IXFN180N07 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IXFN180N07 is an N-Channel MOSFET manufactured by IXYS, rated for 70V drain-to-source voltage with 180A continuous drain current at 25°C. This device is housed in a SOT-227B chassis mount package and is part of the HiPerFET™ series. The IXFN180N07 is classified as obsolete, making identification of suitable substitute components necessary for ongoing design support, production continuity, and system maintenance applications.

Substiute Parts

IXFN180N07

IXYSIn Stock: 928IXFN180N07 Datasheet

Current PartRFQ

IXFN360N10T

IXYSIn Stock: 2153IXFN360N10T Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFN180N07 is determined by compatibility across the following critical parameters:

Mandatory Compatibility Criteria:

• FET Type: N-Channel topology
• Package / Case: SOT-227-4, miniBLOC (physical and thermal interface compatibility)
• Mounting Type: Chassis Mount
• Drain to Source Voltage (Vdss): Equal to or greater than 70V
• Continuous Drain Current (Id): Equal to or greater than 180A at 25°C
• Gate Drive Voltage: 10V nominal operation
• Vgs (Max): ±20V gate voltage rating

The IXFN360N10T qualifies as a substitute component. While it features higher voltage (100V), higher current capability (360A), and improved on-resistance characteristics, it maintains full backward compatibility with the IXFN180N07 across all mandatory criteria. The enhanced specifications provide design margin and performance improvement in applications where the original part is no longer available.

Parameter Comparison

Engineering Selection Recommendations

IXFN360N10T as Primary Substitute:

The IXFN360N10T is the designated substitute for the obsolete IXFN180N07. Selection is based on the following engineering factors:

Product Status & Availability: The IXFN180N07 is classified as obsolete, whereas the IXFN360N10T maintains active product status with confirmed inventory availability (2100 units in stock). This ensures long-term supply chain continuity and design support.

Compliance & Certification: The IXFN360N10T holds RoHS3 compliance certification, whereas the IXFN180N07 does not specify RoHS status. Both components are REACH Unaffected and carry EAR99 ECCN classification. The IXFN360N10T's RoHS3 compliance aligns with current regulatory requirements for electronic components in regulated markets.

Electrical Performance Enhancement: The IXFN360N10T provides superior electrical characteristics within the same package footprint:

• Drain-to-source voltage rating increased from 70V to 100V
• Continuous drain current doubled from 180A to 360A
• On-resistance reduced from 7mOhm to 2.6mOhm at comparable gate drive conditions
• Maximum power dissipation increased from 520W to 830W
• Operating temperature range extended from 150°C to 175°C

These enhancements provide design margin and improved thermal performance in applications previously limited by the IXFN180N07 specifications.

Thermal & Mechanical Compatibility: Both devices utilize identical SOT-227-4 miniBLOC chassis mount packaging, ensuring direct mechanical and thermal interface compatibility without PCB redesign or thermal management modifications.

Frequently Asked Questions (FAQ)

Q: Can the IXFN360N10T directly replace the IXFN180N07 in existing designs?

A: Yes. Both devices share identical SOT-227-4 miniBLOC packaging, chassis mount configuration, and gate drive voltage specifications (10V nominal). The IXFN360N10T's higher voltage and current ratings provide backward compatibility with full design margin. No PCB modifications are required.

Q: What are the key differences between these two MOSFETs?

A: The IXFN360N10T features higher drain-to-source voltage (100V vs. 70V), doubled continuous drain current (360A vs. 180A), significantly lower on-resistance (2.6mOhm vs. 7mOhm), and extended operating temperature range (-55 to 175°C vs. -55 to 150°C). The IXFN360N10T also incorporates Trench technology and holds RoHS3 compliance.

Q: Why is the IXFN180N07 classified as obsolete?

A: The IXFN180N07 is an older generation HiPerFET™ device. IXYS has transitioned to newer technology platforms, including Trench-based MOSFETs like the IXFN360N10T, which offer superior performance characteristics and improved manufacturing efficiency.

Q: Will the higher input capacitance of the IXFN360N10T affect gate drive circuit design?

A: The IXFN360N10T exhibits higher input capacitance (36000 pF vs. 9000 pF at 25V). Gate drive circuits must supply adequate current to charge this capacitance within required switching time windows. Existing gate drive designs should be evaluated for current capability; however, the 10V gate drive voltage specification remains identical.

Q: Are there thermal management considerations when substituting the IXFN360N10T?

A: The IXFN360N10T's lower on-resistance (2.6mOhm vs. 7mOhm) results in reduced conduction losses, improving thermal performance. The identical SOT-227-4 chassis mount package maintains thermal interface compatibility. Applications previously operating near thermal limits may experience improved thermal margins.

Q: What is the moisture sensitivity level for both devices?

A: Both the IXFN180N07 and IXFN360N10T carry MSL 1 (Unlimited) classification, indicating no moisture sensitivity restrictions. Standard handling and storage procedures apply.

Q: Can the IXFN360N10T be used in applications rated for 70V operation?

A: Yes. The IXFN360N10T's 100V Vdss rating exceeds the 70V requirement of applications designed for the IXFN180N07. The device operates safely at 70V with additional voltage margin. Current and power dissipation capabilities also exceed original specifications, providing design margin.