IXFN170N10 Equivalent & Substitute Parts

Part Overview

The IXFN170N10 is an N-Channel MOSFET rated for 100V drain-to-source voltage with 170A continuous drain current at 25°C. This device is housed in a SOT-227B chassis mount package and is part of the IXYS HiPerFET™ series. The part is classified as Not For New Designs, indicating it has been superseded in the manufacturer's product roadmap. Identification of equivalent and substitute parts is necessary for applications requiring continued supply, design updates, or performance optimization within the same electrical and mechanical constraints.

Substiute Parts

IXFN170N10

IXYSIn Stock: 68688IXFN170N10 Datasheet

Current PartRFQ

IXFN180N10

IXYSIn Stock: 1351IXFN180N10 Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFN170N10 is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

• Drain to Source Voltage (Vdss): Must equal or exceed 100V
• Continuous Drain Current (Id): Must meet or exceed 170A at 25°C
• On-State Resistance (Rds On): Must not exceed 10mOhm at specified conditions
• Gate Threshold Voltage (Vgs(th)): Must remain within ±20V maximum gate voltage specification
• Power Dissipation: Must support 600W (Tc) thermal rating
• Operating Temperature: Must span -55°C to 150°C (TJ)

Mechanical Compatibility Criteria:

• Package Type: SOT-227B (miniBLOC) chassis mount configuration
• Mounting Type: Chassis mount only

Regulatory Compliance:

• RoHS3 Compliance required
• Moisture Sensitivity Level (MSL): 1 (Unlimited)

Substitute parts must satisfy all electrical parameters at or above the main part specifications and maintain identical mechanical packaging and mounting configuration.

Parameter Comparison

Engineering Selection Recommendations

IXFN180N10 as Primary Substitute:

The IXFN180N10 qualifies as a direct substitute for the IXFN170N10 based on the following criteria:

1. Electrical Compatibility: The IXFN180N10 exceeds all minimum electrical requirements. It provides 180A continuous drain current, surpassing the 170A specification of the main part. The on-state resistance is reduced to 8mOhm compared to 10mOhm, resulting in lower conduction losses. All voltage ratings (Vdss, Vgs(th), Vgs Max) are identical.

2. Thermal Performance: Both devices maintain 600W maximum power dissipation and identical operating temperature range (-55°C to 150°C TJ), ensuring thermal compatibility in existing designs.

3. Mechanical Compatibility: The IXFN180N10 uses the identical SOT-227B (miniBLOC) chassis mount package, enabling direct physical substitution without PCB layout modifications.

4. Regulatory Compliance: The IXFN180N10 maintains ROHS3 compliance, REACH Unaffected status, and MSL 1 (Unlimited) rating, matching the compliance profile of the original part.

5. Product Status: The IXFN180N10 carries Active product status, ensuring continued availability and manufacturer support, contrasting with the Not For New Designs classification of the IXFN170N10.

Secondary Considerations:

Gate charge (Qg) is reduced from 515nC to 360nC in the IXFN180N10, resulting in faster switching characteristics and reduced gate drive power requirements. Input capacitance (Ciss) decreases from 10300pF to 9100pF, further improving switching performance. These improvements do not introduce incompatibility but enhance overall circuit efficiency.

Frequently Asked Questions (FAQ)

Q: Can the IXFN180N10 directly replace the IXFN170N10 in existing designs?

A: Yes. The IXFN180N10 is electrically and mechanically compatible with the IXFN170N10. Both devices share identical voltage ratings (100V Vdss), identical package type (SOT-227B miniBLOC), and identical mounting configuration (chassis mount). The IXFN180N10 provides higher continuous drain current (180A vs. 170A) and lower on-state resistance (8mOhm vs. 10mOhm), making it a direct upgrade.

Q: What are the key differences between these two parts?

A: The primary differences are continuous drain current (180A vs. 170A), on-state resistance (8mOhm vs. 10mOhm), gate charge (360nC vs. 515nC), and input capacitance (9100pF vs. 10300pF). The IXFN180N10 exhibits superior electrical performance across all these parameters. Product status differs, with IXFN180N10 classified as Active and IXFN170N10 as Not For New Designs.

Q: Are there any thermal or power dissipation concerns when substituting?

A: No. Both devices are rated for identical maximum power dissipation (600W Tc) and identical operating temperature range (-55°C to 150°C TJ). Thermal performance is equivalent.

Q: Does the package type remain the same?

A: Yes. Both the IXFN170N10 and IXFN180N10 use the SOT-227B (miniBLOC) chassis mount package. No PCB layout changes or mechanical modifications are required.

Q: Are both parts RoHS compliant?

A: Yes. Both the IXFN170N10 and IXFN180N10 are ROHS3 compliant with MSL 1 (Unlimited) moisture sensitivity rating and REACH Unaffected status.

Q: Why is the IXFN170N10 classified as Not For New Designs?

A: The Not For New Designs status indicates the manufacturer has superseded this part in their product roadmap. The IXFN180N10, with Active product status, represents the current generation equivalent and is recommended for new design implementations.

Q: Will gate drive circuits require modification when switching to the IXFN180N10?

A: Gate drive circuits do not require modification. Both devices share identical gate threshold voltage (4V @ 8mA) and maximum gate voltage (±20V). The reduced gate charge (360nC vs. 515nC) in the IXFN180N10 may allow for faster switching or reduced gate drive power, but existing circuits will operate without circuit changes.