IXFN100N25 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IXFN100N25 is an N-Channel MOSFET manufactured by IXYS, part of the HiPerFET™ series. This device is rated for 250V drain-to-source voltage with 100A continuous drain current and 600W maximum power dissipation in a chassis-mount SOT-227B package. The IXFN100N25 is classified as obsolete, making identification of active equivalent parts essential for ongoing design support and procurement continuity.

Substiute Parts

IXFN100N25

IXYSIn Stock: 1201IXFN100N25 Datasheet

Current PartRFQ

IXFN140N30P

IXYSIn Stock: 68652IXFN140N30P Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFN100N25 is determined by compatibility across the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

• FET Type: N-Channel topology must be maintained
• Drain-to-Source Voltage (Vdss): Substitute must equal or exceed 250V
• Continuous Drain Current (Id): Substitute must equal or exceed 100A at 25°C
• On-State Resistance (Rds On): Substitute performance must be acceptable for the application thermal and switching requirements
• Operating Temperature Range: Must support -55°C to 150°C (TJ)
• Gate Drive Voltage: Must be compatible with 10V drive specification

Mechanical Compatibility Criteria:

• Mounting Type: Chassis Mount required
• Package: SOT-227B (miniBLOC) form factor required for physical fit

The IXFN140N30P qualifies as a direct substitute based on these parameters. It maintains N-Channel topology, exceeds voltage and current ratings, operates within the required temperature range, and uses identical packaging.

Parameter Comparison

Engineering Selection Recommendations

IXFN140N30P as Primary Substitute:

The IXFN140N30P is the qualified substitute for the obsolete IXFN100N25. Selection is based on the following factors:

Product Status: The IXFN140N30P carries Active product status, ensuring long-term availability and manufacturing support. The IXFN100N25 is classified as Obsolete, creating supply chain risk and limiting procurement options.

Electrical Performance: The IXFN140N30P exceeds all critical electrical specifications of the IXFN100N25. Drain-to-source voltage increases from 250V to 300V, providing additional voltage margin. Continuous drain current increases from 100A to 110A. On-state resistance improves from 27mOhm to 24mOhm, reducing conduction losses. Power dissipation capability increases from 600W to 700W.

Regulatory Compliance: Both devices maintain identical REACH status (REACH Unaffected), ECCN classification (EAR99), and HTSUS codes (8541.29.0095). The IXFN140N30P carries RoHS3 compliance certification, meeting modern environmental standards. Moisture sensitivity level remains at MSL 1 (Unlimited) for both parts.

Thermal and Mechanical Compatibility: Operating temperature range is identical (-55°C to 150°C TJ). Both devices use identical SOT-227B (miniBLOC) chassis-mount packaging, ensuring direct mechanical fit without board redesign.

Gate Drive Compatibility: Both devices operate with 10V gate drive voltage and ±20V maximum gate-source voltage, maintaining compatibility with existing driver circuits.

Frequently Asked Questions (FAQ)

Q: Can the IXFN140N30P directly replace the IXFN100N25 without circuit modification?

A: Yes. Both devices use identical SOT-227B packaging and mounting type. Gate drive voltage specifications (10V) and maximum gate-source voltage (±20V) are identical. The IXFN140N30P exceeds all electrical ratings of the IXFN100N25, making it a direct electrical and mechanical substitute.

Q: What are the key differences between these two MOSFETs?

A: The IXFN140N30P provides higher voltage rating (300V vs. 250V), higher current rating (110A vs. 100A), lower on-state resistance (24mOhm vs. 27mOhm), and higher power dissipation capability (700W vs. 600W). Gate charge is lower in the IXFN140N30P (185nC vs. 300nC), resulting in faster switching. Input capacitance is higher (14800pF vs. 9100pF).

Q: Why is the IXFN100N25 listed as Obsolete?

A: Product obsolescence is determined by the manufacturer. The IXFN100N25 has been superseded by newer designs in the HiPerFET™ series, including the IXFN140N30P. Obsolete status indicates the manufacturer no longer actively produces or supports this device.

Q: Are there any thermal considerations when substituting these parts?

A: The IXFN140N30P has lower on-state resistance (24mOhm vs. 27mOhm), which reduces conduction losses and heat generation. Both devices operate across the same temperature range (-55°C to 150°C TJ). The higher power dissipation rating of the IXFN140N30P (700W vs. 600W) provides additional thermal margin.

Q: Is the SOT-227B package identical for both devices?

A: Yes. Both the IXFN100N25 and IXFN140N30P use the SOT-227-4 miniBLOC package with chassis-mount configuration. No board layout modifications are required for physical substitution.

Q: What is the gate charge difference, and does it affect circuit design?

A: The IXFN140N30P has lower gate charge (185nC vs. 300nC) at 10V gate drive. Lower gate charge results in faster switching transitions and reduced driver power requirements. Existing gate driver circuits designed for the IXFN100N25 will operate efficiently with the IXFN140N30P.

Q: Are both devices REACH compliant?

A: Both devices carry REACH Unaffected status. The IXFN140N30P additionally carries RoHS3 compliance certification, meeting current environmental and regulatory requirements for electronic components.