IXFN24N100 Equivalent & Substitute Parts

Part Overview

The IXFN24N100 is an N-Channel 1000 V, 24 A continuous drain current MOSFET manufactured by IXYS in the HiPerFET™ series. This device is housed in a SOT-227B chassis mount package and is rated for 568 W maximum power dissipation. The part is marked as "Not For New Designs," indicating it has been superseded in the manufacturer's product roadmap. Equivalent and substitute parts are necessary for applications requiring continued sourcing, design flexibility, or performance optimization within the same electrical and mechanical parameter space.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	1000	V
Continuous Drain Current (Id) @ 25°C	24	A (Tc)
On-State Resistance (Rds On Max)	390	mOhm @ 12A, 10V
Gate Threshold Voltage (Vgs(th) Max)	5.5	V @ 8mA
Gate Charge (Qg Max)	267	nC @ 10V
Input Capacitance (Ciss Max)	8700	pF @ 25V
Power Dissipation (Max)	568	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	SOT-227B (miniBLOC)	Chassis Mount
Gate Voltage (Vgs Max)	±20	V

Substitute Part Grouping Explanation

Substitution eligibility for the IXFN24N100 is determined by the following critical parameters:

Electrical Compatibility Criteria:

Drain to Source Voltage (Vdss) must equal or exceed 1000 V
Continuous Drain Current (Id) must be equal to or greater than 24 A
On-State Resistance (Rds On) must not exceed the maximum specified value to maintain thermal performance
Gate Threshold Voltage (Vgs(th)) must be compatible with existing gate drive circuitry
Operating Temperature Range must encompass -55°C to 150°C

Mechanical Compatibility Criteria:

Package type must be SOT-227B (miniBLOC) or equivalent chassis mount configuration
Mounting type must be Chassis Mount
Pin configuration must support direct replacement

Compliance Criteria:

RoHS3 Compliance required
REACH Unaffected status required
EAR99 classification maintained

The substitute parts listed below meet these criteria within the allowed parameter tolerances for direct or near-direct substitution in applications designed for the IXFN24N100.

Parameter Comparison

Parameter	IXFN24N100	IXFN32N100P	APT22F100J	Unit
Manufacturer	IXYS	IXYS	Microchip Technology	—
Drain to Source Voltage (Vdss)	1000	1000	1000	V
Continuous Drain Current (Id) @ 25°C	24	27	23	A (Tc)
On-State Resistance (Rds On Max)	390 @ 12A, 10V	320 @ 16A, 10V	380 @ 18A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max)	5.5 @ 8mA	6.5 @ 1mA	Not Specified	V
Gate Charge (Qg Max)	267 @ 10V	225 @ 10V	305 @ 10V	nC
Input Capacitance (Ciss Max)	8700 @ 25V	14200 @ 25V	9835 @ 25V	pF
Power Dissipation (Max)	568	690	545	W (Tc)
Operating Temperature Range	-55 to 150	-55 to 150	-55 to 150	°C (TJ)
Package Type	SOT-227B	SOT-227B	ISOTOP®	—
Gate Voltage (Vgs Max)	±20	±30	±30	V
Product Status	Not For New Designs	Active	Active	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

IXFN32N100P (IXYS)

The IXFN32N100P is an active product from the same manufacturer and series (HiPerFET™). It provides superior electrical performance with 27 A continuous drain current, lower on-state resistance (320 mOhm), and higher power dissipation capability (690 W). The device maintains the same 1000 V Vdss rating and operating temperature range. The SOT-227B package ensures mechanical compatibility. The IXFN32N100P is suitable for applications where the IXFN24N100 is being phased out, offering improved thermal performance and current handling. Gate voltage rating increases to ±30 V, providing additional design margin.

APT22F100J (Microchip Technology)

The APT22F100J is an active product from Microchip Technology in the POWER MOS 8™ series. It delivers 23 A continuous drain current and maintains the 1000 V Vdss specification. On-state resistance is 380 mOhm, comparable to the IXFN24N100. The ISOTOP® package provides equivalent thermal performance to SOT-227B in chassis mount applications. This device is suitable for direct replacement in existing designs where cross-manufacturer sourcing is acceptable. Gate voltage rating is ±30 V. Power dissipation is rated at 545 W, slightly lower than the IXFN24N100 but adequate for most applications within the current range.

Both substitute parts maintain full RoHS3 compliance, REACH unaffected status, and EAR99 classification, ensuring regulatory continuity.

Frequently Asked Questions (FAQ)

Q: Can the IXFN32N100P directly replace the IXFN24N100 in existing designs?

A: The IXFN32N100P is mechanically and electrically compatible for direct replacement. Both devices use the SOT-227B package and share identical Vdss (1000 V) and operating temperature range (-55°C to 150°C). The IXFN32N100P offers higher current capability (27 A vs. 24 A) and lower on-state resistance, making it a superior substitute. Gate drive circuitry designed for ±20 V operation will function with the IXFN32N100P, which is rated for ±30 V.

Q: What are the key differences between the IXFN32N100P and APT22F100J?

A: Both devices meet the 1000 V Vdss and -55°C to 150°C operating temperature requirements. The IXFN32N100P offers higher continuous drain current (27 A) and lower on-state resistance (320 mOhm), resulting in superior thermal performance and higher power dissipation capability (690 W). The APT22F100J provides 23 A current and 380 mOhm resistance. The IXFN32N100P uses SOT-227B packaging, while the APT22F100J uses ISOTOP® packaging. Both are active products with full compliance certifications.

Q: Is the ISOTOP® package equivalent to SOT-227B for thermal performance?

A: Both ISOTOP® and SOT-227B are chassis mount packages designed for high-power applications. The APT22F100J in ISOTOP® packaging provides equivalent thermal mounting capability to the SOT-227B. However, PCB layout and thermal interface design must be verified for the specific application to ensure adequate heat dissipation.

Q: Why is the IXFN24N100 marked "Not For New Designs"?

A: This status indicates the manufacturer has superseded the part in their product roadmap. The IXFN32N100P is the recommended active alternative from IXYS, offering improved performance characteristics. Existing inventory remains available for legacy system support.

Q: Are there any gate drive circuit modifications required when substituting these parts?

A: The IXFN24N100 is rated for ±20 V gate voltage. Both substitute parts are rated for ±30 V, providing additional design margin. Existing gate drive circuits designed for ±20 V operation will function correctly with either substitute. No circuit modifications are required.

Q: What is the impact of higher input capacitance (Ciss) in the IXFN32N100P?

A: The IXFN32N100P has higher input capacitance (14200 pF vs. 8700 pF), which increases gate charge requirements. Gate drive circuits must supply sufficient current to charge the gate within the required switching time. For most applications, standard gate drivers rated for 1000 V MOSFETs will accommodate this difference without modification.

Q: Can the APT22F100J be used in applications requiring the full 24 A continuous current?

A: The APT22F100J is rated for 23 A continuous drain current, which is marginally below the IXFN24N100 specification of 24 A. For applications requiring sustained operation at or above 24 A, the IXFN32N100P (27 A rating) is the preferred substitute. The APT22F100J is suitable for applications operating below 23 A continuous current.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message