IXFN150N10 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IXFN150N10 is an N-Channel MOSFET manufactured by IXYS, rated for 100V drain-to-source voltage with 150A continuous drain current at 25°C. The device is housed in a SOT-227B chassis mount package and is part of the HiPerFET™ series. This part carries a Last Time Buy product status, indicating discontinued production. Identification of equivalent and substitute parts is necessary to ensure design continuity and procurement availability for applications requiring comparable electrical and mechanical characteristics.

Substiute Parts

IXFN150N10

IXYSIn Stock: 1045IXFN150N10 Datasheet

Current PartRFQ

IXFN200N10P

IXYSIn Stock: 1276IXFN200N10P Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFN150N10 is determined by electrical and mechanical compatibility within the following parameter constraints:

Electrical Compatibility Criteria:

• Drain-to-Source Voltage (Vdss) must equal or exceed 100V
• Continuous Drain Current (Id) must meet or exceed 150A at 25°C
• On-State Resistance (Rds On) must not exceed the maximum specified value to ensure thermal performance
• Gate Threshold Voltage (Vgs(th)) must remain within acceptable switching characteristics
• Operating Temperature Range must support the application's thermal requirements
• Gate Drive Voltage compatibility at 10V

Mechanical Compatibility Criteria:

• Package Type: SOT-227-4, miniBLOC chassis mount configuration
• Mounting interface must be identical to ensure direct board-level replacement

The IXFN200N10P qualifies as a substitute part based on these criteria. It maintains identical Vdss (100V), exceeds the continuous drain current requirement (200A vs. 150A), operates within compatible gate drive parameters, and utilizes the same SOT-227B package configuration.

Parameter Comparison

Engineering Selection Recommendations

IXFN150N10 (Original Part): The IXFN150N10 is designated Last Time Buy, indicating end-of-life status with no further production planned. This part carries RoHS non-compliant certification. Selection of this part is appropriate only for legacy system maintenance or applications where existing inventory is available and regulatory compliance is not a requirement.

IXFN200N10P (Substitute Part): The IXFN200N10P is the recommended substitute for new designs and procurement. This part is Active in product status, ensuring long-term availability. It is RoHS3 Compliant, meeting current regulatory requirements for electronic components. The IXFN200N10P provides superior electrical performance with higher continuous drain current (200A vs. 150A), lower on-state resistance (7.5 mOhm vs. 12 mOhm), reduced gate charge (235 nC vs. 360 nC), and extended operating temperature range (-55°C to 175°C vs. -55°C to 150°C). Both parts share identical package configuration (SOT-227B) and drain-to-source voltage rating (100V), enabling direct mechanical and electrical substitution.

Selection of the IXFN200N10P eliminates obsolescence risk, ensures regulatory compliance, and provides enhanced thermal and switching performance within the same form factor.

Frequently Asked Questions (FAQ)

Q: Can the IXFN200N10P directly replace the IXFN150N10 in existing designs?

A: Yes. Both devices utilize the SOT-227B chassis mount package with identical pinout and mechanical interface. The IXFN200N10P maintains the same 100V drain-to-source voltage rating and 10V gate drive voltage, ensuring electrical compatibility. The higher current rating (200A vs. 150A) and improved on-state resistance provide enhanced performance without requiring circuit modifications.

Q: What are the key electrical differences between these parts?

A: The IXFN200N10P provides higher continuous drain current (200A vs. 150A), lower on-state resistance (7.5 mOhm vs. 12 mOhm at different measurement points), reduced gate charge (235 nC vs. 360 nC), and lower input capacitance (7600 pF vs. 9000 pF). These improvements result in reduced switching losses and improved thermal performance. The IXFN200N10P also supports a higher maximum operating temperature (175°C vs. 150°C).

Q: Are there packaging or mounting differences?

A: No. Both the IXFN150N10 and IXFN200N10P use the SOT-227-4 miniBLOC package with chassis mount configuration. The mechanical footprint, mounting interface, and thermal characteristics are identical, enabling direct board-level substitution without layout modifications.

Q: Why is the IXFN150N10 designated Last Time Buy?

A: Last Time Buy status indicates that IXYS has discontinued production of the IXFN150N10. This designation allows customers a final opportunity to purchase remaining inventory before the part becomes unavailable. The IXFN200N10P is the active replacement offering superior performance and regulatory compliance.

Q: Does the IXFN200N10P meet current regulatory requirements?

A: Yes. The IXFN200N10P is RoHS3 Compliant and REACH Unaffected, meeting current environmental and regulatory standards for electronic components. The IXFN150N10 is RoHS non-compliant and may not be suitable for applications subject to RoHS regulations.

Q: What is the impact of lower gate charge on circuit performance?

A: The IXFN200N10P requires less gate charge (235 nC vs. 360 nC) to reach full conduction. This reduces gate drive power requirements, enables faster switching transitions, and decreases switching losses in the gate driver circuit. Lower gate charge also reduces electromagnetic interference and improves overall system efficiency.

Q: Are there thermal performance differences?

A: Yes. The IXFN200N10P has higher maximum power dissipation (680W vs. 520W) and supports higher junction temperatures (175°C vs. 150°C). Combined with lower on-state resistance, the IXFN200N10P dissipates less heat during operation, improving thermal margin and reliability in high-current applications.