IXFN100N10S1 Equivalent & Substitute Parts

Part Overview

The IXFN100N10S1 is an N-Channel MOSFET manufactured by IXYS, rated for 100V drain-to-source voltage and 100A continuous drain current at 25°C. This device is housed in a SOT-227B chassis mount package and is part of the HiPerFET™ series. The part is currently classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support and procurement planning.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	100	A (Tc)
Rds On (Max) @ Id, Vgs	15	mOhm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs	180	nC @ 10V
Power Dissipation (Max)	360	W (Tc)
Operating Temperature Range	-40 to 150	°C (TJ)
Package Type	SOT-227B	Chassis Mount
Vgs (Max)	±20	V

Substitute Part Grouping Explanation

Substitution of the IXFN100N10S1 is determined by the following critical parameters: drain-to-source voltage rating (Vdss), continuous drain current capability (Id), on-state resistance (Rds On), power dissipation rating, package compatibility, and operating temperature range. All substitute parts must maintain the 100V Vdss rating and SOT-227B chassis mount package configuration. Substitute parts are grouped based on whether they meet or exceed the electrical performance of the original device while maintaining mechanical and thermal compatibility.

The IXFN360N10T provides higher current and power handling capability within the same voltage class and package. The APT10M11JVRU2 offers comparable current handling with slightly lower on-state resistance characteristics, also within the same package family.

Parameter Comparison

Parameter	IXFN100N10S1	IXFN360N10T	APT10M11JVRU2	Unit
Manufacturer	IXYS	IXYS	Microchip Technology	—
Drain to Source Voltage (Vdss)	100	100	100	V
Continuous Drain Current (Id) @ 25°C	100	360	142	A (Tc)
Rds On (Max) @ Id, Vgs	15 @ 500mA, 10V	2.6 @ 180A, 10V	11 @ 71A, 10V	mOhm
Gate Charge (Qg) (Max) @ Vgs	180 @ 10V	505 @ 10V	300 @ 10V	nC
Power Dissipation (Max)	360	830	450	W (Tc)
Operating Temperature Range	-40 to 150	-55 to 175	-55 to 150	°C (TJ)
Package Type	SOT-227B	SOT-227B	SOT-227	—
Vgs (Max)	±20	±20	±30	V
Product Status	Obsolete	Active	Active	—

Engineering Selection Recommendations

The IXFN100N10S1 is classified as obsolete. For new designs or ongoing production requiring this component, the IXFN360N10T is the primary substitute from IXYS. This part maintains identical voltage and package specifications while providing superior current handling (360A versus 100A) and power dissipation capability (830W versus 360W). The IXFN360N10T is active and ROHS3 compliant, ensuring long-term availability and regulatory compliance.

The APT10M11JVRU2 from Microchip Technology is an alternative substitute offering 142A continuous drain current and 450W power dissipation. This part is also active and ROHS3 compliant. The APT10M11JVRU2 provides a mid-range performance option between the original IXFN100N10S1 and the higher-performance IXFN360N10T.

Both substitute parts are rated for extended operating temperature ranges (-55°C to 175°C for IXFN360N10T; -55°C to 150°C for APT10M11JVRU2) compared to the original device (-40°C to 150°C), providing additional thermal margin in demanding applications.

Frequently Asked Questions (FAQ)

Q: Can the IXFN360N10T directly replace the IXFN100N10S1 in existing designs?

A: The IXFN360N10T maintains the same 100V Vdss rating and SOT-227B package configuration as the IXFN100N10S1. Pin compatibility and thermal interface requirements are identical. The higher current and power ratings of the IXFN360N10T do not create incompatibility; however, circuit design verification is necessary to confirm that the lower on-state resistance (2.6 mOhm versus 15 mOhm) does not introduce unintended operational changes.

Q: What is the difference between SOT-227B and SOT-227 packages?

A: Both packages are chassis mount configurations in the miniBLOC family. The IXFN100N10S1 and IXFN360N10T use SOT-227B, while the APT10M11JVRU2 uses SOT-227. These designations reflect minor variations in package geometry and thermal characteristics. Mechanical compatibility must be verified against specific PCB footprint and thermal management requirements.

Q: Why does the IXFN360N10T have higher gate charge than the IXFN100N10S1?

A: Gate charge (Qg) increases with die size and current capability. The IXFN360N10T is rated for 360A continuous current compared to 100A for the IXFN100N10S1, resulting in a larger silicon die and higher gate charge (505 nC versus 180 nC). This affects gate drive circuit design and switching speed characteristics.

Q: Are all substitute parts REACH compliant?

A: All three parts—IXFN100N10S1, IXFN360N10T, and APT10M11JVRU2—are listed as REACH Unaffected, indicating compliance with REACH regulations.

Q: What is the moisture sensitivity level for these components?

A: All three parts carry Moisture Sensitivity Level (MSL) 1, indicating unlimited shelf life without moisture control requirements.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message