IXFN21N100Q Equivalent & Substitute Parts

Part Overview

The IXFN21N100Q is an N-Channel MOSFET rated for 1000V drain-to-source voltage with a continuous drain current of 21A at 25°C. This device is manufactured by IXYS and belongs to the HiPerFET™ Q Class series. The component is housed in a SOT-227B chassis mount package and is classified as Active product status with full RoHS3 compliance.

Substitute parts are identified when equivalent electrical performance can be achieved within the same voltage class, package family, and thermal operating range while maintaining compatibility with existing circuit designs and PCB layouts.

Substiute Parts

IXFN21N100Q

IXYSIn Stock: 1973IXFN21N100Q Datasheet

Current PartRFQ

IXFN32N100Q3

IXYSIn Stock: 1262IXFN32N100Q3 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IXFN21N100Q is determined by the following criteria:

Mandatory Matching Parameters:

• Drain to Source Voltage (Vdss): 1000V
• Package Type: SOT-227B (miniBLOC) chassis mount configuration
• FET Type: N-Channel MOSFET
• Operating Temperature Range: -55°C to 150°C (TJ)
• Mounting Type: Chassis Mount

Allowable Variation Parameters:

• Continuous Drain Current (Id): Equal to or greater than 21A
• On-State Resistance (Rds On): Equal to or lower than specified values
• Power Dissipation: Equal to or greater than 520W
• Gate Charge (Qg): May vary within device series specifications
• Input Capacitance (Ciss): May vary within device series specifications

The IXFN32N100Q3 qualifies as a substitute part because it maintains identical voltage rating, package configuration, and thermal operating range while providing enhanced current handling capability and reduced on-state resistance.

Parameter Comparison

Engineering Selection Recommendations

IXFN21N100Q Primary Selection: Select the IXFN21N100Q when circuit design specifications require exactly 21A continuous drain current capability with 500 mOhm on-state resistance at the specified gate voltage. This device is Active status with full RoHS3 compliance and REACH unaffected designation, confirming regulatory compliance for industrial and commercial applications.

IXFN32N100Q3 Substitute Selection: The IXFN32N100Q3 serves as a direct substitute when higher current capacity (28A continuous drain current) or lower on-state resistance (320 mOhm) is required within the same 1000V voltage class. Both devices maintain identical package configuration (SOT-227B), thermal operating range (-55°C to 150°C), and regulatory compliance status. The IXFN32N100Q3 provides enhanced power dissipation capability (780W versus 520W), making it suitable for applications requiring thermal margin or higher current throughput.

Both parts are manufactured by IXYS, classified as Active products, and comply with RoHS3 and REACH requirements. Selection between these devices depends on circuit current requirements and thermal design constraints rather than regulatory or compatibility considerations.

Frequently Asked Questions (FAQ)

Q: Can the IXFN32N100Q3 be used as a direct replacement for the IXFN21N100Q in existing designs?

A: Yes. Both devices share identical drain-to-source voltage (1000V), package type (SOT-227B miniBLOC), mounting configuration (chassis mount), and operating temperature range (-55°C to 150°C). The IXFN32N100Q3 provides higher current capacity and lower on-state resistance, making it electrically compatible for direct substitution. PCB layout and thermal management design remain unchanged.

Q: What is the primary difference between these two parts?

A: The IXFN32N100Q3 provides 28A continuous drain current compared to 21A for the IXFN21N100Q, with correspondingly lower on-state resistance (320 mOhm versus 500 mOhm) and higher power dissipation rating (780W versus 520W). Both devices operate at identical voltage ratings and use the same package.

Q: Are there any gate drive voltage differences between these parts?

A: Both devices use 10V as the drive voltage for maximum on-state resistance specification. The IXFN32N100Q3 has a higher maximum gate voltage rating (±30V versus ±20V) and slightly higher gate threshold voltage (6.5V @ 8mA versus 5V @ 4mA).

Q: Do these parts have the same moisture sensitivity classification?

A: Yes. Both the IXFN21N100Q and IXFN32N100Q3 are classified as MSL 1 (Unlimited), indicating no moisture sensitivity restrictions for storage or handling.

Q: Are both parts RoHS3 compliant?

A: Yes. Both devices are ROHS3 compliant and REACH unaffected, confirming compliance with current environmental and hazardous substance regulations.

Q: What is the difference in input capacitance between these devices?

A: The IXFN32N100Q3 has higher input capacitance (9940 pF @ 25V) compared to the IXFN21N100Q (5900 pF @ 25V). This difference reflects the higher current rating and may affect gate drive circuit design in high-frequency switching applications.

Q: Can the IXFN21N100Q be used as a substitute for the IXFN32N100Q3?

A: No. The IXFN21N100Q has lower current capacity (21A versus 28A) and higher on-state resistance (500 mOhm versus 320 mOhm). Substitution in the reverse direction would result in insufficient current handling and increased power dissipation in the circuit.