N90 are classified into two categories based on electrical parameter alignment:

Direct Substitutes (Same Voltage Class): Parts maintaining the 900V Vdss rating with equal or greater current capacity and compatible package configurations. These substitutes operate within the same voltage class and thermal envelope, allowing direct replacement in applications where the original specification is maintained.

Functional Equivalents (Higher Voltage Class): Parts with elevated Vdss ratings (1200V and above) that exceed the original specification. These parts provide enhanced voltage margin and are suitable for applications requiring upgraded voltage headroom or where system redesign permits higher-rated components.

Critical Parameters for Substitution:

Drain to Source Voltage (Vdss): Must equal or exceed 900V
Continuous Drain Current (Id): Must equal or exceed 25A
Operating Temperature Range: Must encompass -55°C to 150°C
Package Type: SOT-227B or compatible chassis mount configuration
Mounting Type: Chassis Mount

Parameter Comparison

Parameter	IXFN25N90	IXFN40N90P	APT32F120J
Manufacturer	IXYS	IXYS	Microchip Technology
Drain to Source Voltage (Vdss)	900 V	900 V	1200 V
Continuous Drain Current (Id) @ 25°C	25 A (Tc)	33 A (Tc)	33 A (Tc)
Rds On (Max) @ Id, Vgs	330 mOhm @ 500mA, 10V	210 mOhm @ 20A, 10V	320 mOhm @ 25A, 10V
Gate Threshold Voltage (Vgs(th) Max) @ Id	5 V @ 8mA	6.5 V @ 1mA	5 V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs	240 nC @ 10 V	230 nC @ 10 V	560 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	10800 pF @ 25 V	14000 pF @ 25 V	18200 pF @ 25 V
Power Dissipation (Max)	600 W (Tc)	695 W (Tc)	960 W (Tc)
Operating Temperature Range	-55 to 150 °C (TJ)	-55 to 150 °C (TJ)	-55 to 150 °C (TJ)
Package Type	SOT-227B	SOT-227B	ISOTOP®
Mounting Type	Chassis Mount	Chassis Mount	Chassis Mount
Product Status	Obsolete	Active	Active
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IXFN40N90P (Direct Substitute - Same Voltage Class):

The IXFN40N90P is an active product from IXYS within the same HiPerFET™ series, maintaining the 900V Vdss rating with increased current capacity (33A versus 25A). This part is ROHS3 compliant and offers improved on-state resistance (210 mOhm versus 330 mOhm), resulting in lower conduction losses. The SOT-227B package is identical to the original part, enabling direct mechanical and thermal compatibility. Gate charge remains comparable (230 nC versus 240 nC), supporting equivalent drive circuit requirements. This substitute is suitable for applications requiring direct replacement with performance enhancement.

APT32F120J (Functional Equivalent - Higher Voltage Class):

The APT32F120J is an active product from Microchip Technology rated for 1200V Vdss, exceeding the original 900V specification by 33%. This part is ROHS3 compliant and provides 33A continuous drain current with enhanced power dissipation capability (960W versus 600W). The ISOTOP® package differs from the SOT-227B, requiring mechanical and thermal redesign considerations. Gate charge is significantly higher (560 nC versus 240 nC), necessitating drive circuit evaluation. This substitute is applicable to applications where elevated voltage margin is required or where system redesign accommodates the alternative package configuration.

Product Status Consideration:

Both substitute parts maintain active product status, ensuring long-term availability and manufacturing support. The IXFN25N90 obsolete status necessitates transition to one of these active alternatives for new designs and ongoing production requirements.

Frequently Asked Questions (FAQ)

Q: Can the IXFN40N90P directly replace the IXFN25N90 without circuit modification?

A: The IXFN40N90P maintains identical voltage rating (900V), package type (SOT-227B), and operating temperature range (-55°C to 150°C). The increased current rating (33A versus 25A) and improved on-state resistance (210 mOhm versus 330 mOhm) are compatible with applications designed for the original part. Gate charge similarity (230 nC versus 240 nC) supports equivalent drive circuit operation. Direct replacement is permissible within the original application envelope.

Q: What are the key differences between the IXFN40N90P and APT32F120J?

A: The IXFN40N90P maintains the 900V voltage class with SOT-227B packaging, while the APT32F120J operates at 1200V with ISOTOP® packaging. The APT32F120J exhibits significantly higher gate charge (560 nC versus 230 nC) and input capacitance (18200 pF versus 14000 pF), requiring drive circuit reassessment. The APT32F120J provides enhanced power dissipation (960W versus 695W) and is suitable for applications requiring voltage margin upgrade or thermal performance enhancement.

Q: Is the ISOTOP® package compatible with SOT-227B mounting locations?

A: The ISOTOP® package and SOT-227B package are distinct mechanical configurations. While both are chassis mount types, they require different PCB footprints and mounting hardware. Direct mechanical substitution is not possible without PCB redesign and thermal management system modification. The APT32F120J requires dedicated layout and mounting consideration.

Q: What compliance certifications apply to substitute parts?

A: The IXFN40N90P and APT32F120J are both ROHS3 compliant and REACH unaffected. Both parts carry EAR99 ECCN classification and 8541.29.0095 HTSUS code, matching the original part's regulatory status. Moisture sensitivity level is 1 (Unlimited) for all three parts.

Q: How does on-state resistance affect thermal performance in substitution?

A: On-state resistance directly influences conduction losses and thermal dissipation. The IXFN40N90P exhibits lower Rds On (210 mOhm versus 330 mOhm), reducing conduction losses and heat generation. The APT32F120J maintains comparable Rds On (320 mOhm) with significantly higher power dissipation rating (960W), accommodating higher thermal loads. Thermal design must account for these resistance variations and the respective power dissipation capabilities.

Q: What gate charge considerations apply when substituting these parts?

A: Gate charge affects drive circuit design and switching speed. The IXFN40N90P maintains similar gate charge (230 nC versus 240 nC), supporting equivalent drive circuit operation. The APT32F120J exhibits substantially higher gate charge (560 nC), requiring increased drive current or extended switching times. Drive circuit evaluation is necessary when selecting the APT32F120J to ensure adequate gate charge delivery and switching performance.

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