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IXFN150N15 Equivalent & Substitute Parts
Part Overview
The IXFN150N15 is an N-Channel MOSFET rated for 150V drain-to-source voltage with 150A continuous drain current at 25°C. Manufactured by IXYS as part of the HiPerFET™ series, this device is housed in a SOT-227B chassis mount package and delivers 600W maximum power dissipation. The component is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and procurement planning.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (Vdss) | 150 | V |
| Continuous Drain Current (Id) @ 25°C | 150 | A (Tc) |
| On-State Resistance (Rds On Max) | 12.5 | mOhm @ 75A, 10V |
| Gate Charge (Qg Max) | 360 | nC @ 10V |
| Power Dissipation (Max) | 600 | W (Tc) |
| Operating Temperature Range | -55 to 150 | °C (TJ) |
| Package Type | SOT-227B | Chassis Mount |
Substitute Part Grouping Explanation
Substitution of the IXFN150N15 is determined by strict equivalence across the following critical parameters:
Mandatory Equivalence Criteria:
- Drain-to-Source Voltage (Vdss): 150V
- Continuous Drain Current (Id): 150A at 25°C
- Package Type: SOT-227B chassis mount
- FET Technology: N-Channel MOSFET
Allowable Variation Parameters:
- On-State Resistance (Rds On): Lower values indicate improved performance and are acceptable substitutes
- Gate Charge (Qg): Lower values reduce switching losses and are acceptable substitutes
- Power Dissipation: Higher ratings provide additional thermal margin and are acceptable substitutes
- Operating Temperature Range: Extended ranges are acceptable substitutes
- Product Status: Active status is preferred over obsolete for long-term availability
The IXFN180N15P meets all mandatory equivalence criteria while providing improvements in several performance parameters.
Parameter Comparison
| Parameter | IXFN150N15 | IXFN180N15P | Unit |
|---|---|---|---|
| Manufacturer | IXYS | IXYS | — |
| FET Type | N-Channel | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | — |
| Drain-to-Source Voltage (Vdss) | 150 | 150 | V |
| Continuous Drain Current (Id) @ 25°C | 150 | 150 | A (Tc) |
| Drive Voltage (Max Rds On) | 10 | 10 | V |
| Rds On (Max) | 12.5 | 11 | mOhm |
| Rds On Test Conditions | @ 75A, 10V | @ 90A, 10V | — |
| Gate Charge (Qg Max) | 360 | 240 | nC @ 10V |
| Vgs (Max) | ±20 | ±20 | V |
| Input Capacitance (Ciss Max) | 9100 | 7000 | pF @ 25V |
| Power Dissipation (Max) | 600 | 680 | W (Tc) |
| Operating Temperature Range | -55 to 150 | -55 to 175 | °C (TJ) |
| Mounting Type | Chassis Mount | Chassis Mount | — |
| Package / Case | SOT-227-4, miniBLOC | SOT-227-4, miniBLOC | — |
| Series | HiPerFET™ | HiPerFET™, Polar | — |
| Product Status | Obsolete | Active | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | — |
| REACH Status | REACH Unaffected | REACH Unaffected | — |
| ECCN | EAR99 | EAR99 | — |
Engineering Selection Recommendations
IXFN180N15P as Primary Substitute:
The IXFN180N15P is the direct equivalent substitute for the IXFN150N15. Both devices share identical voltage and current ratings, package configuration, and thermal mounting specifications. The IXFN180N15P provides measurable performance improvements:
- On-state resistance reduced from 12.5 mOhm to 11 mOhm, resulting in lower conduction losses
- Gate charge reduced from 360 nC to 240 nC, enabling faster switching transitions
- Power dissipation capability increased from 600W to 680W, providing additional thermal headroom
- Operating temperature range extended to 175°C, supporting higher ambient conditions
The IXFN180N15P holds Active product status, ensuring continued availability and manufacturing support. Both devices maintain identical compliance certifications (REACH Unaffected, EAR99) and moisture sensitivity ratings (MSL 1). The substitute is packaged in tube format and maintains the same SOT-227B chassis mount configuration, ensuring mechanical and thermal compatibility in existing designs.
Frequently Asked Questions (FAQ)
Q: Can the IXFN180N15P directly replace the IXFN150N15 in existing circuit designs?
A: Yes. Both devices are rated for 150V drain-to-source voltage and 150A continuous drain current. They share identical package geometry (SOT-227B, miniBLOC) and mounting configuration (chassis mount). The electrical interface, including gate drive voltage and maximum gate voltage specifications, is identical. No circuit modifications are required.
Q: What are the performance advantages of the IXFN180N15P over the IXFN150N15?
A: The IXFN180N15P delivers three measurable improvements: lower on-state resistance (11 mOhm versus 12.5 mOhm), reduced gate charge (240 nC versus 360 nC), and higher power dissipation rating (680W versus 600W). These characteristics result in reduced conduction losses, faster switching performance, and improved thermal margin.
Q: Are there packaging differences between these devices?
A: Both devices use the SOT-227B package with miniBLOC configuration and chassis mount mounting type. The IXFN150N15 is supplied in standard packaging, while the IXFN180N15P is supplied in tube format. This difference affects only procurement and handling; the physical package dimensions and thermal interface remain identical.
Q: Why is the IXFN150N15 classified as obsolete?
A: The IXFN150N15 is no longer in active production. The IXFN180N15P, which maintains equivalent electrical specifications while offering performance improvements, has superseded it in the IXYS product line.
Q: Are compliance certifications identical between these devices?
A: Yes. Both the IXFN150N15 and IXFN180N15P carry identical REACH status (REACH Unaffected), ECCN classification (EAR99), and moisture sensitivity level (MSL 1, Unlimited). Both devices are suitable for applications with identical regulatory requirements.
Q: What is the temperature operating range difference?
A: The IXFN150N15 operates from -55°C to 150°C junction temperature. The IXFN180N15P extends the upper limit to 175°C, providing 25°C additional thermal margin. This extended range supports applications in higher ambient temperature environments without circuit redesign.
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