IXFN100N10S2 Equivalent & Substitute Parts

Part Overview

The IXFN100N10S2 is an N-Channel MOSFET manufactured by IXYS, rated for 100V drain-to-source voltage and 100A continuous drain current at 25°C. This device is part of the HiPerFET™ series and features a SOT-227B chassis mount package with a maximum power dissipation of 360W. The part is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and procurement planning.

Substiute Parts

IXFN100N10S2

IXYSIn Stock: 956IXFN100N10S2 Datasheet

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IXFN360N10T

IXYSIn Stock: 2153IXFN360N10T Datasheet

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APT10M11JVRU2

Microchip TechnologyIn Stock: 1184APT10M11JVRU2 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFN100N10S2 is determined by the following critical parameters: drain-to-source voltage rating (Vdss), continuous drain current capability (Id), on-state resistance (Rds On), package type (SOT-227B), and mounting configuration (Chassis Mount). All substitute parts must maintain electrical compatibility within the same voltage class (100V) and support equivalent or higher current ratings to ensure functional interchangeability in the target application.

The identified substitute parts meet these criteria:

IXFN360N10T (IXYS): Maintains 100V Vdss rating with significantly higher current capability (360A) and lower on-state resistance (2.6mOhm), housed in the same SOT-227B package with chassis mount configuration.

APT10M11JVRU2 (Microchip Technology): Maintains 100V Vdss rating with comparable current capability (142A) and similar on-state resistance (11mOhm), housed in SOT-227 package with chassis mount configuration.

Parameter Comparison

Engineering Selection Recommendations

IXFN360N10T is the primary substitute for applications requiring direct performance enhancement. This part maintains identical voltage rating and package configuration while providing superior current handling (360A versus 100A) and significantly reduced on-state resistance (2.6mOhm versus 15mOhm). The IXFN360N10T is an active product with ROHS3 compliance and extended operating temperature range (-55°C to 175°C), making it suitable for demanding thermal environments. The higher gate charge (505nC) and input capacitance (36000pF) require gate driver circuit evaluation for switching frequency compatibility.

APT10M11JVRU2 serves as an alternative substitute for applications with moderate current requirements. This Microchip Technology device provides 142A continuous drain current with 11mOhm on-state resistance, representing a closer performance match to the original IXFN100N10S2 specifications. The APT10M11JVRU2 is an active product with ROHS3 compliance and maintains the same operating temperature upper limit (150°C). The lower gate charge (300nC) and input capacitance (8600pF) compared to the IXFN360N10T may offer advantages in gate driver circuit design and switching efficiency.

Both substitute parts are active products with current manufacturing support and regulatory compliance certifications, eliminating obsolescence risk associated with the original IXFN100N10S2.

Frequently Asked Questions (FAQ)

Q: Can the IXFN360N10T directly replace the IXFN100N10S2 in existing designs?

A: The IXFN360N10T maintains identical voltage rating (100V) and package configuration (SOT-227B), enabling direct mechanical and electrical substitution. However, the significantly higher gate charge (505nC versus 180nC) and input capacitance (36000pF versus 4500pF) require verification that the gate driver circuit can supply adequate current for the switching frequency of the application.

Q: What are the key differences between the IXFN360N10T and APT10M11JVRU2?

A: Both parts maintain 100V Vdss rating and chassis mount configuration. The IXFN360N10T offers superior current capability (360A versus 142A) and lower on-state resistance (2.6mOhm versus 11mOhm), but requires higher gate drive capability due to increased gate charge (505nC versus 300nC). The APT10M11JVRU2 provides a closer performance match to the original IXFN100N10S2 with lower gate charge requirements.

Q: Are there package compatibility considerations between SOT-227B and SOT-227?

A: Both SOT-227B and SOT-227 are miniBLOC chassis mount packages with identical pin configurations and thermal characteristics. These packages are mechanically and electrically interchangeable for PCB layout purposes.

Q: What compliance certifications apply to the substitute parts?

A: Both IXFN360N10T and APT10M11JVRU2 are ROHS3 compliant and REACH unaffected. Both parts carry ECCN classification EAR99 and HTSUS code 8541.29.0095, matching the regulatory profile of the original IXFN100N10S2.

Q: How do the operating temperature ranges compare?

A: The IXFN100N10S2 operates from -40°C to 150°C. The IXFN360N10T extends this range to -55°C to 175°C, providing enhanced low-temperature and high-temperature performance. The APT10M11JVRU2 operates from -55°C to 150°C, offering improved low-temperature capability while maintaining the same upper temperature limit as the original part.

Q: What is the moisture sensitivity level for these parts?

A: All three parts (IXFN100N10S2, IXFN360N10T, and APT10M11JVRU2) carry MSL rating of 1 (Unlimited), indicating no moisture sensitivity restrictions for storage and handling.