IXFN200N07 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IXFN200N07 is an N-Channel MOSFET manufactured by IXYS in the HiPerFET™ series, rated for 70V drain-to-source voltage with 200A continuous drain current at 25°C. The device is housed in a SOT-227B chassis mount package and dissipates up to 520W at the case temperature. This part carries a "Not For New Designs" product status, indicating it has been superseded in the manufacturer's product line. Identifying equivalent and substitute parts is necessary for ongoing maintenance, repair, and legacy system support where the original specification must be maintained or where improved performance characteristics are acceptable.

Key Parameters

Parameter	IXFN200N07
Drain-to-Source Voltage (Vdss)	70 V
Continuous Drain Current (Id) @ 25°C	200 A
On-State Resistance (Rds On) @ 500mA, 10V	6 mOhm
Gate Threshold Voltage (Vgs(th)) @ 8mA	4 V
Gate Charge (Qg) @ 10V	480 nC
Input Capacitance (Ciss) @ 25V	9000 pF
Power Dissipation (Max)	520 W
Operating Temperature Range	-55°C to 150°C
Package Type	SOT-227B (miniBLOC)
Mounting Type	Chassis Mount

Substitute Part Grouping Explanation

Substitution of the IXFN200N07 is determined by the following critical parameters:

Mandatory Compatibility Criteria:

Package type: SOT-227B (miniBLOC) chassis mount configuration
FET type: N-Channel MOSFET technology
Continuous drain current: 200A minimum at 25°C
Drain-to-source voltage: Equal to or greater than 70V
Gate drive voltage: 10V maximum Rds On specification
Operating temperature range: Minimum -55°C to 150°C

Substitution Logic: Parts that meet or exceed the voltage and current ratings while maintaining the same package footprint and mounting configuration are considered functional equivalents. Improvements in on-state resistance, gate charge, and maximum operating temperature are acceptable enhancements. Parts with lower voltage ratings or reduced current capacity are not suitable substitutes.

Parameter Comparison

Parameter	IXFN200N07	IXFN200N10P	IXFN240N15T2	IXTN200N10T
Manufacturer	IXYS	IXYS	IXYS	IXYS
Drain-to-Source Voltage (Vdss)	70 V	100 V	150 V	100 V
Continuous Drain Current (Id) @ 25°C	200 A	200 A	240 A	200 A
On-State Resistance (Rds On) @ 10V	6 mOhm	7.5 mOhm	5.2 mOhm	5.5 mOhm
Gate Threshold Voltage (Vgs(th))	4 V	5 V	5 V	4.5 V
Gate Charge (Qg) @ 10V	480 nC	235 nC	460 nC	152 nC
Input Capacitance (Ciss) @ 25V	9000 pF	7600 pF	32000 pF	9400 pF
Power Dissipation (Max)	520 W	680 W	830 W	550 W
Operating Temperature Range	-55°C to 150°C	-55°C to 175°C	-55°C to 175°C	-55°C to 175°C
Package Type	SOT-227B	SOT-227B	SOT-227B	SOT-227B
Mounting Type	Chassis Mount	Chassis Mount	Chassis Mount	Chassis Mount
Product Status	Not For New Designs	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IXFN200N10P: This part is a direct functional substitute for the IXFN200N07 in applications operating at or below 70V. The IXFN200N10P maintains the 200A continuous drain current rating and SOT-227B package configuration. It provides a higher voltage rating (100V), improved gate charge characteristics (235 nC versus 480 nC), and an extended operating temperature range to 175°C. The part carries Active product status and ROHS3 compliance. The slightly higher on-state resistance (7.5 mOhm versus 6 mOhm) results in marginally increased power dissipation but remains within acceptable thermal limits for the package.

IXFN240N15T2: This part offers enhanced performance with higher voltage (150V) and current (240A) ratings. The IXFN240N15T2 features superior on-state resistance (5.2 mOhm) and higher power dissipation capability (830W). It is suitable for applications requiring higher voltage headroom or increased current capacity. The significantly higher input capacitance (32000 pF) may affect gate drive circuit design. This part carries Active product status and ROHS3 compliance with extended temperature range to 175°C.

IXTN200N10T: This part maintains the 200A continuous drain current and 100V voltage rating with improved on-state resistance (5.5 mOhm) and significantly reduced gate charge (152 nC). The Trench technology series offers faster switching characteristics suitable for high-frequency applications. It carries Active product status, ROHS3 compliance, and extended operating temperature range to 175°C. The lower gate charge reduces driver power requirements and improves switching efficiency.

All three substitute parts are ROHS3 compliant, REACH unaffected, and carry Active product status, making them suitable for new designs and ongoing production support.

Frequently Asked Questions (FAQ)

Q: Can the IXFN200N07 be directly replaced with IXFN200N10P in existing designs?

A: Yes, the IXFN200N10P is a direct replacement for applications operating at 70V or below. Both parts maintain identical 200A continuous drain current and SOT-227B package configuration. The IXFN200N10P provides improved performance with lower gate charge and extended temperature range. No circuit modifications are required.

Q: What is the primary difference between IXFN200N10P and IXTN200N10T?

A: Both parts share 100V voltage rating and 200A current rating in SOT-227B packages. The IXTN200N10T uses Trench technology with significantly lower gate charge (152 nC versus 235 nC), resulting in faster switching and reduced driver power consumption. The IXFN200N10P uses HiPerFET™ technology with slightly higher on-state resistance. Selection depends on whether gate drive efficiency or conduction loss is the primary design constraint.

Q: Is the IXFN240N15T2 suitable as a substitute if my application operates at 70V?

A: Yes, the IXFN240N15T2 is electrically compatible at 70V operation. The 150V rating provides additional voltage margin. However, the significantly higher input capacitance (32000 pF versus 9000 pF) requires gate drive circuit evaluation to ensure adequate drive current and switching speed. The higher current rating (240A) is not utilized in 70V applications but does not create incompatibility.

Q: What is the impact of on-state resistance differences on thermal performance?

A: On-state resistance directly affects conduction losses. The IXFN200N07 at 6 mOhm dissipates less heat during conduction than IXFN200N10P at 7.5 mOhm. However, all substitute parts maintain power dissipation ratings equal to or exceeding the original part. Thermal design must account for the specific on-state resistance and operating current profile of the selected part.

Q: Are all substitute parts available in the same packaging configuration?

A: Yes, all substitute parts are housed in SOT-227B (miniBLOC) chassis mount packages with identical footprints and mounting interfaces. No PCB layout modifications are required for mechanical compatibility.

Q: What is the significance of the "Not For New Designs" status of the IXFN200N07?

A: This status indicates the manufacturer has superseded this part with newer alternatives. The IXFN200N07 remains available for legacy system support and repair. For new designs, selection from the Active status parts (IXFN200N10P, IXFN240N15T2, or IXTN200N10T) is recommended to ensure long-term availability and manufacturer support.

Q: How does gate charge affect circuit design?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge (IXTN200N10T at 152 nC) reduces driver power consumption and enables faster switching. Higher gate charge (IXFN200N07 at 480 nC) requires more robust gate drive circuitry but may provide better noise immunity in certain applications. Gate drive circuit must be evaluated for each part selection.

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