IXFN100N20 Equivalent & Substitute Parts

Part Overview

The IXFN100N20 is an N-Channel MOSFET rated for 200V drain-to-source voltage with 100A continuous drain current at 25°C. This device is housed in a SOT-227B chassis mount package and is part of the IXYS HiPerFET™ series. The part is designated as Last Time Buy, indicating that the original manufacturer has discontinued or will discontinue production. Identifying equivalent and substitute parts is necessary to ensure design continuity and maintain supply chain reliability for applications requiring this performance class.

Substiute Parts

IXFN100N20
IXYSIn Stock: 2881IXFN100N20 Datasheet
IXFN100N20
Current Part
IXFN140N20P
IXYSIn Stock: 68887IXFN140N20P Datasheet
IXFN140N20P
Similar

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 200 V
Continuous Drain Current (Id) @ 25°C 100 A (Tc)
On-State Resistance (Rds On Max) @ 10V 23 mOhm
Gate Threshold Voltage (Vgs(th) Max) 4 V @ 8mA
Power Dissipation (Max) 520 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Package Type SOT-227B (miniBLOC) Chassis Mount
Gate Charge (Qg Max) @ 10V 380 nC
Input Capacitance (Ciss Max) @ 25V 9000 pF

Substitute Part Grouping Explanation

Substitution of the IXFN100N20 is determined by electrical and mechanical compatibility within the following critical parameters:

Voltage Rating Compatibility: The substitute part must maintain the same 200V Vdss rating to ensure safe operation in the target circuit without exceeding voltage stress limits.

Package and Mounting: The substitute must use the identical SOT-227B chassis mount package to ensure mechanical fit and thermal interface compatibility with existing PCB layouts and heatsink assemblies.

Current and Power Handling: While the substitute may exceed the original part's current rating and power dissipation capability, it must not fall below the minimum requirements of the application circuit.

Gate Drive Characteristics: The substitute must operate within compatible gate voltage ranges (Vgs Max ±20V) and threshold voltage specifications to ensure proper switching behavior with existing gate drive circuitry.

Temperature Range: The substitute must support the operating temperature range of the application, with the original part specified to -55°C to 150°C.

Compliance and Status: The substitute must maintain RoHS3 compliance and REACH unaffected status to satisfy regulatory and supply chain requirements.

Parameter Comparison

Parameter IXFN100N20 IXFN140N20P Unit
Manufacturer IXYS IXYS
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 200 V
Continuous Drain Current (Id) @ 25°C 100 115 A (Tc)
Rds On (Max) @ 10V 23 18 mOhm
Gate Threshold Voltage (Vgs(th) Max) 4 5 V @ specified Id
Gate Charge (Qg Max) @ 10V 380 240 nC
Vgs (Max) ±20 ±20 V
Input Capacitance (Ciss Max) @ 25V 9000 7500 pF
Power Dissipation (Max) 520 680 W (Tc)
Operating Temperature Range -55 to 150 -55 to 175 °C (TJ)
Mounting Type Chassis Mount Chassis Mount
Package / Case SOT-227-4, miniBLOC SOT-227-4, miniBLOC
Series HiPerFET™ HiPerFET™, Polar
RoHS Status ROHS3 Compliant ROHS3 Compliant
REACH Status REACH Unaffected REACH Unaffected
Product Status Last Time Buy Active

Engineering Selection Recommendations

IXFN140N20P as Direct Substitute

The IXFN140N20P is a direct substitute for the IXFN100N20 based on the following engineering criteria:

Electrical Compatibility: Both devices share identical 200V Vdss ratings and SOT-227B package specifications. The IXFN140N20P provides higher continuous drain current (115A versus 100A) and superior on-state resistance (18 mOhm versus 23 mOhm at 10V), resulting in lower conduction losses and improved thermal performance.

Mechanical Compatibility: Both parts use the SOT-227-4 miniBLOC chassis mount package, ensuring direct mechanical and thermal interface compatibility with existing heatsink and PCB layouts.

Regulatory Compliance: The IXFN140N20P maintains ROHS3 compliance and REACH unaffected status, satisfying the same regulatory requirements as the original part.

Supply Chain Status: The IXFN140N20P is designated as Active product status with significantly higher inventory availability (68,856 pieces in stock versus 2,800 pieces for the IXFN100N20), ensuring long-term supply reliability.

Enhanced Performance Characteristics: The substitute offers improved gate charge characteristics (240 nC versus 380 nC at 10V) and lower input capacitance (7,500 pF versus 9,000 pF at 25V), enabling faster switching transitions and reduced gate drive power requirements. The extended operating temperature range (-55°C to 175°C versus -55°C to 150°C) provides additional thermal margin for high-temperature applications.

Frequently Asked Questions (FAQ)

Q: Can the IXFN140N20P directly replace the IXFN100N20 in existing designs?

A: Yes. Both devices share identical voltage ratings (200V Vdss), gate voltage specifications (±20V Vgs Max), and package geometry (SOT-227B miniBLOC). The IXFN140N20P provides equal or superior electrical performance across all critical parameters. No circuit modifications are required.

Q: What are the key differences between these two parts?

A: The IXFN140N20P offers higher continuous drain current (115A versus 100A), lower on-state resistance (18 mOhm versus 23 mOhm), reduced gate charge (240 nC versus 380 nC), and extended maximum operating temperature (175°C versus 150°C). These improvements result in lower power dissipation and faster switching characteristics.

Q: Are there any thermal considerations when substituting the IXFN140N20P?

A: The IXFN140N20P has a higher maximum power dissipation rating (680W versus 520W), indicating superior thermal capability. The lower on-state resistance reduces conduction losses, which typically decreases junction temperature in switching applications. Existing heatsink designs will accommodate this part without modification.

Q: Do both parts require the same gate drive voltage?

A: Yes. Both the IXFN100N20 and IXFN140N20P operate with maximum gate voltages of ±20V and are compatible with standard gate drive circuits. The IXFN140N20P has a slightly higher gate threshold voltage (5V versus 4V), which does not affect compatibility with typical 10V or 15V gate drive supplies.

Q: What is the significance of the Last Time Buy status for the IXFN100N20?

A: Last Time Buy status indicates that IXYS has discontinued or will discontinue production of the IXFN100N20. Existing inventory is limited (2,800 pieces). The IXFN140N20P, designated as Active product status with 68,856 pieces in stock, ensures continued availability and supply chain reliability for new designs and production runs.

Q: Are both parts RoHS and REACH compliant?

A: Yes. Both the IXFN100N20 and IXFN140N20P are ROHS3 compliant and REACH unaffected, satisfying regulatory requirements for electronic component procurement and use in regulated markets.

Q: Can the IXFN140N20P be used in applications requiring the exact current rating of 100A?

A: Yes. The IXFN140N20P is rated for 115A continuous drain current, which exceeds the 100A requirement. The device will operate safely at 100A with lower junction temperature and improved reliability margins compared to the original part.

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