IXFN100N10S3 Equivalent & Substitute Parts

Part Overview

The IXFN100N10S3 is an N-Channel MOSFET manufactured by IXYS, rated for 100V drain-to-source voltage and 100A continuous drain current at 25°C. This device is housed in a SOT-227B chassis mount package and is part of the HiPerFET™ series. The part is currently classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and procurement planning.

Substiute Parts

IXFN100N10S3

IXYSIn Stock: 1161IXFN100N10S3 Datasheet

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APT10M11JVRU3

Microchip TechnologyIn Stock: 928APT10M11JVRU3 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFN100N10S3 is determined by strict equivalence across the following critical parameters:

Mandatory Matching Parameters:

• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 100V
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC

Performance Compatibility Parameters:

• Current - Continuous Drain (Id) @ 25°C: Equal to or greater than 100A
• Drive Voltage (Max Rds On): 10V
• Operating Temperature Range: Must encompass or exceed -40°C to 150°C

The APT10M11JVRU3 manufactured by Microchip Technology meets all mandatory matching parameters and exceeds performance specifications in continuous drain current (142A vs. 100A) and power dissipation (450W vs. 360W). Both devices share identical voltage ratings, mounting configuration, and package designation.

Parameter Comparison

Engineering Selection Recommendations

The APT10M11JVRU3 is a direct functional substitute for the obsolete IXFN100N10S3. Both devices are classified as REACH Unaffected and carry EAR99 ECCN designation. The APT10M11JVRU3 maintains active product status with Microchip Technology, ensuring continued availability and technical support.

The substitute part provides superior electrical performance across multiple parameters: 42% higher continuous drain current (142A vs. 100A), 25% higher power dissipation capability (450W vs. 360W), lower on-resistance at rated conditions (11mOhm vs. 15mOhm), and extended lower operating temperature limit (-55°C vs. -40°C). The APT10M11JVRU3 is RoHS3 compliant, whereas compliance status for the IXFN100N10S3 is not specified in the provided data.

Both devices share identical voltage ratings (100V Vdss), drive voltage requirements (10V), and physical package configuration (SOT-227-4, miniBLOC chassis mount). Gate charge and input capacitance differ between the parts, reflecting the performance enhancements of the substitute device.

Frequently Asked Questions (FAQ)

Q: Can the APT10M11JVRU3 directly replace the IXFN100N10S3 in existing designs?

A: Yes. Both devices are N-Channel MOSFETs with identical 100V Vdss ratings, 10V drive voltage requirements, and SOT-227-4 miniBLOC chassis mount packages. Pinout and mounting configuration are equivalent. The substitute part exceeds the original specifications in continuous drain current and power dissipation.

Q: What are the key differences between these two parts?

A: The APT10M11JVRU3 provides higher continuous drain current (142A vs. 100A), higher power dissipation (450W vs. 360W), lower on-resistance (11mOhm vs. 15mOhm), extended lower operating temperature (-55°C vs. -40°C), and higher gate voltage rating (±30V vs. ±20V). The substitute is an active product with RoHS3 compliance.

Q: Are there any package or mounting differences?

A: No. Both parts use the SOT-227-4 miniBLOC package with chassis mount configuration. Physical dimensions and thermal interface requirements are identical.

Q: Why is the IXFN100N10S3 listed as obsolete?

A: The IXFN100N10S3 is classified as obsolete by IXYS. The APT10M11JVRU3 is an active product from Microchip Technology and is recommended for new designs and ongoing procurement.

Q: What compliance certifications apply to both parts?

A: Both devices are REACH Unaffected and carry EAR99 ECCN designation. The APT10M11JVRU3 is additionally RoHS3 compliant. Both have Moisture Sensitivity Level 1 (Unlimited).

Q: Are there any gate charge or input capacitance considerations for substitution?

A: Gate charge differs between the parts (180nC vs. 300nC @ 10V) and input capacitance differs (4500pF vs. 8600pF @ 25V). These parameters should be evaluated in the context of the specific gate drive circuit design to ensure compatibility with existing driver circuits.